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SIS334DN PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 SIS334DN
기능 N-Channel 30V (D-S) MOSFET
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SIS334DN 데이터시트, 핀배열, 회로
N-Channel 30 V (D-S) MOSFET
SiS334DN
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
30
RDS(on) () Max.
0.0113 at VGS = 10 V
0.0146 at VGS = 4.5 V
ID (A)a
20
20
PowerPAK® 1212-8
Qg (Typ.)
5.1 nC
3.30 mm
D
8D
7
D
6
D
5
S
1S
3.30 mm
2
S
3
G
4
Bottom View
Ordering Information:
SiS334DN-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES
Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• 100 % Rg and UIS Tested
Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Notebook/POL
- Synchronous Buck
- High Side
D
G
N-Channel MOSFET
S
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC = 25 °C
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C
TA = 25 °C
ID
TA = 70 °C
Pulsed Drain Current (t = 300 µs)
IDM
Avalanche Current
Avalanche Energy
L = 0.1 mH
IAS
EAS
Continuous Source-Drain Diode Current
TC = 25 °C
TA = 25 °C
IS
TC = 25 °C
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
PD
TA = 70 °C
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d, e
TJ, Tstg
Limit
30
± 20
20a
20a
13.6b, c
10.8b, c
50
15
11.25
20a
3.4b, c
50
32
3.8b, c
2.4b, c
- 55 to 150
260
Unit
V
A
mJ
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb, f
Maximum Junction-to-Case (Drain)
t 10 s
Steady State
Symbol
RthJA
RthJC
Typical
27
2
Maximum
33
2.5
Unit
°C/W
Notes:
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See solder profile (www.vishay.com/ppg?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 81 °C/W.
Document Number: 63371
www.vishay.com
S11-1659-Rev. A, 15-Aug-11
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000




SIS334DN pdf, 반도체, 판매, 대치품
SiS334DN
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100 0.05
10
TJ = 150 °C
TJ = 25 °C
1
0.04
0.03
ID = 10 A
0.1
0.01
0.001
0.0
0.2 0.4 0.6 0.8 1.0
VSD - Source-to-Drain Voltage (V)
1.2
Source-Drain Diode Forward Voltage
0.02
TJ = 125 °C
0.01
TJ = 25 °C
0.00
0
2468
VGS - Gate-to-Source Voltage (V)
10
On-Resistance vs. Gate-to-Source Voltage
0.4 50
0.2
0
- 0.2
- 0.4
- 0.6
ID = 5 mA
ID = 250 μA
40
30
20
10
- 0.8
- 50 - 25
0 25 50 75 100 125 150
TJ - Temperature (°C)
Threshold Voltage
0
0.01
0.1
1 10
Time (s)
100 1000
Single Pulse Power (Junction-to-Ambient)
100
IDM Limited
10 ID Limited
100 μs
1
Limited by RDS(on)*
1 ms
10 ms
100 ms
0.1 1 s
10 s
TC = 25 °C
Single Pulse
DC
BVDSS Limited
0.01
0.01 0.1 1 10 100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
www.vishay.com
Document Number: 63371
4 S11-1659-Rev. A, 15-Aug-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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SIS334DN 전자부품, 판매, 대치품
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Document Number: 91000
Revision: 11-Mar-11
www.vishay.com
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SIS334DN

N-Channel 30V (D-S) MOSFET

Vishay
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