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SIS376DN PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 SIS376DN
기능 N-Channel 20V (D-S) MOSFET
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SIS376DN 데이터시트, 핀배열, 회로
N-Channel 20 V (D-S) MOSFET
SiS376DN
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) () Max.
0.0058 at VGS = 10 V
20
0.0084 at VGS = 4.5 V
ID (A)a
35
35
Qg (Typ.)
7.7 nC
PowerPAK® 1212-8
3.30 mm
D
8D
7
D
6
D
5
S
1S
3.30 mm
2
S
3G
4
Bottom View
Ordering Information: SiS376DN-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES
Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• 100 % Rg and UIS Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Note book PC
- Synchronous Buck Converters
- High Side
• POL
D
G
N-Channel MOSFET
S
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC = 25 °C
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C
TA = 25 °C
ID
TA = 70 °C
Pulsed Drain Current (t = 300 µs)
IDM
Avalanche Current
Avalanche Energy
L = 0.1 mH
IAS
EAS
Continuous Source-Drain Diode Current
TC = 25 °C
TA = 25 °C
IS
TC = 25 °C
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
PD
TA = 70 °C
Operating Junction and Storage Temperature Range
TJ, Tstg
Soldering Recommendations (Peak Temperature)d, e
Limit
20
± 20
35a
35a
22b, c
17.8b, c
50
25
31
27
3b, c
33
21
3.6b, c
2.3b, c
- 55 to 150
260
Unit
V
A
mJ
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb, f
Maximum Junction-to-Case (Drain)
t 10 s
Steady State
Symbol
RthJA
RthJC
Typical
28
2.9
Maximum
35
3.8
Unit
°C/W
Notes:
a. Package Limited.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection.
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under Steady State conditions is 81 °C/W.
Document Number: 63304
www.vishay.com
S11-1660-Rev. A, 15-Aug-11
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000




SIS376DN pdf, 반도체, 판매, 대치품
SiS376DN
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100 0.030
10
TJ = 150 °C
TJ = 25 °C
1
0.024
0.018
ID = 10 A
0.1
0.01
0.001
0.0
0.2 0.4 0.6 0.8 1.0
VSD - Source-to-Drain Voltage (V)
1.2
Source-Drain Diode Forward Voltage
0.012
TJ = 125 °C
0.006
0.000
0
TJ = 25 °C
2468
VGS - Gate-to-Source Voltage (V)
10
On-Resistance vs. Gate-to-Source Voltage
0.4 100
0.2
0
- 0.2
- 0.4
- 0.6
ID = 5 mA
ID = 250 μA
80
60
40
20
- 0.8
- 50 - 25
0 25 50 75 100 125 150
TJ - Temperature (°C)
Threshold Voltage
0
0.001
0.01 0.1
Time (s)
1
10
Single Pulse Power (Junction-to-Ambient)
100
IDM Limited
10 ID Limited
1 Limited by RDS(on)*
100 μs
1 ms
10 ms
100 ms
0.1
0.01
TC = 25 °C
Single Pulse
0.01 0.1
BVDSS Limited
1s
10 s
DC
1 10 100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
www.vishay.com
Document Number: 63304
4 S11-1660-Rev. A, 15-Aug-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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SIS376DN 전자부품, 판매, 대치품
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Document Number: 91000
Revision: 11-Mar-11
www.vishay.com
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부품번호상세설명 및 기능제조사
SIS376DN

N-Channel 20V (D-S) MOSFET

Vishay
Vishay

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