N-Channel 30 V (D-S) MOSFET
SiS472ADN
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
30
RDS(on) () Max.
0.0085 at VGS = 10 V
0.0105 at VGS = 4.5 V
ID (A)a, g
24
24
Qg (Typ.)
12.8 nC
PowerPAK® 1212-8
FEATURES
• TrenchFET® Power MOSFET
• Optimized for High-Side Synchronous
Rectifier Operation
• 100 % Rg and UIS Tested
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
3.30 mm
S
1S
3.30 mm
2
S
3G
4
D
8D
7
D
6
D
5
Bottom View
Ordering Information: SiS472ADN-T1-GE3 (Lead (Pb)-free and Halogen-free)
APPLICATIONS
• Notebook CPU Core
- High-Side Switch
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current (t = 300 µs)
Continuous Source-Drain Diode Current
Single Pulse Avalanche Current
Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d, e
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
TC = 25 °C
TA = 25 °C
L = 0.1 mH
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
VDS
VGS
ID
IDM
IS
IAS
EAS
PD
TJ, Tstg
Limit
30
± 20
24g
24g
15b, c
12b, c
60
24g
3.2b, c
10
5
28
18
3.5b, c
2.2b, c
- 55 to 150
260
D
G
S
N-Channel MOSFET
Unit
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambientb, f
Maximum Junction-to-Case (Drain)
t 10 s
Steady State
RthJA
RthJC
29
3.6
36
°C/W
4.5
Notes:
a. Base on TC = 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See solder profile (www.vishay.com/doc?73257). The PowerPAK® 1212 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 81 °C/W.
g. Package limited.
Document Number: 62629
For technical questions, contact: pmostechsupport@vishay.com
www.vishay.com
S12-1623-Rev. A, 09-Jul-12
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiS472ADN
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100 0.040
10
0.032
ID = 10 A
1
TJ = 150 °C
0.1
TJ = 25 °C
0.01
0.001
0.0
0.3 0.6 0.9 1.2
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
1.5
0.5
0.024
0.016
TJ = 125 °C
0.008
TJ = 25 °C
0.000
0 2 4 6 8 10
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
120
0.2 96
- 0.1
- 0.4
- 0.7
ID = 5 mA
ID = 250 μA
72
48
24
- 1.0
- 50 - 25
0 25 50 75 100 125 150
TJ - Temperature (°C)
Threshold Voltage
0
0.001
0.01 0.1
Time (s)
1
10
Single Pulse Power, Junction-to-Ambient
100
IDM Limited
10 ID Limited
1 Limited by RDS(on)*
100 μs
1 ms
10 ms
100 ms
1s
0.1 10 s
DC
TA = 25 °C
Single Pulse
BVDSS Limited
0.01
0.01 0.1 1 10 100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
www.vishay.com
For technical questions, contact: pmostechsupport@vishay.com
Document Number: 62629
4 S12-1623-Rev. A, 09-Jul-12
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com
Package Information
Vishay Siliconix
PowerPAK® 1212, (Single/Dual)
W
18
45
Z
2
H E2 K L
E4
1
2
3
4
L1
θθ
A1
2
E1
E
Notes:
1. Inch will govern
2 Dimensions exclusive of mold gate burrs
3. Dimensions exclusive of mold flash and cutting burrs
Detail Z
DIM.
MIN.
A 0.79
A1 0
b 0.23
c 0.13
D 3.00
D1 2.95
D2 1.98
D4
E 3.00
E1 2.95
E2 1.47
E3 1.75
E4
e
K
K1
H 0.15
L 0.15
L1 0.051
θ 0°
W 0.15
M
ECN: C15-0077-Rev. K, 26-Jan-15
DWG: 5882
MILLIMETERS
0.31 TYP.
0.535 TYP.
0.65 BSC
0.61
0.35
0.125 TYP.
MAX.
1.12
0.05
0.41
0.33
3.61
3.21
2.70
3.61
3.21
2.21
1.98
0.51
0.56
0.204
12°
0.36
E3
Backside View of Single Pad
H
H
E2 K
E4
D1
L
1
2
3
D2
4
E3
Backside View of Dual Pad
MIN.
0.031
0
0.009
0.005
0.118
0.116
0.078
0.118
0.116
0.058
0.069
0.006
0.006
0.002
0°
0.006
INCHES
0.012 TYP.
0.021 TYP.
0.026 BSC
0.024
0.014
0.005 TYP.
MAX.
0.044
0.002
0.016
0.013
0.142
0.126
0.106
0.142
0.126
0.087
0.078
0.020
0.022
0.008
12°
0.014
Revison: 26-Jan-15
1 Document Number: 71656
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
