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SIS496EDNT PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 SIS496EDNT
기능 N-Channel 30V (D-S) MOSFET
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SIS496EDNT 데이터시트, 핀배열, 회로
N-Channel 30 V (D-S) MOSFET
SiS496EDNT
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
30
RDS(on) () Max.
0.0048 at VGS = 10 V
0.0062 at VGS = 4.5 V
ID (A)a
50
50
Qg (Typ.)
14 nC
Thin PowerPAK® 1212-8
3.30 mm
S
1S
3.30 mm
2
S
3G
4
D
8
0.75 mm
D
7
D
6
D
5
Bottom View
Ordering Information:
SiS496EDNT-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES
• TrenchFET® Power MOSFET
• 100 % Rg and UIS tested
• Thin 0.75 mm height
• Typical ESD performance 2500 V
Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
DC/DC Converter
• Battery Switch
• Power Management
For Mobile Computing
G
D
N-Channel MOSFET S
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
TC = 25 °C
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C
TA = 25 °C
ID
Pulsed Drain Current (t = 100 µs)
Avalanche Current
Avalanche Energy
Continuous Source-Drain Diode Current
TA = 70 °C
L = 0.1 mH
TC = 25 °C
TA = 25 °C
IDM
IAS
EAS
IS
Maximum Power Dissipation
TC = 25 °C
TC = 70 °C
TA = 25 °C
PD
TA = 70 °C
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d, e
TJ, Tstg
Limit
30
± 20
50a
50a
20.4b, c
16.3b, c
200
25
31
43.3
3.2b, c
52
33
3.8b, c
2b, c
- 55 to 150
260
Unit
V
A
mJ
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb, f
Maximum Junction-to-Case (Drain)
t 10 s
Steady State
Symbol
RthJA
RthJC
Typical
24
1.9
Maximum
33
2.4
Unit
°C/W
Notes:
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See solder profile (www.vishay.com/doc?73257). The Thin PowerPAK 1212-8 is a leadless package. The end of the lead terminal is ex-
posedcopper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guar-
anteed and is not required to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 81 °C/W.
Document Number: 62867
For technical questions, contact: pmostechsupport@vishay.com
www.vishay.com
S13-1945-Rev. B, 16-Sep-13
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000




SIS496EDNT pdf, 반도체, 판매, 대치품
SiS496EDNT
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
10
ID = 20 A
8
6
VDS = 8 V
VDS = 15 V
4
VDS = 24 V
2
2
ID = 20 A
1.65
1.3
0.95
VGS = 10 V
VGS = 4.5 V
0
0
100
5 10 15 20
Qg - Total Gate Charge (nC)
Gate Charge
25
0.6
- 50 - 25 0
25 50 75 100 125 150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
50
10 TJ = 150 °C
40
30
TJ = 25 °C
1
0.1
0.0
0.3 0.6 0.9
VSD - Source-to-Drain Voltage (V)
1.2
Source-Drain Diode Forward Voltage
2
ID = 250 μA
1.75
1.5
1.25
20
10
0
0.01
0.1
1 10
Time (s)
100 600
Single Pulse Power (Junction-to-Ambient)
0.012
ID = 20 A
0.009
0.006
0.003
TJ = 125 °C
TJ = 25 °C
1
- 50 - 25
0 25 50 75 100 125 150
TJ - Temperature (°C)
Threshold Voltage
0.000
0 2 4 6 8 10
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
www.vishay.com
For technical questions, contact: pmostechsupport@vishay.com
Document Number: 62867
4 S13-1945-Rev. B, 16-Sep-13
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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SIS496EDNT 전자부품, 판매, 대치품
www.vishay.com
Package Information
Vishay Siliconix
PowerPAK® 1212-8T
DIM.
MIN.
A 0.70
A1 0.00
b 0.23
c 0.23
D 3.20
D1 2.95
D2 1.98
D3 0.48
D4
D5
E 3.20
E1 2.95
E2 1.47
E3 1.75
E4
e
K
K1 0.35
H 0.30
L 0.30
L1 0.06
W 0.15
M
ECN: T13-0056-Rev. A, 18-Feb-13
DWG: 6012
MILLIMETERS
NOM.
0.75
-
0.30
0.28
3.30
3.05
2.11
-
0.47 TYP.
2.3 TYP.
3.30
3.05
1.60
1.85
0.34 TYP.
0.65 BSC
0.86 TYP.
-
0.41
0.43
0.13
-
0.25
0.125 TYP.
MAX.
0.80
0.05
0.41
0.33
3.40
3.15
2.24
0.89
3.40
3.15
1.73
1.98
-
0.51
0.56
0.20
12°
0.36
MIN.
0.028
0.000
0.009
0.009
0.126
0.116
0.078
0.019
0.126
0.116
0.058
0.069
0.014
0.012
0.012
0.002
0.006
INCHES
NOM.
0.030
-
0.012
0.011
0.130
0.120
0.083
-
0.0185 TYP.
0.090 TYP.
0.130
0.120
0.063
0.073
0.013 TYP.
0.026 BSC
0.034 TYP.
-
0.016
0.017
0.005
-
0.010
0.005 TYP.
MAX.
0.031
0.002
0.016
0.013
0.134
0.124
0.088
0.035
0.134
0.124
0.068
0.078
-
0.020
0.022
0.008
12°
0.014
Revison: 18-Feb-13
1 Document Number: 62836
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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SIS496EDNT

N-Channel 30V (D-S) MOSFET

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