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SIS626DN PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 SIS626DN
기능 N-Channel 25V (D-S) MOSFET
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SIS626DN 데이터시트, 핀배열, 회로
www.vishay.com
SiS626DN
Vishay Siliconix
N-Channel 25 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
25
RDS(on) (Ω) (Max.)
0.0090 at VGS = 10 V
0.0096 at VGS = 4.5 V
0.0115 at VGS = 2.5 V
ID (A) f
16 g
16 g
16 g
Qg (Typ.)
18.2 nC
PowerPAK® 1212-8 Single
D
D8
D7
D6
5
3.3 mm
1
Top View
3.3 mm
1
2S
3S
4S
G
Bottom View
Ordering Information:
SiS626DN-T1-GE3 (lead (Pb)-free and halogen-free)
FEATURES
• TrenchFET® power MOSFET
• 100% Rg and UIS tested
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
• Adaptor switch
• Load switch
• Synchronous buck
- High-side
G
D
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
TC = 25 °C
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C
TA = 25 °C
TA = 70 °C
Pulsed Drain Current (t = 100 μs)
Continuous Source-Drain Diode Current
TC = 25 °C
TA = 25 °C
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
L = 0.1 mH
TC = 25 °C
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
TA = 70 °C
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature) c, d
VDS
VGS
ID
IDM
IS
IAS
EAS
PD
TJ, Tstg
LIMIT
25
± 12
16 g
16 g
15.1 a, b
11.7 a, b
32
16 g
3.1 a, b
20
20
52
33
3.7 a, b
2.4 a, b
-55 to +150
260
UNIT
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
TYPICAL
MAXIMUM
UNIT
Maximum Junction-to-Ambient a, e
Maximum Junction-to-Case (Drain)
t 10 s
Steady State
RthJA
RthJC
28
2
34
°C/W
2.4
Notes
a. Surface mounted on 1" x 1" FR4 board.
b. t = 10 s.
c. See solder profile (www.vishay.com/doc?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection.
d. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
e. Maximum under steady state conditions is 81 °C/W.
f. Based on TC = 25 °C.
g. Package limited.
S15-2185-Rev. A, 14-Sep-15
1
Document Number: 74712
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000




SIS626DN pdf, 반도체, 판매, 대치품
www.vishay.com
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100 0.4
SiS626DN
Vishay Siliconix
10
TJ = 150 °C
1
0.1
TJ = 25 °C
0.2
0
-0.2
ID = 5 mA
0.01
0.001
0.0
0.2 0.4 0.6 0.8 1.0
VSD - Source-to-Drain Voltage (V)
1.2
Source-Drain Diode Forward Voltage
-0.4
-0.6
-50 -25
ID = 250 μA
0 25 50 75 100 125 150
TJ - Temperature (°C)
Threshold Voltage
0.05
0.04
ID = 10 A
150
120
0.03
90
0.02
TJ = 125 °C
0.01
0.00
0
TJ = 25 °C
2468
VGS - Gate-to-Source Voltage (V)
10
On-Resistance vs. Gate-to-Source Voltage
60
30
0
0.001
0.01
0.1
Time (s)
1
10
Single Pulse Power, Junction-to-Ambient
100
IDM Limited
ID Limited
10
1 Limited by RDS(on)*
100 μs
1 ms
10 ms
100 ms
1s
0.1 10 s
0.01
TA = 25 °C
Single Pulse
DC
BVDSS Limited
0.01
0.1
1
10 100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
S15-2185-Rev. A, 14-Sep-15
4
Document Number: 74712
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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SIS626DN 전자부품, 판매, 대치품
www.vishay.com
Package Information
Vishay Siliconix
PowerPAK® 1212, (Single/Dual)
W
18
45
Z
2
H E2 K L
E4
1
2
3
4
L1
θθ
A1
2
E1
E
Notes:
1. Inch will govern
2 Dimensions exclusive of mold gate burrs
3. Dimensions exclusive of mold flash and cutting burrs
Detail Z
DIM.
MIN.
A 0.79
A1 0
b 0.23
c 0.13
D 3.00
D1 2.95
D2 1.98
D4
E 3.00
E1 2.95
E2 1.47
E3 1.75
E4
e
K
K1
H 0.15
L 0.15
L1 0.051
θ
W 0.15
M
ECN: C15-0077-Rev. K, 26-Jan-15
DWG: 5882
MILLIMETERS
0.31 TYP.
0.535 TYP.
0.65 BSC
0.61
0.35
0.125 TYP.
MAX.
1.12
0.05
0.41
0.33
3.61
3.21
2.70
3.61
3.21
2.21
1.98
0.51
0.56
0.204
12°
0.36
E3
Backside View of Single Pad
H
H
E2 K
E4
D1
L
1
2
3
D2
4
E3
Backside View of Dual Pad
MIN.
0.031
0
0.009
0.005
0.118
0.116
0.078
0.118
0.116
0.058
0.069
0.006
0.006
0.002
0.006
INCHES
0.012 TYP.
0.021 TYP.
0.026 BSC
0.024
0.014
0.005 TYP.
MAX.
0.044
0.002
0.016
0.013
0.142
0.126
0.106
0.142
0.126
0.087
0.078
0.020
0.022
0.008
12°
0.014
Revison: 26-Jan-15
1 Document Number: 71656
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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SIS626DN

N-Channel 25V (D-S) MOSFET

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