SIS626DN Datasheet PDF - Vishay
| Part Number | SIS626DN | |
| Description | N-Channel 25V (D-S) MOSFET | |
| Manufacturers | Vishay | |
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www.vishay.com
SiS626DN
Vishay Siliconix
N-Channel 25 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
25
RDS(on) (Ω) (Max.)
0.0090 at VGS = 10 V
0.0096 at VGS = 4.5 V
0.0115 at VGS = 2.5 V
ID (A) f
16 g
16 g
16 g
Qg (Typ.)
18.2 nC
PowerPAK® 1212-8 Single
D
D8
D7
D6
5
3.3 mm
1
Top View
3.3 mm
1
2S
3S
4S
G
Bottom View
Ordering Information:
SiS626DN-T1-GE3 (lead (Pb)-free and halogen-free)
FEATURES
• TrenchFET® power MOSFET
• 100% Rg and UIS tested
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
• Adaptor switch
• Load switch
• Synchronous buck
- High-side
G
D
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
TC = 25 °C
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C
TA = 25 °C
TA = 70 °C
Pulsed Drain Current (t = 100 μs)
Continuous Source-Drain Diode Current
TC = 25 °C
TA = 25 °C
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
L = 0.1 mH
TC = 25 °C
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
TA = 70 °C
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature) c, d
VDS
VGS
ID
IDM
IS
IAS
EAS
PD
TJ, Tstg
LIMIT
25
± 12
16 g
16 g
15.1 a, b
11.7 a, b
32
16 g
3.1 a, b
20
20
52
33
3.7 a, b
2.4 a, b
-55 to +150
260
UNIT
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
TYPICAL
MAXIMUM
UNIT
Maximum Junction-to-Ambient a, e
Maximum Junction-to-Case (Drain)
t ≤ 10 s
Steady State
RthJA
RthJC
28
2
34
°C/W
2.4
Notes
a. Surface mounted on 1" x 1" FR4 board.
b. t = 10 s.
c. See solder profile (www.vishay.com/doc?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection.
d. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
e. Maximum under steady state conditions is 81 °C/W.
f. Based on TC = 25 °C.
g. Package limited.
S15-2185-Rev. A, 14-Sep-15
1
Document Number: 74712
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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www.vishay.com
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
65
SiS626DN
Vishay Siliconix
52
39
26
Package Limited
13
0
0 25 50 75 100 125 150
TC - Case Temperature (°C)
Current Derating a
65 2.0
52 1.6
39 1.2
26 0.8
13 0.4
0
0 25 50 75 100 125 150
TC - Case Temperature (°C)
Power, Junction-to-Case
0.0
0
25 50 75 100 125
TA - Ambient Temperature (°C)
Power, Junction-to-Ambient
150
Note
a. The power dissipation PD is based on TJ (max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit.
S15-2185-Rev. A, 14-Sep-15
5
Document Number: 74712
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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| Information | Total 13 Pages | |
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