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SIS778DN PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 SIS778DN
기능 N-Channel 30V (D-S) MOSFET
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SIS778DN 데이터시트, 핀배열, 회로
SiS778DN
Vishay Siliconix
N-Channel 30 V (D-S) MOSFET with Schottky Diode
PRODUCT SUMMARY
VDS (V)
30
RDS(on) () Max.
0.0050 at VGS = 10 V
0.0062 at VGS = 4.5 V
ID (A)e
35
35
Qg (Typ.)
13.3 nC
PowerPAK 1212-8
3.30 mm
D
8D
7
D
6
D
5
S
1S
3.30 mm
2
S
3G
4
FEATURES
Halogen-free According to IEC 61249-2-21
Definition
• SkyFET Monolithic TrenchFET® Power
MOSFET and Schottky Diode
• 100 % Rg and UIS Tested
• Low Thermal Resistance PowerPAK®
Package with Small Size and Low 1.07 mm Profile
Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Notebook PC
- System and Memory
- Low Side
D
Bottom View
Ordering Information:
SiS778DN-T1-GE3 (Lead (Pb)-free and Halogen-free)
G
N-Channel MOSFET
S
Schottky Diode
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current (t = 300 µs)
Continuous Source-Drain Diode Current
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)c, d
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
TC = 25 °C
TA = 25 °C
L = 0.1 mH
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
VDS
VGS
ID
IDM
IS
IAS
EAS
PD
TJ, Tstg
30
± 20
35e
35e
20.5a, b
16.4a, b
60
35e
5.4a, b
20
20
52
33
3.8a, b
2.4a, b
- 50 to 150
260
V
A
mJ
W
°C
Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. t = 10 s.
c. See solder profile (www.vishay.com/ppg?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
d. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
e. Package limited.
Document Number: 63457
www.vishay.com
S11-1903-Rev. A, 26-Sep-11
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000




SIS778DN pdf, 반도체, 판매, 대치품
SiS778DN
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
80
VGS = 10 V thru 4 V
64
VGS = 3 V
48
10
8
6
32 4
TC = 25 °C
16
0
0.0
VGS = 2 V
0.5 1.0 1.5 2.0
VDS - Drain-to-Source Voltage (V)
Output Characteristics
2.5
2
TC = 125 °C
TC = - 55 °C
0
0.0 0.8 1.6 2.4 3.2 4.0
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
0.0060
2000
0.0055
0.0050
VGS = 4.5 V
1600
1200
Ciss
0.0045
0.0040
VGS = 10 V
0.0035
0
16 32 48 64 80
ID - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
10
ID = 10 A
8
VDS = 15 V
6
VDS = 10 V
4
VDS = 20 V
2
0
0 6 12 18 24 30
Qg - Total Gate Charge (nC)
Gate Charge
800
400
Crss
Coss
0
0 4 8 12 16 20
VDS - Drain-to-Source Voltage (V)
Capacitance
1.8
ID = 10 A
1.6
VGS = 10 V
1.4
VGS = 4.5 V
1.2
1.0
0.8
0.6
- 50 - 25
0
25 50 75 100 125 150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
www.vishay.com
Document Number: 63457
4 S11-1903-Rev. A, 26-Sep-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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SIS778DN 전자부품, 판매, 대치품
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
1
Duty Cycle = 0.5
SiS778DN
Vishay Siliconix
0.1
0.01
0.0001
1
0.2
0.1
0.05
0.02
Single Pulse
Notes:
PDM
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 81 °C/W
3. TJM - TA = PDMZthJA(t)
4. Surface Mounted
0.001
0.01 0.1 1 10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
100
1000
Duty Cycle = 0.5
0.2
0.1
0.05
0.1 0.02
Single Pulse
0.01
0.0001
0.001
0.01 0.1
Square Wave Pulse Duration (s)
1
Normalized Thermal Transient Impedance, Junction-to-Case
10
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?63457.
Document Number: 63457
www.vishay.com
S11-1903-Rev. A, 26-Sep-11
7
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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SIS778DN

N-Channel 30V (D-S) MOSFET

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