Datasheet.kr   

SIS776DN PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 SIS776DN
기능 N-Channel 30V (D-S) MOSFET
제조업체 Vishay
로고 Vishay 로고 


전체 14 페이지

		

No Preview Available !

SIS776DN 데이터시트, 핀배열, 회로
SiS776DN
Vishay Siliconix
N-Channel 30 V (D-S) MOSFET with Schottky Diode
PRODUCT SUMMARY
VDS (V)
30
RDS(on) ()
0.0062 at VGS = 10 V
0.0087 at VGS = 4.5 V
ID (A)e
35
35
Qg (Typ.)
11.6 nC
PowerPAK 1212-8
3.30 mm
D
8D
7
D
6
D
5
S
1S
3.30 mm
2
S
3
G
4
Bottom View
Ordering Information: SiS776DN-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES
Halogen-free According to IEC 61249-2-21
Definition
• SkyFET Monolithic TrenchFET® Power
MOSFET and Schottky Diode
• Low Thermal Resistance PowerPAK®
Package with Small Size and Low 1.07 mm Profile
• 100 % Rg Tested
• 100 % UIS Tested
Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• System Power
- Low Side
D
G
N-Channel MOSFET
S
Schottky Diode
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current
Continuous Source-Drain Diode Current
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)c, d
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
TC = 25 °C
TA = 25 °C
L = 0.1 mH
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
VDS
VGS
ID
IDM
IS
IAS
EAS
PD
TJ, Tstg
30
± 20
35e
35e
18.3a, b
14.5a, b
60
35e
5.4a, b
20
20
52
33
3.8a, b
2.4a, b
- 50 to 150
260
V
A
mJ
W
°C
Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. t = 10 s.
c. See solder profile (www.vishay.com/ppg?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
d. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
e. Package limited.
Document Number: 67012
S10-2251-Rev. A, 04-Oct-10
www.vishay.com
1




SIS776DN pdf, 반도체, 판매, 대치품
SiS776DN
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
80 10
VGS = 10 V thru 4 V
64
8
48 6
32
16
0
0
0.009
0.008
0.007
VGS = 3 V
VGS = 2 V
0.5 1.0 1.5 2.0
VDS - Drain-to-Source Voltage (V)
Output Characteristics
2.5
VGS = 4.5 V
4
2
0
0
1800
1440
TC = 25 °C
TC = 125 °C
12
TC = - 55 °C
34
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
Ciss
1080
5
0.006
0.005
VGS = 10 V
0.004
0
12 24 36 48
ID - Drain Current (A)
On-Resistance vs. Drain Current
10
ID = 10 A
8
VDS = 10 V
6
VDS = 15 V
4
VDS = 20 V
2
60
0
0
www.vishay.com
4
5 10 15 20
Qg - Total Gate Charge (nC)
Gate Charge
25
720
Coss
360
Crss
0
0
5
10 15
VDS - Drain-to-Source Voltage (V)
Capacitance
20
1.8
ID = 10 A
1.6
1.4
1.2
VGS = 10 V
VGS = 4.5 V
1.0
0.8
0.6
- 50 - 25
0
25 50 75 100 125 150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 67012
S10-2251-Rev. A, 04-Oct-10

4페이지










SIS776DN 전자부품, 판매, 대치품
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
1
Duty Cycle = 0.5
SiS776DN
Vishay Siliconix
0.2
0.1
0.1
0.05
0.02
0.01
10-4
10-3
1
Duty Cycle = 0.5
Notes:
PDM
Single Pulse
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 81 °C/W
3. TJM - TA = PDMZthJA(t)
4. Surface Mounted
10-2
10-1
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
100
1000
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10-4
10-3
10-2
10-1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
1
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?67012.
Document Number: 67012
S10-2251-Rev. A, 04-Oct-10
www.vishay.com
7

7페이지



구       성총 14 페이지
다운로드[ SIS776DN.PDF 데이터시트 ]
구매 문의
일반 IC 문의 : 샘플 및 소량 구매
-----------------------------------------------------------------------

전력 반도체 판매 ( IGBT, TR 모듈, SCR, 다이오드 모듈 )

휴대전화 : 010-3582-2743


상호 : 아이지 인터내셔날

전화번호 : 051-319-2877, [ 홈페이지 ]



링크공유

링크 :

관련 데이터시트

부품번호상세설명 및 기능제조사
SIS776DN

N-Channel 30V (D-S) MOSFET

Vishay
Vishay

DataSheet.kr    |   2019   |  연락처   |  링크모음   |   검색  |   사이트맵