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SIS782DN PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 SIS782DN
기능 N-Channel 30V (D-S) MOSFET
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SIS782DN 데이터시트, 핀배열, 회로
SiS782DN
Vishay Siliconix
N-Channel 30 V (D-S) MOSFET with Schottky Diode
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
0.0095 at VGS = 10 V
30
0.0120 at VGS = 4.5 V
ID (A)e
16
16
Qg (Typ.)
9.5 nC
PowerPAK 1212-8
3.30 mm
S
1S
3.30 mm
2
S
3
G
4
D
8D
7
D
6
D
5
Bottom View
Ordering Information:
SiS782DN-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES
Halogen-free According to IEC 61249-2-21
Definition
• SkyFET® Monolithic TrenchFET® Power MOSFET
and Schottky Diode
• Low Thermal Resistance PowerPAK® Package
with Small Size and Low 1.07 mm Profile
• 100 % Rg and UIS Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Notebook PC
- System Power, Memory
• Buck Converter
• Synchronous Rectifier Switch
D
G
N-Channel MOSFET
Schottky Diode
S
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
30
± 20
V
TC = 25 °C
16e
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C
TA = 25 °C
ID
16e
14.5a, b
Pulsed Drain Current (t = 300 µs)
Continuous Source-Drain Diode Current
TA = 70 °C
TC = 25 °C
TA = 25 °C
IDM
IS
11.5a, b
50
16e
4a, b
A
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
L = 0.1 mH
TC = 25 °C
IAS
EAS
15
11.25
41
mJ
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
PD
26
3.6a, b
W
TA = 70 °C
2.3a, b
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)c, d
TJ, Tstg
- 50 to 150
260
°C
Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. t = 10 s.
c. See solder profile (www.vishay.com/ppg?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
d. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
e. Package limited.
Document Number: 67954
www.vishay.com
S11-1177-Rev. A, 13-Jun-11
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000




SIS782DN pdf, 반도체, 판매, 대치품
SiS782DN
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
50
VGS = 10 V thru 4 V
40
10
8
30
20
10
0
0
0.011
VGS = 3 V
VGS = 2 V
0.5 1 1.5 2
VDS - Drain-to-Source Voltage (V)
2.5
Output Characteristics
6
4 TC = 25 °C
TC = - 55 °C
2
TC = 125 °C
0
01234
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
1500
5
0.010
0.009
VGS = 4.5 V
1200
900
Ciss
0.008
0.007
VGS = 10 V
600
Crss
300
Coss
0.006
0
10 20 30 40
ID - Drain Current (A)
50
On-Resistance vs. Drain Current and Gate Voltage
10
ID = 10 A
8
6 VDS = 15 V
VDS = 10 V
4
VDS = 20 V
2
0
0 3.4 6.8 10.2 13.6 17.0
Qg - Total Gate Charge (nC)
Gate Charge
0
0 4 8 12 16
VDS - Drain-to-Source Voltage (V)
Capacitance
1.8
ID = 10 A
1.6
VGS = 10 V
20
1.4
VGS = 4.5 V
1.2
1.0
0.8
0.6
- 50 - 25
0
25 50 75 100 125 150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
www.vishay.com
Document Number: 67954
4 S11-1177-Rev. A, 13-Jun-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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SIS782DN 전자부품, 판매, 대치품
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
1
Duty Cycle = 0.5
SiS782DN
Vishay Siliconix
0.1
0.01
0.0001
0.2
0.1
0.05
0.02
Single Pulse
Notes:
PDM
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 81 °C/W
3. TJM - TA = PDMZthJA(t)
4. Surface Mounted
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
100
1000
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
0.0001
0.001
0.01
0.1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
1
10
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?67954.
Document Number: 67954
www.vishay.com
S11-1177-Rev. A, 13-Jun-11
7
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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SIS782DN

N-Channel 30V (D-S) MOSFET

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