Datasheet.kr   

SIS822DNT PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 SIS822DNT
기능 N-Channel 30V (D-S) MOSFET
제조업체 Vishay
로고 Vishay 로고 


전체 8 페이지

		

No Preview Available !

SIS822DNT 데이터시트, 핀배열, 회로
www.vishay.com
SiS822DNT
Vishay Siliconix
N-Channel 30 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
30
RDS(on) (Ω) MAX.
0.024 at VGS = 10 V
0.030 at VGS = 4.5 V
ID (A) a
12
12
0.8 mm
Thin PowerPAK® 1212-8 Single
D
D
D
6
D
7
8
5
Qg (TYP.)
3.8 nC
3.3 mm
1
Top View
3.3 mm
1
3
2
S
S
4S
G
Bottom View
Ordering Information:
SiS822DNT-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES
• TrenchFET® power MOSFET
• 100 % Rg and UIS tested
• Thin 0.8 mm profile
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
• Notebook PC
- System power
- Load switch
• Synchronous buck high-side
G
D
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC = 25 °C
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C
TA = 25 °C
ID
TA = 70 °C
Pulsed Drain Current (t = 100 μs)
IDM
Continuous Source-Drain Diode Current
TC = 25 °C
TA = 25 °C
IS
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
L = 0.1 mH
IAS
EAS
TC = 25 °C
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
PD
TA = 70 °C
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature) e, f
TJ, Tstg
LIMIT
30
± 20
12 a
12 a
8.7 b, c
7 b, c
30
12 a
2.7 b, c
5
1.25
15.6
10
3.2 b, c
2 b, c
-55 to 150
260
UNIT
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
TYPICAL
MAXIMUM
UNIT
Maximum Junction-to-Ambient b, d
Maximum Junction-to-Case (Drain)
t 10 s
Steady State
RthJA
RthJC
32
6.5
39
°C/W
8
Notes
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under steady state conditions is 81 °C/W.
e. See solder profile (www.vishay.com/doc?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection.
f. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
S14-1340-Rev. A, 30-Jun-14
1
Document Number: 62965
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000




SIS822DNT pdf, 반도체, 판매, 대치품
www.vishay.com
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100 0.08
ID = 7.8 A
0.06
SiS822DNT
Vishay Siliconix
10
TJ = 150 °C
TJ = 25 °C
1
0.0
0.2 0.4 0.6 0.8 1.0
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
1.2
0.04
TJ = 125 °C
0.02
TJ = 25 °C
0
0 2 4 6 8 10
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
1.9
1.8
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
- 50 - 25
ID = 250 µA
0 25 50 75 100 125 150
TJ - Temperature (°C)
Threshold Voltage
50
40
30
20
10
0
0.001
0.01
0.1 1
10
Time (s)
100 1000
Single Pulse Power
100
Limited by RDS(on)*
Limited by IDM
10
100 µs
1 ms
1
10 ms
100 ms
0.1
TA = 25 °C
Single Pulse
BVDSS Limited
1s
10 s
DC
0.01
0.1 1 10 100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
S14-1340-Rev. A, 30-Jun-14
4
Document Number: 62965
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

4페이지










SIS822DNT 전자부품, 판매, 대치품
www.vishay.com
Package Information
Vishay Siliconix
PowerPAK® 1212-8T
DIM.
MIN.
A 0.70
A1 0.00
b 0.23
c 0.23
D 3.20
D1 2.95
D2 1.98
D3 0.48
D4
D5
E 3.20
E1 2.95
E2 1.47
E3 1.75
E4
e
K
K1 0.35
H 0.30
L 0.30
L1 0.06
W 0.15
M
ECN: T13-0056-Rev. A, 18-Feb-13
DWG: 6012
MILLIMETERS
NOM.
0.75
-
0.30
0.28
3.30
3.05
2.11
-
0.47 TYP.
2.3 TYP.
3.30
3.05
1.60
1.85
0.34 TYP.
0.65 BSC
0.86 TYP.
-
0.41
0.43
0.13
-
0.25
0.125 TYP.
MAX.
0.80
0.05
0.41
0.33
3.40
3.15
2.24
0.89
3.40
3.15
1.73
1.98
-
0.51
0.56
0.20
12°
0.36
MIN.
0.028
0.000
0.009
0.009
0.126
0.116
0.078
0.019
0.126
0.116
0.058
0.069
0.014
0.012
0.012
0.002
0.006
INCHES
NOM.
0.030
-
0.012
0.011
0.130
0.120
0.083
-
0.0185 TYP.
0.090 TYP.
0.130
0.120
0.063
0.073
0.013 TYP.
0.026 BSC
0.034 TYP.
-
0.016
0.017
0.005
-
0.010
0.005 TYP.
MAX.
0.031
0.002
0.016
0.013
0.134
0.124
0.088
0.035
0.134
0.124
0.068
0.078
-
0.020
0.022
0.008
12°
0.014
Revison: 18-Feb-13
1 Document Number: 62836
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

7페이지



구       성총 8 페이지
다운로드[ SIS822DNT.PDF 데이터시트 ]
구매 문의
일반 IC 문의 : 샘플 및 소량 구매
-----------------------------------------------------------------------

전력 반도체 판매 ( IGBT, TR 모듈, SCR, 다이오드 모듈 )

휴대전화 : 010-3582-2743


상호 : 아이지 인터내셔날

전화번호 : 051-319-2877, [ 홈페이지 ]



링크공유

링크 :

관련 데이터시트

부품번호상세설명 및 기능제조사
SIS822DNT

N-Channel 30V (D-S) MOSFET

Vishay
Vishay

DataSheet.kr    |   2019   |  연락처   |  링크모음   |   검색  |   사이트맵