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SISA10DN PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 SISA10DN
기능 N-Channel 30V (D-S) MOSFET
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SISA10DN 데이터시트, 핀배열, 회로
New Product
N-Channel 30 V (D-S) MOSFET
SiSA10DN
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
30
RDS(on) () (Max.)
0.0037 at VGS = 10 V
0.0050 at VGS = 4.5 V
ID (A)a, g
30
30
Qg (Typ.)
15.4 nC
PowerPAK® 1212-8
3.30 mm
S
1S
3.30 mm
2
S
3G
4
D
8D
7
D
6
D
5
Bottom View
Ordering Information:
SiSA10DN-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES
• TrenchFET® Gen IV Power MOSFET
• 100 % Rg and UIS Tested
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
High Power Density DC/DC
• Synchronous Rectification
• VRMs and Embedded DC/DC
D
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC = 25 °C
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C
TA = 25 °C
ID
TA = 70 °C
Pulsed Drain Current (t = 300 µs)
IDM
Continuous Source-Drain Diode Current
TC = 25 °C
TA = 25 °C
IS
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
L =0.1 mH
IAS
EAS
TC = 25 °C
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
PD
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d, e
TA = 70 °C
TJ, Tstg
Limit
30
+ 20, - 16
30g
30g
25b, c
20b, c
80
30g
3b, c
20
20
39
25
3.6b, c
2.4b, c
- 55 to 150
260
Unit
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambientb, f
Maximum Junction-to-Case (Drain)
t 10 s
Steady State
RthJA
RthJC
26
2.4
34
°C/W
3.2
Notes:
a. Based on TC = 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See solder profile (www.vishay.com/doc?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 81 °C/W.
g. Package limited.
Document Number: 63819
For technical support, please contact: pmostechsupport@vishay.com
www.vishay.com
S12-0806-Rev. A, 16-Apr-12
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000




SISA10DN pdf, 반도체, 판매, 대치품
New Product
SiSA10DN
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100 0.010
TJ = 150 °C
10
1 TJ = 25 °C
0.008
0.006
0.004
0.002
ID = 10 A
TJ = 125 °C
TJ = 25 °C
0.1
0.0
0.2 0.4 0.6 0.8 1.0
VSD - Source-to-Drain Voltage (V)
1.2
Source-Drain Diode Forward Voltage
2.1
1.9
1.7
1.5
ID = 250 μA
1.3
1.1
0.9
- 50 - 25
0 25 50 75 100 125 150
TJ - Temperature (°C)
Threshold Voltage
1000
Limited by RDS(on)*
100
0.000
0
2468
VGS - Gate-to-Source Voltage (V)
10
On-Resistance vs. Gate-to-Source Voltage
80
60
40
20
0
0.001 0.01
0.1 1 10
Time (s)
100 1000
Single Pulse Power, Junction-to-Ambient
10 100 μs
1 ms
1 10 ms
0.1 TA = 25 °C
BVDSS Limited
100 ms
1s
10 s
DC
0.01
0.01 0.1 1 10
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area
100
www.vishay.com
For technical support, please contact: pmostechsupport@vishay.com
Document Number: 63819
4 S12-0806-Rev. A, 16-Apr-12
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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SISA10DN 전자부품, 판매, 대치품
www.vishay.com
Package Information
Vishay Siliconix
PowerPAK® 1212, (Single/Dual)
W
18
45
Z
2
H E2 K L
E4
1
2
3
4
L1
θθ
A1
2
E1
E
Notes:
1. Inch will govern
2 Dimensions exclusive of mold gate burrs
3. Dimensions exclusive of mold flash and cutting burrs
Detail Z
DIM.
MIN.
A 0.79
A1 0
b 0.23
c 0.13
D 3.00
D1 2.95
D2 1.98
D4
E 3.00
E1 2.95
E2 1.47
E3 1.75
E4
e
K
K1
H 0.15
L 0.15
L1 0.051
θ
W 0.15
M
ECN: C15-0077-Rev. K, 26-Jan-15
DWG: 5882
MILLIMETERS
0.31 TYP.
0.535 TYP.
0.65 BSC
0.61
0.35
0.125 TYP.
MAX.
1.12
0.05
0.41
0.33
3.61
3.21
2.70
3.61
3.21
2.21
1.98
0.51
0.56
0.204
12°
0.36
E3
Backside View of Single Pad
H
H
E2 K
E4
D1
L
1
2
3
D2
4
E3
Backside View of Dual Pad
MIN.
0.031
0
0.009
0.005
0.118
0.116
0.078
0.118
0.116
0.058
0.069
0.006
0.006
0.002
0.006
INCHES
0.012 TYP.
0.021 TYP.
0.026 BSC
0.024
0.014
0.005 TYP.
MAX.
0.044
0.002
0.016
0.013
0.142
0.126
0.106
0.142
0.126
0.087
0.078
0.020
0.022
0.008
12°
0.014
Revison: 26-Jan-15
1 Document Number: 71656
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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SISA10DN

N-Channel 30V (D-S) MOSFET

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