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SISA14DN PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 SISA14DN
기능 N-Channel 30V (D-S) MOSFET
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SISA14DN 데이터시트, 핀배열, 회로
N-Channel 30 V (D-S) MOSFET
SiSA14DN
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) () (Max.)
30 0.00510 at VGS = 10 V
0.00850 at VGS = 4.5 V
ID (A)f, g Qg (Typ.)
20 9.4 nC
PowerPAK® 1212-8
3.30 mm
D
8D
7
D
6
D
5
S
1S
3.30 mm
2
S
3G
4
Bottom View
Ordering Information:
SiSA14DN-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES
• TrenchFET® Gen IV Power MOSFET
• 100 % Rg and UIS Tested
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
• DC/DC Conversion
• Synchronous Rectification
• Synchronous Buck Converter
• DC/AC Inverter
G
D
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC = 25 °C
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C
TA = 25 °C
ID
Pulsed Drain Current (t = 300 µs)
TA = 70 °C
IDM
Continuous Source-Drain Diode Current
TC = 25 °C
TA = 25 °C
IS
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
L = 0.1 mH
IAS
EAS
TC = 25 °C
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
PD
TA = 70 °C
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)c, d
TJ, Tstg
Limit
30
+ 20, - 16
20g
20g
19.7a, b
10.4a, b
80
20g
3.2a, b
15
11.25
26.5
17
3.57a, b
2.3a, b
- 55 to 150
260
Unit
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta, e
Maximum Junction-to-Case (Drain)
t 10 s
Steady State
Symbol
RthJA
RthJC
Typical
28
3.8
Maximum
35
4.7
Unit
°C/W
Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. t = 10 s.
c. See solder profile (www.vishay.com/doc?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
d. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
e. Maximum under steady state conditions is 81 °C/W.
f. Based on TC = 25 °C.
g. Package limited.
Document Number: 63252
For technical questions, contact: pmostechsupport@vishay.com
www.vishay.com
S12-3076-Rev. A, 24-Dec-12
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000




SISA14DN pdf, 반도체, 판매, 대치품
New Product
SiSA14DN
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100 0.025
10
TJ = 150 °C
1
TJ = 25 °C
0.020
0.015
ID = 10 A
0.1
0.01
0.001
0.0 0.2 0.4 0.6 0.8 1.0 1.2
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.5
0.010
TJ = 125 °C
0.005
TJ = 25 °C
0.000
0 2 4 6 8 10
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
200
0.2 160
- 0.1
- 0.4
- 0.7
ID = 5 mA
ID = 250 μA
120
80
40
- 1.0
- 50 - 25 0
25 50 75 100 125 150
TJ - Temperature (°C)
Threshold Voltage
0
0.001
0.01
0.1
1
10
Time (s)
Single Pulse Power, Junction-to-Ambient
100
IDM Limited
10 ID Limited
100 μs
1 ms
Limited by RDS(on)*
1
10 ms
100 ms
1s
0.1 10 s
TA = 25 °C
Single Pulse
0.01
0.01
0.1
BVDSS Limited
1 10
DC
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
www.vishay.com
For technical questions, contact: pmostechsupport@vishay.com
Document Number: 63252
4 S12-3076-Rev. A, 24-Dec-12
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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SISA14DN 전자부품, 판매, 대치품
www.vishay.com
Package Information
Vishay Siliconix
PowerPAK® 1212, (Single/Dual)
W
18
45
Z
2
H E2 K L
E4
1
2
3
4
L1
θθ
A1
2
E1
E
Notes:
1. Inch will govern
2 Dimensions exclusive of mold gate burrs
3. Dimensions exclusive of mold flash and cutting burrs
Detail Z
DIM.
MIN.
A 0.79
A1 0
b 0.23
c 0.13
D 3.00
D1 2.95
D2 1.98
D4
E 3.00
E1 2.95
E2 1.47
E3 1.75
E4
e
K
K1
H 0.15
L 0.15
L1 0.051
θ
W 0.15
M
ECN: C15-0077-Rev. K, 26-Jan-15
DWG: 5882
MILLIMETERS
0.31 TYP.
0.535 TYP.
0.65 BSC
0.61
0.35
0.125 TYP.
MAX.
1.12
0.05
0.41
0.33
3.61
3.21
2.70
3.61
3.21
2.21
1.98
0.51
0.56
0.204
12°
0.36
E3
Backside View of Single Pad
H
H
E2 K
E4
D1
L
1
2
3
D2
4
E3
Backside View of Dual Pad
MIN.
0.031
0
0.009
0.005
0.118
0.116
0.078
0.118
0.116
0.058
0.069
0.006
0.006
0.002
0.006
INCHES
0.012 TYP.
0.021 TYP.
0.026 BSC
0.024
0.014
0.005 TYP.
MAX.
0.044
0.002
0.016
0.013
0.142
0.126
0.106
0.142
0.126
0.087
0.078
0.020
0.022
0.008
12°
0.014
Revison: 26-Jan-15
1 Document Number: 71656
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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SISA14DN

N-Channel 30V (D-S) MOSFET

Vishay
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