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SIZ340DT PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 SIZ340DT
기능 Dual N-Channel 30V (D-S) MOSFET
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SIZ340DT 데이터시트, 핀배열, 회로
www.vishay.com
SiZ340DT
Vishay Siliconix
Dual N-Channel 30 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) MAX.
0.0095 at VGS = 10 V
Channel-1 30
0.0137 at VGS = 4.5 V
0.0051 at VGS = 10 V
Channel-2 30
0.0070 at VGS = 4.5 V
ID (A)
30 a
22
40 a
40 a
Qg (Typ.)
5.6 nC
10.1 nC
FEATURES
• PowerPAIR® Optimizes high-side and
low-side MOSFETs for synchronous buck
converters
• TrenchFET® power Mosfets
• 100 % Rg and UIS tested
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
PowerPAIR® 3 x 3 G2
S2 8
S2 7
S2 6
5 S1/D2
(Pin 9)
3 mm 1 3 mm
Top View
D1
1
4
3
2 G1
D1
D1
D1
Bottom View
Ordering Information:
SiZ340DT-T1-GE3 (lead (Pb)-free and halogen-free)
APPLICATIONS
• Synchronous buck
- Battery charging
- Computer system power
- Graphic cards
• POL
D1
G1
N-Channel 1
MOSFET
S1/D2
G2
N-Channel 2
MOSFET
S2
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Channel-1
Channel-2
Unit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current (t = 100 μs)
Continuous Source Drain Diode Current
Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature) d,e
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
TC = 25 °C
TA = 25 °C
L = 0.1 mH
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
VDS
VGS
ID
IDM
IS
IAS
EAS
PD
TJ, Tstg
30
+20, -16
30 a 40 a
26.5
40 a
15.6 b,c
22.6 b,c
12.4 b,c
18.1 b,c
100 150
13.9 26
3.1 b,c
3.5 b,c
10 15
5 11
16.7 31
10.7 20
3.7 b,c
4.2 b,c
2.4 b,c
2.7 b,c
-55 to 150
260
V
A
mJ
W
°C
Notes
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See solder profile (www.vishay.com/doc?73257). The PowerPAIR 3 x 3 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
e. Rework conditions: Manual soldering with a soldering iron is not recommended for leadless components.
S14-0611-Rev. B, 24-Mar-14
1
Document Number: 62877
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000




SIZ340DT pdf, 반도체, 판매, 대치품
www.vishay.com
SiZ340DT
Vishay Siliconix
CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
50 5
VGS = 10 V thru 4 V
40
4
TC = 25 °C
30 3
VGS = 3 V
20 2
10
0
0
VGS = 2 V
0.5 1 1.5
VDS - Drain-to-Source Voltage (V)
2
Output Characteristics
1 TC = 125 °C
TC = - 55 °C
0
0 0.6 1.2 1.8 2.4 3
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
0.020
0.015
0.010
VGS = 4.5 V
0.005
VGS = 10 V
0
0 10 20 30 40
ID - Drain Current (A)
On-Resistance vs. Drain Current
50
900
Ciss
720
540
360
180
0
0
Crss
Coss
5 10 15
VDS - Drain-to-Source Voltage (V)
Capacitance
20
10
ID = 15.6 A
8
VDS = 8 V
6
VDS = 15 V
VDS = 24 V
4
2
1.7
ID = 15.6 A
1.45
1.2
0.95
VGS = 10 V
VGS = 4.5 V
0
0 2.6 5.2 7.8 10.4 13
Qg - Total Gate Charge (nC)
Gate Charge
0.7
- 50 - 25 0 25 50 75 100 125 150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
S14-0611-Rev. B, 24-Mar-14
4
Document Number: 62877
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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SIZ340DT 전자부품, 판매, 대치품
www.vishay.com
CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
SiZ340DT
Vishay Siliconix
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.0001
Single Pulse
Notes:
PDM
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 69 °C/W
3. TJM - TA = PDMZthJA(t)
4. Surface Mounted
0.001
0.01
0.1 1
Square Wave Pulse Duration (s)
10
Normalized Thermal Transient Impedance, Junction-to-Ambient
100
1000
1
Duty Cycle = 0.5
0.2
0.1
0.05
0.1
0.0001
0.02
Single Pulse
0.001
0.01
Square Wave Pulse Duration (s)
0.1
Normalized Thermal Transient Impedance, Junction-to-Case
1
S14-0611-Rev. B, 24-Mar-14
7
Document Number: 62877
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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SIZ340DT

Dual N-Channel 30V (D-S) MOSFET

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