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SIZ342DT PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 SIZ342DT
기능 Dual N-Channel 30V (D-S) MOSFET
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SIZ342DT 데이터시트, 핀배열, 회로
www.vishay.com
SiZ342DT
Vishay Siliconix
Dual N-Channel 30 V (D-S) MOSFET
PRODUCT SUMMARY
Channel-1
and
Channel-2
VDS (V)
30
RDS(on) (Ω) MAX.
0.0115 at VGS = 10 V
0.0153 at VGS = 4.5 V
ID (A)
30 a
27.5
Qg (Typ.)
4.5 nC
PowerPAIR® 3 x 3 G2
S2 8
S2 7
S2 6
5 S1/D2
(Pin 9)
3 mm 1 3 mm
Top View
D1
1
4
3
2 G1
D1
D1
D1
Bottom View
Ordering Information:
SiZ342DT-T1-GE3 (lead (Pb)-free and halogen-free)
FEATURES
• PowerPAIR® optimizes high-side and low-side
MOSFETs for synchronous buck converters
• TrenchFET® Gen IV power MOSFETs
• 100 % Rg and UIS tested
• Material categorization: for definitions of
compliance please see www.vishay.com/doc?99912
APPLICATIONS
• Synchronous buck
- Battery charging
- Computer system power
- Graphic cards
• POL
D1
G1
N-Channel 1
MOSFET
S1/D2
G2
N-Channel 2
MOSFET
S2
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
CHANNEL-1 AND CHANNEL-2
SYMBOL
LIMIT
Drain-Source Voltage
VDS 30
Gate-Source Voltage
TC = 25 °C
VGS
+20 / -16
30 a
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C
TA = 25 °C
TA = 70 °C
ID
26.5
15.6 b, c
12.4 b, c
Pulsed Drain Current (t = 100 μs)
IDM 100
Continuous Source Drain Diode Current
TC = 25 °C
TA = 25 °C
IS
13.9
3.1 b, c
Avalanche Current
Single Pulse Avalanche Energy
L = 0.1 mH
IAS
EAS
10
5
TC = 25 °C
16.7
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
TA = 70 °C
PD
10.7
3.7 b, c
2.4 b, c
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature) d, e
TJ, Tstg
-55 to 150
260
UNIT
V
A
mJ
W
°C
Notes
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See solder profile (www.vishay.com/doc?73257). The PowerPAIR 3 x 3 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
S15-0031-Rev. B, 19-Jan-15
1
Document Number: 62949
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000




SIZ342DT pdf, 반도체, 판매, 대치품
www.vishay.com
SiZ342DT
Vishay Siliconix
CHANNEL-1 AND CHANNEL-2 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
50
VGS = 10 V thru 4 V
10
40 8
30
20
10
0
0
VGS = 3 V
0.5 1 1.5
VDS - Drain-to-Source Voltage (V)
Output Characteristics
2
0.0215
0.0165
0.0115
0.0065
VGS = 4.5 V
VGS = 10 V
0.0015
0
10 20 30 40
ID - Drain Current (A)
On-Resistance vs. Drain Current
50
10
ID = 14.4 A
8
VDS = 8 V
6
VDS = 15 V, 24 V
4
2
6
4
2
0
0
840
630
TC = 25 °C
TC = 125 °C
TC = - 55 °C
0.75 1.5 2.25
3
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
Ciss
420
210
Crss
0
0
Coss
6 12 18 24
VDS - Drain-to-Source Voltage (V)
Capacitance
30
1.65
1.4
VGS = 10 V, 14.4 A
VGS = 4.5 V, 13 A
1.15
0.9
0
0
2468
Qg - Total Gate Charge (nC)
10
Gate Charge
0.65
- 50 - 25 0
25 50 75 100 125 150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
S15-0031-Rev. B, 19-Jan-15
4
Document Number: 62949
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

4페이지










SIZ342DT 전자부품, 판매, 대치품
www.vishay.com
SiZ342DT
Vishay Siliconix
CHANNEL-1 AND CHANNEL-2 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.0001
1
Single Pulse
Notes:
PDM
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 69 °C/W
3. TJM - TA = PDMZthJA(t)
4. Surface Mounted
0.001
0.01 0.1 1 10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
100
1000
Duty Cycle = 0.5
0.2
0.1
0.05
0.1
0.0001
0.02
Single Pulse
0.001
0.01
0.1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
1
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?62949.
S15-0031-Rev. B, 19-Jan-15
7
Document Number: 62949
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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SIZ342DT

Dual N-Channel 30V (D-S) MOSFET

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