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PDF SIZ704DT Data sheet ( Hoja de datos )
| Número de pieza | SIZ704DT | |
| Descripción | N-Channel 30V (D-S) MOSFET | |
| Fabricantes | Vishay | |
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New Product
N-Channel 30-V (D-S) MOSFETs
SiZ704DT
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.024 at VGS = 10 V
Channel-1 30
0.030 at VGS = 4.5 V
0.0135 at VGS = 10 V
Channel-2 30
0.017 at VGS = 4.5 V
ID (A)
12a
12a
16a
16a
Qg (Typ.)
3.8 nC
7.3 nC
Pin 1
PowerPAIR™ 6 x 3.7
G1 3.73 mm
1 D1
2
D1
D1
3
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFETs
• 100 % Rg Tested
• 100 % UIS Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
VIN/D1
• Notebook System Power
• POL
GHS •
1 VIN
2
VIN 3
Low Current DC/DC
GHS/G1
VIN N-Channel 1
MOSFET
VSW/S1/D2
G2
6 S2
5
S1/D2
S2
4
6.00 mm
GLS
6 GND
VSW
5 GND
4
GLS/G2
N-Channel 2
MOSFET
Ordering Information: SiZ704DT-T1-GE3 (Lead (Pb)-free and Halogen-free)
GND/S2
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Channel-1
Channel-2
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current
Source Drain Current Diode Current
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d, e
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
TC = 25 °C
TA = 25 °C
L = 0.1 mH
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
VDS
VGS
ID
IDM
IS
IAS
EAS
PD
TJ, Tstg
30 30
12a
12a
9.4b, c
7.5b, c
30
12a
3.1b, c
10
± 20
16a
16a
14b, c
11.2b, c
40
16a
3.7b, c
15
5 11
20 30
12.9 19
3.7b, c
4.5b, c
2.4b, c
2.9b, c
- 55 to 150
260
Unit
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
Channel-1
Channel-2
Parameter
Symbol
Typ. Max. Typ. Max.
Unit
Maximum Junction-to-Ambientb, f
Maximum Junction-to-Case (Drain)
t ≤ 10 s
Steady State
RthJA
RthJC
26 34 21 28
4.7 6.2 3.2 4.2
°C/W
Notes:
a. Package limited.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAIR is a leadless package. The end of the lead terminal is exposed copper (not
plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required
to ensure adequate bottom side solder interconnection.
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under Steady State conditions is 72 °C/W for Channel-1 and 67 °C/W for Channel-2.
Document Number: 65367
S09-1921-Rev. A, 28-Sep-09
www.vishay.com
1
1 page  
New Product
CHANNEL-1 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100 0.08
ID = 7.8 A
0.06
SiZ704DT
Vishay Siliconix
10
TJ = 150 °C
TJ = 25 °C
0.04
0.02
TJ = 125 °C
TJ = 25 °C
1
0.0 0.2 0.4 0.6 0.8 1.0
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
1.2
1.9
1.8
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
- 50 - 25
ID = 250 µA
0 25 50 75 100 125 150
TJ - Temperature (°C)
Threshold Voltage
100
Limited by RDS(on)*
0
0 2 4 6 8 10
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
30
25
20
15
10
5
0
0.001 0.01 0.1 1 10 100
Time (s)
Single Pulse Power
1000
10
100 µs
1
0.1 TA = 25 °C
Single Pulse
1 ms
10 ms
100 ms
1s
10 s
DC
BVDSS Limited
0.01
0.1 1 10 100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
Document Number: 65367
S09-1921-Rev. A, 28-Sep-09
www.vishay.com
5
5 Page 
New Product
CHANNEL-2 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
1
Duty Cycle = 0.5
SiZ704DT
Vishay Siliconix
0.2
0.1
0.1
0.05
0.02
0.01
10-4
1
Notes:
PDM
Single Pulse
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 67 °C/W
3. TJM - TA = PDMZthJA(t)
4. Surface Mounted
10-3
10-2
10-1
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
100
1000
Duty Cycle = 0.5
0.2
0.1
0.1
10-4
0.02
Single Pulse
0.05
10-3
10-2
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
10-1
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?65367.
Document Number: 65367
S09-1921-Rev. A, 28-Sep-09
www.vishay.com
11
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet SIZ704DT.PDF ] | |
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