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SIZ902DT PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 SIZ902DT
기능 Dual N-Channel 30V (D-S) MOSFET
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SIZ902DT 데이터시트, 핀배열, 회로
New Product
SiZ902DT
Vishay Siliconix
Dual N-Channel 30 V (D-S) MOSFETs
PRODUCT SUMMARY
VDS (V) RDS(on) () (Max.)
Channel-1
0.0120 at VGS = 10 V
30
0.0145 at VGS = 4.5 V
Channel-2
0.0064 at VGS = 10 V
30
0.0083 at VGS = 4.5 V
ID (A)
16a
16a
16a
16a
Qg (Typ.)
6.8 nC
21 nC
FEATURES
Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFETs
• 100 % Rg and UIS Tested
Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Notebook System Power
• POL
• Synchronous Buck Converter
PowerPAIR® 6 x 5
Pin 1
1
G2
8
7
S1/D2
Pin 9
S2
6
5
G1
D1
5 mm
2 D1
D1 3
D1
4
6 mm
Ordering Information: SiZ902DT-T1-GE3 (Lead (Pb)-free and Halogen-free)
D1
G1
N-Channel 1
MOSFET
G2
N-Channel 2
MOSFET
S2
S1/D2
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Channel-1
Channel-2
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current (t = 300 µs)
Continuous Source Drain Diode Current
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d, e
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
TC = 25 °C
TA = 25 °C
L = 0.1 mH
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
VDS
VGS
ID
IDM
IS
IAS
EAS
PD
TJ, Tstg
30
± 20
16a 16a
16a 16a
14.3b, c
11.4b, c
16a, b, c
16a, b, c
50
16a
3.4b, c
80
16a
4.1b, c
18 30
16 45
29 66
18 42
4.2b, c
2.7b, c
5b, c
3.2b, c
- 55 to 150
260
Unit
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
Channel-1
Channel-2
Parameter
Symbol
Typ. Max. Typ. Max.
Unit
Maximum Junction-to-Ambientb, f
Maximum Junction-to-Case (Drain)
t 10 s
Steady State
RthJA
RthJC
24 30 20 25
3.4 4.3 1.5 1.9
°C/W
Notes:
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See solder profile (www.vishay.com/doc?73257). The PowerPAIR is a leadless package. The end of the lead terminal is exposed copper (not
plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required
to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 65 °C/W for channel-1 and 57 °C/W for channel-2.
Document Number: 63465
www.vishay.com
S11-2380 Rev. B, 28-Nov-11
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000




SIZ902DT pdf, 반도체, 판매, 대치품
New Product
SiZ902DT
Vishay Siliconix
CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
60
VGS = 10 V thru 4 V
50
40
VGS = 3 V
30
20
10
0
0.0
0.014
VGS = 2 V
0.5 1.0 1.5 2.0 2.5
VDS - Drain-to-Source Voltage (V)
Output Characteristics
3.0
20
16
12
TC = 25 °C
8
4
TC = 125 °C
TC = - 55 °C
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
1200
0.012
VGS = 4.5 V
1000
800
Ciss
0.010
VGS = 10 V
0.008
0.006
0
10 20 30 40 50
ID - Drain Current (A)
On-Resistance vs. Drain Current
10
ID = 13.8 A
8
VDS = 15 V
6
VDS = 7.5 V
4
VDS = 24 V
60
2
0
0 3 6 9 12 15
Qg - Total Gate Charge (nC)
Gate Charge
600
400
Coss
200
Crss
0
0 5 10 15 20 25
VDS - Drain-to-Source Voltage (V)
Capacitance
30
1.7
1.6 ID = 13.8 A
1.5
1.4 VGS = 10 V; 4.5 V
1.3
1.2
1.1
1.0
0.9
0.8
0.7
- 50 -- 25
0 25 50 75 100 125
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
150
www.vishay.com
Document Number: 63465
4 S11-2380 Rev. B, 28-Nov-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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SIZ902DT 전자부품, 판매, 대치품
New Product
CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
SiZ902DT
Vishay Siliconix
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.0001
Notes:
PDM
Single Pulse
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 65 °C/W
3. TJM - TA = PDMZthJA(t)
4. Surface Mounted
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
100
1000
1
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
0.1
0.0001
0.001
0.01
Square Wave Pulse Duration (s)
0.1
Normalized Thermal Transient Impedance, Junction-to-Case
1
Document Number: 63465
www.vishay.com
S11-2380 Rev. B, 28-Nov-11
7
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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SIZ902DT

Dual N-Channel 30V (D-S) MOSFET

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