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PDF SIZ920DT Data sheet ( Hoja de datos )
| Número de pieza | SIZ920DT | |
| Descripción | Dual N-Channel 30V (D-S) MOSFET | |
| Fabricantes | Vishay | |
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SiZ920DT
Vishay Siliconix
Dual N-Channel 30 V (D-S) MOSFETs
PRODUCT SUMMARY
VDS (V) RDS(on) () (Max.)
Channel-1
0.0071 at VGS = 10 V
30
0.0089 at VGS = 4.5 V
Channel-2
30 0.0030 at VGS = 10 V
0.0035 at VGS = 4.5 V
ID (A)
40a
40a
40a
40a
Qg (Typ.)
10.5 nC
29 nC
PowerPAIR® 6 x 5
Pin 1
1
G2
8
7
S1/D2
Pin 9
S2
6
5
G1
D1
2
D1 3
5 mm
D1
D1
4
6 mm
Ordering Information:
SiZ920DT-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES
• TrenchFET® Power MOSFETs
• 100 % Rg and UIS Tested
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
• CPU Core Power
• Computer Peripherals
• POL
• Synchronous Buck Converter G1
N-Channel 1
MOSFET
D1
S1/D2
G2
N-Channel 2
MOSFET
S2
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Channel-1
Channel-2
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current (t = 300 µs)
Continuous Source Drain Diode Current
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d, e
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
TC = 25 °C
TA = 25 °C
L = 0.1 mH
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
VDS
VGS
ID
IDM
IS
IAS
EAS
PD
TJ, Tstg
30
40a
40a
22b, c
17b, c
70
28a
3.6b, c
± 20
40a
40a
32b, c
26b, c
120
28a
4.3b, c
25 40
31 80
39 100
25
4.3b, c
2.8b, c
64
5.2b, c
3.3b, c
- 55 to 150
260
Unit
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
Channel-1
Channel-2
Parameter
Symbol
Typ. Max. Typ. Max.
Unit
Maximum Junction-to-Ambientb, f
Maximum Junction-to-Case (Drain)
t 10 s
Steady State
RthJA
RthJC
23 29 19 24
2.5 3.2
1 1.25
°C/W
Notes:
a. Package limited - TC = 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See solder profile (www.vishay.com/doc?73257). The PowerPAIR is a leadless package. The end of the lead terminal is exposed copper (not
plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required
to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 65 °C/W for channel-1 and 55 °C/W for channel-2.
Document Number: 63916
For technical questions, contact: [email protected]
www.vishay.com
S12-0975-Rev. A, 30-Apr-12
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1 page  
New Product
CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100 0.02
TJ = 150 °C
10
1 TJ = 25 °C
0.015
0.01
0.005
SiZ920DT
Vishay Siliconix
ID = 18.9 A
TJ = 125 °C
TJ = 25 °C
0.1
0.0
0.2 0.4 0.6 0.8 1.0
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
1.2
2.1
0
0 2 4 6 8 10
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
100
1.8
ID = 250 μA
1.5
1.2
80
60
40
20
0.9
- 50 - 25
0 25 50 75 100 125 150
TJ - Temperature (°C)
Threshold Voltage
0
0.001
0.01 0.1
Time (s)
1
Single Pulse Power
100
Limited by RDS(on)*
10
100 μs
1 ms
1 10 ms
100 ms
1s
10 s
0.1
DC
TA = 25 °C
Single Pulse
BVDSS Limited
0.01
0.1
1 10 100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
10
Document Number: 63916
For technical questions, contact: [email protected]
www.vishay.com
S12-0975-Rev. A, 30-Apr-12
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
5 Page 
New Product
CHANNEL-2 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
SiZ920DT
Vishay Siliconix
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.0001
Notes:
PDM
Single Pulse
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 55 °C/W
3. TJM - TA = PDMZthJA(t)
4. Surface Mounted
0.001
0.01 0.1
1
Square Wave Pulse Duration (s)
10
Normalized Thermal Transient Impedance, Junction-to-Ambient
100
1000
1
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
0.1
0.0001
0.001
Square Wave Pulse Duration (s)
0.01
Normalized Thermal Transient Impedance, Junction-to-Case
0.1
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?63916.
Document Number: 63916
For technical questions, contact: [email protected]
www.vishay.com
S12-0975-Rev. A, 30-Apr-12
11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
11 Page | ||
| Páginas | Total 14 Páginas | |
| PDF Descargar | [ Datasheet SIZ920DT.PDF ] | |
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