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SIZ904DT PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 SIZ904DT
기능 Dual N-Channel 30V (D-S) MOSFET
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SIZ904DT 데이터시트, 핀배열, 회로
New Product
SiZ904DT
Vishay Siliconix
Dual N-Channel 30 V (D-S) MOSFETs
PRODUCT SUMMARY
Channel-1
Channel-2
VDS (V)
30
30
RDS(on) () Max.
0.024 at VGS = 10 V
0.030 at VGS = 4.5 V
0.0135 at VGS = 10 V
0.017 at VGS = 4.5 V
ID (A)
12a
12a
16a
16a
Qg (Typ.)
3.8 nC
7.3 nC
FEATURES
Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFETs
• 100 % Rg and UIS Tested
Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Notebook System Power
• POL
• Low Current DC/DC
PowerPAIR® 6 x 5
Pin 1
1
G2
8
7
S1/D2
Pin 9
S2
6
5
G1
D1
2
D1 3
5 mm
D1
D1
4
6 mm
Ordering Information: SiZ904DT-T1-GE3 (Lead (Pb)-free and Halogen-free)
D1
G1
N-Channel 1
MOSFET
G2
N-Channel 2
MOSFET
S2
S1/D2
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Channel-1
Channel-2
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current (t = 300 µs)
Source Drain Current Diode Current
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d, e
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
TC = 25 °C
TA = 25 °C
L = 0.1 mH
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
VDS
VGS
ID
IDM
IS
IAS
EAS
PD
TJ, Tstg
30 30
± 20
12a
12a
9.5b, c
7.6b, c
16a
16a
14.5b, c
11.6b, c
30
12a
3.2b, c
40
16a
4b, c
10 15
5 11
20 33
12.9 21
3.8b, c
2.4b, c
4.8b, c
3.1b, c
- 55 to 150
260
Unit
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Channel-1
Typ. Max.
Channel-2
Typ. Max.
Unit
Maximum Junction-to-Ambientb, f
Maximum Junction-to-Case (Drain)
t 10 s
Steady State
RthJA
RthJC
25 33 20 26
4.7 6.2 3 3.8
°C/W
Notes:
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See solder profile (www.vishay.com/doc?73257). The PowerPAIR is a leadless package. The end of the lead terminal is exposed copper (not
plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required
to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 68 °C/W for Channel-1 and 61 °C/W for Channel-2.
Document Number: 63482
www.vishay.com
S11-2380-Rev. B, 28-Nov-11
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000




SIZ904DT pdf, 반도체, 판매, 대치품
New Product
SiZ904DT
Vishay Siliconix
CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
30
VGS = 10 V thru 4 V
25
20
15
VGS = 3 V
10
5
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0
VDS - Drain-to-Source Voltage (V)
Output Characteristics
10
8
6
4
TC = 25 °C
2
TC = 125 °C
0 TC = - 55 °C
0.0 0.5 1.0 1.5 2.0 2.5 3.0
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
0.035
600
0.030
0.025
VGS = 4.5 V
0.020
0.015
VGS = 10 V
0.010
0
5 10 15 20 25
ID - Drain Current (A)
On-Resistance vs. Drain Current
30
500 Ciss
400
300
200
Coss
100
Crss
0
05
10 15 20 25
VDS - Drain-to-Source Voltage (V)
Capacitance
30
10
ID = 7.8 A
8
6
VDS = 15 V
4
2
VDS = 24 V
1.8
ID = 7.8 A
1.6
1.4
1.2
1.0
0.8
VGS = 10 V
VGS = 4.5 V
0
02468
Qg - Total Gate Charge (nC)
Gate Charge
0.6
- 50 - 25
0 25 50 75 100 125 150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
www.vishay.com
Document Number: 63482
4 S11-2380-Rev. B, 28-Nov-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

4페이지










SIZ904DT 전자부품, 판매, 대치품
New Product
CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
SiZ904DT
Vishay Siliconix
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.0001
Notes:
PDM
Single Pulse
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 68 °C/W
3. TJM - TA = PDMZthJA(t)
4. Surface Mounted
0.001
0.01
0.1
1
Square Wave Pulse Duration (s)
10
100 1000
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.0001
0.05
0.02
Single Pulse
0.001
0.01
Square Wave Pulse Duration (s)
0.1
Normalized Thermal Transient Impedance, Junction-to-Case
1
Document Number: 63482
www.vishay.com
S11-2380-Rev. B, 28-Nov-11
7
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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SIZ904DT

Dual N-Channel 30V (D-S) MOSFET

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