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SIZ914DT PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 SIZ914DT
기능 Dual N-Channel 30V (D-S) MOSFET
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SIZ914DT 데이터시트, 핀배열, 회로
SiZ914DT
Vishay Siliconix
Dual N-Channel 30 V (D-S) MOSFETs
PRODUCT SUMMARY
Channel-1
Channel-2
VDS (V) RDS(on) () (Max.)
0.00640 at VGS = 10 V
30
0.01000 at VGS = 4.5 V
30 0.00137 at VGS = 10 V
0.00194 at VGS = 4.5 V
ID (A)g Qg (Typ.)
16a
7.2 nC
16a
40a
30.1 nC
40a
PowerPAIR® 6 x 5
Pin 1
1
G2
8
7
S1/D2
Pin 9
S2
6
5
G1
D1
2
D1 3
5 mm
D1
D1
4
6 mm
Ordering Information:
SiZ914DT-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES
• TrenchFET® Gen IV Power MOSFETs
• 100 % Rg and UIS Tested
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
D1
• CPU Core Power
• Computer/Server Peripherals
• Synchronous Buck Converter G1
• POL
• Telecom DC/DC
N-Channel 1
MOSFET
G2
N-Channel 2
MOSFET
S2
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Channel-1
Channel-2
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current (t = 100 µs)
Continuous Source Drain Diode Current
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d, e
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
TC = 25 °C
TA = 25 °C
L = 0.1 mH
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
VDS
VGS
ID
IDM
IS
IAS
EAS
PD
TJ, Tstg
30
+ 20, - 16
16a 40a
16a 40a
16a, b, c
40a, b, c
15.5b, c
38.8b, c
80 100
19
3.25b, c
28
4.3b, c
10 20
5 20
22.7 100
14.5
3.9b, c
2.5b, c
64
5.2b, c
3.3b, c
- 55 to 150
260
S1/D2
Schottky
Diode
Unit
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
Channel-1
Channel-2
Parameter
Symbol
Typ. Max. Typ. Max.
Unit
Maximum Junction-to-Ambientb, f
Maximum Junction-to-Case (Drain)
t 10 s
Steady State
RthJA
RthJC
25 32 19 24
4.4 5.5
1 1.25
°C/W
Notes:
a. Package limited
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See solder profile (www.vishay.com/doc?73257). The PowerPAIR is a leadless package. The end of the lead terminal is exposed copper (not
plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required
to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 62 °C/W for channel-1 and 55 °C/W for channel-2.
g. TC = 25 °C.
Document Number: 62905
For technical questions, contact: pmostechsupport@vishay.com
www.vishay.com
S13-2181-Rev. A, 14-Oct-13
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000




SIZ914DT pdf, 반도체, 판매, 대치품
SiZ914DT
Vishay Siliconix
CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
80
VGS = 10 V thru 5 V
60 VGS = 4 V
40
20
0
0
VGS = 3 V
0.5 1 1.5
VDS - Drain-to-Source Voltage (V)
Output Characteristics
2
5
4
3
TC = 25 °C
2
1
TC = 125 °C
0 TC = - 55 °C
0 0.6 1.2 1.8 2.4 3
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
0.0150
0.0120
0.0090 VGS = 4.5 V
0.0060
VGS = 10 V
0.0030
0.0000
0
14 28 42 56
ID - Drain Current (A)
On-Resistance vs. Drain Current
70
10
ID = 19 A
8
VDS = 15 V
6
VDS = 8 V
4
VDS = 24 V
2
1350
1080
Ciss
810
540
270
Crss
Coss
0
0 5 10 15 20
VDS - Drain-to-Source Voltage (V)
Capacitance
1.7
ID = 19 A
1.45
VGS = 10 V
1.2 VGS = 4.5 V
0.95
0
0
5 10 15 20
Qg - Total Gate Charge (nC)
Gate Charge
0.7
- 50 - 25 0
25 50 75 100 125 150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
www.vishay.com
For technical questions, contact: pmostechsupport@vishay.com
Document Number: 62905
4 S13-2181-Rev. A, 14-Oct-13
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

4페이지










SIZ914DT 전자부품, 판매, 대치품
CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
SiZ914DT
Vishay Siliconix
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.0001
Single Pulse
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
100
1000
1
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
0.1
0.0001
0.001
0.01
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
0.1
Document Number: 62905
For technical questions, contact: pmostechsupport@vishay.com
www.vishay.com
S13-2181-Rev. A, 14-Oct-13
7
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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SIZ914DT

Dual N-Channel 30V (D-S) MOSFET

Vishay
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