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SIZ916DT PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 SIZ916DT
기능 Dual N-Channel 30V (D-S) MOSFET
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SIZ916DT 데이터시트, 핀배열, 회로
www.vishay.com
SiZ916DT
Vishay Siliconix
Dual N-Channel 30 V (D-S) MOSFETs
PRODUCT SUMMARY
Channel-1
Channel-2
VDS (V)
30
30
RDS(on) () (MAX.)
0.00640 at VGS = 10 V
0.01000 at VGS = 4.5 V
0.00130 at VGS = 10 V
0.00175 at VGS = 4.5 V
ID (A) g
16 a
16 a
40 a
40 a
Qg (TYP.)
7.2 nC
45 nC
PowerPAIR® 6 x 5 G2
S2
S2
S2
6
7
8
5 S1/D2
(Pin 9)
6 mm
1 5 mm
Top View
D1 1
4
D1
3
D1
2
D1
G1
Bottom View
Ordering Information:
SiZ916DT-T1-GE3 (lead (Pb)-free and halogen-free)
FEATURES
• TrenchFET® Gen IV power MOSFETs
• 100 % Rg and UIS tested
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
• CPU core power
• Computer/server peripherals
• Synchronous buck converter
• POL
• Telecom DC/DC
G1
N-Channel 1
MOSFET
G2
N-Channel 2
MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
CHANNEL-1
CHANNEL-2
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current (t = 300 μs)
Continuous Source Drain Diode Current
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature) d, e
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
TC = 25 °C
TA = 25 °C
L = 0.1 mH
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
VDS
VGS
ID
IDM
IS
IAS
EAS
PD
TJ, Tstg
30
+20, -16
16 a
40 a
16 a
40 a
16 a, b, c
40 a, b, c
15.5 b, c
38.8 b, c
80 100
19 28
3.25 b, c
4.3 b, c
10 15
5 11.25
22.7 100
14.5 64
3.9 b, c
5.2 b, c
2.5 b, c
3.3 b, c
-55 to 150
260
D1
S1/D2
S2
UNIT
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
CHANNEL-1
TYP. MAX.
CHANNEL-2
TYP. MAX.
UNIT
Maximum Junction-to-Ambient b, f
Maximum Junction-to-Case (Drain)
t 10 s
Steady State
RthJA
RthJC
25 32 19 24
4.4 5.5
1 1.25
°C/W
Notes
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See solder profile (www.vishay.com/doc?73257). The PowerPAIR is a leadless package. The end of the lead terminal is exposed copper (not
plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 62 °C/W for channel-1 and 55 °C/W for channel-2.
g. TC = 25 °C.
S15-1672-Rev. B, 20-Jul-15
1
Document Number: 62721
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000




SIZ916DT pdf, 반도체, 판매, 대치품
www.vishay.com
SiZ916DT
Vishay Siliconix
CHANNEL-1 TYPICAL CHARACTERISTICS (TJ = 25 °C, unless otherwise noted)
80
VGS = 10 V thru 5 V
5
60
VGS = 4 V
4
3
40 TC = 25 °C
2
20
0
0
VGS = 3 V
0.5 1 1.5
VDS - Drain-to-Source Voltage (V)
Output Characteristics
2
1
TC = 125 °C
0 TC = - 55 °C
0 0.6 1.2 1.8 2.4 3
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
0.015
0.012
0.009 VGS = 4.5 V
0.006
VGS = 10 V
0.003
0
0 14 28 42 56 70
ID - Drain Current (A)
On-Resistance vs. Drain Current
1350
1080
Ciss
810
540
270
Crss
Coss
0
0 5 10 15 20
VDS - Drain-to-Source Voltage (V)
Capacitance
10
ID = 19 A
8
VDS = 15 V
6
VDS = 8 V
4
VDS = 24 V
2
1.7
ID = 19 A
1.45
1.2
0.95
VGS = 10 V
VGS = 4.5 V
0
0 5 10 15 20
Qg - Total Gate Charge (nC)
0.7
- 50 - 25 0
25 50 75 100 125 150
TJ - Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
S15-1672-Rev. B, 20-Jul-15
4
Document Number: 62721
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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SIZ916DT 전자부품, 판매, 대치품
www.vishay.com
CHANNEL-1 TYPICAL CHARACTERISTICS (TJ = 25 °C, unless otherwise noted)
SiZ916DT
Vishay Siliconix
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.0001
Single Pulse
0.001
0.01
0.1 1
Square Wave Pulse Duration (s)
10
Normalized Thermal Transient Impedance, Junction-to-Ambient
100
1000
1
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
0.1
0.0001
0.001
0.01
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
0.1
S15-1672-Rev. B, 20-Jul-15
7
Document Number: 62721
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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SIZ916DT

Dual N-Channel 30V (D-S) MOSFET

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