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PDF SIZ998DT Data sheet ( Hoja de datos )
| Número de pieza | SIZ998DT | |
| Descripción | Dual N-Channel 30V (D-S) MOSFET | |
| Fabricantes | Vishay | |
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SiZ998DT
Vishay Siliconix
Dual N-Channel 30 V (D-S) MOSFETs
PRODUCT SUMMARY
Channel-
1
Channel-
2
VDS (V)
30
30
RDS(on) (Ω) (MAX.)
0.0067 at VGS = 10 V
0.0100 at VGS = 4.5 V
0.0028 at VGS = 10 V
0.0038 at VGS = 4.5 V
ID (A) a, g Qg (TYP.)
20
5.4 nC
20
60
13.2 nC
60
PowerPAIR® 6 x 5 G2
S2
S2
S2
6
7
8
5 S1/D2
(Pin 9)
6 mm
1 5 mm
Top View
D1 1
4
D1
3
D1
2
D1
G1
Bottom View
Ordering Information:
SiZ998DT-T1-GE3 (lead (Pb)-free and halogen-free)
FEATURES
• TrenchFET® Gen IV power MOSFETs
• SkyFET® low-side MOSFET with integrated
Schottky
• 100 % Rg and UIS tested
• Material categorization: for definitions of
compliance please see www.vishay.com/doc?99912
APPLICATIONS
• CPU core power
• Computer/server peripherals
• POL
• Synchronous buck converter
• Telecom DC/DC
D1
G1
N-Channel 1
MOSFET
G2
N-Channel 2
MOSFET
S2
S1/D2
Schottky
Diode
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
CHANNEL-1
CHANNEL-2
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current (t = 100 μs)
Continuous Source Drain Diode Current
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature) d, e
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
TC = 25 °C
TA = 25 °C
L = 0.1 mH
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
VDS
VGS
ID
IDM
IS
IAS
EAS
PD
TJ, Tstg
30
+20, -16
20 a
60 a
20 a
60 a
18.8 b, c
32.8 b, c
15 c
26.2 b, c
90 130
16.8 27.4
3.2 b, c
4 b, c
15 20
11.25
20
20.2 32.9
12.9
21.1
3.8 b, c
4.8 b, c
2.4 b, c
3.1 b, c
-55 to +150
260
UNIT
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
CHANNEL-1
TYP. MAX.
CHANNEL-2
TYP. MAX.
UNIT
Maximum Junction-to-Ambient b, f
Maximum Junction-to-Case (Drain)
t ≤ 10 s
Steady State
RthJA
RthJC
26 33 21 26
4.7 6.2 3 3.8
°C/W
Notes
a. Package limited
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See solder profile (www.vishay.com/doc?73257). The PowerPAIR is a leadless package. The end of the lead terminal is exposed copper (not
plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 68 °C/W for channel-1 and 61 °C/W for channel-2.
g. TC = 25 °C.
S15-0144-Rev. A, 02-Feb-15
1
Document Number: 62979
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1 page  
www.vishay.com
CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100 0.015
SiZ998DT
Vishay Siliconix
10 TJ = 150 °C
1 TJ = 25 °C
0.012
0.009
0.006
0.003
ID = 19 A
TJ = 125 °C
TJ = 25 °C
0.1
0.0
0.2 0.4 0.6 0.8 1.0
VSD - Source-to-Drain Voltage (V)
1.2
Source-Drain Diode Forward Voltage
2.0
1.8
1.6
1.4
1.2
ID = 250 μA
1.0
0.8
0.6
- 50 - 25
0 25 50 75 100 125 150
TJ - Temperature (°C)
Threshold Voltage
1000
100
Limited by RDS(on)*
0.000
0
2468
VGS - Gate-to-Source Voltage (V)
10
On-Resistance vs. Gate-to-Source Voltage
50
40
30
20
10
0
0.001 0.01
0.1 1
10
Time (s)
100 1000
Single Pulse Power, Junction-to-Ambient
IDM Limited
10 100 μs
1
0.1 TA = 25 °C
1 ms
10 ms
100 ms
1s
10 s
DC
0.01
0.1
BVDSS Limited
1 10 100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
S15-0144-Rev. A, 02-Feb-15
5
Document Number: 62979
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
5 Page 
www.vishay.com
CHANNEL-2 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
SiZ998DT
Vishay Siliconix
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.0001
Notes:
PDM
Single Pulse
0.001
0.01
0.1 1
Square Wave Pulse Duration (s)
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 61 °C/W
3. TJM - TA = PDMZthJA(t)
4. Surface Mounted
10 100 1000
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Duty Cycle = 0.5
0.2
0.1
0.05
0.1
0.0001
0.02
Single Pulse
0.001
Square Wave Pulse Duration (s)
0.01
Normalized Thermal Transient Impedance, Junction-to-Case
0.1
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?62979.
S15-0144-Rev. A, 02-Feb-15
11
Document Number: 62979
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
11 Page | ||
| Páginas | Total 14 Páginas | |
| PDF Descargar | [ Datasheet SIZ998DT.PDF ] | |
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