Datasheet.kr   

SUD42N03-3m9P PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 SUD42N03-3m9P
기능 N-Channel 30V (D-S) MOSFET
제조업체 Vishay
로고 Vishay 로고 


전체 8 페이지

		

No Preview Available !

SUD42N03-3m9P 데이터시트, 핀배열, 회로
SUD42N03-3m9P
Vishay Siliconix
N-Channel 30 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
30
RDS(on) ()
0.0039 at VGS = 10 V
0.0045 at VGS = 4.5 V
ID (A)
107d
103d
Qg (Typ.)
67
TO-252
FEATURES
Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• 100 % Rg and UIS Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• DC/DC Converters
- Synchronous Buck Low Side
D
GDS
Top View
Drain Connected to Tab
Ordering Information: SUD42N03-3m9P-GE3 (Lead (Pb)-free and Halogen-free)
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current (t = 300 µs)
TC = 25 °C (Silicon Limited)
TC = 70 °C (Silicon Limited)
TC = 25 °C (Package Limited)
Avalanche Current
Single Avalanche Energya
L = 0.1 mH
Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
TC = 25 °C
TA = 25 °Cc
VDS
VGS
ID
IDM
IAS
EAS
PD
TJ, Tstg
Limit
30
± 20
107d
85d
42
120
45
101
73.5b
2.5
- 55 to 150
Unit
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Limit
Junction-to-Ambient (PCB Mount)c
RthJA
50
Junction-to-Case (Drain)
RthJC
1.7
Notes:
a. Duty cycle 1 %.
b. See SOA curve for voltage derating.
c. When mounted on 1" square PCB (FR-4 material).
d. Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 42 A.
Document Number: 66824
S10-2006-Rev. A, 06-Sep-10
Unit
°C/W
www.vishay.com
1




SUD42N03-3m9P pdf, 반도체, 판매, 대치품
SUD42N03-3m9P
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100 2.1
TJ = 150 °C
10
1.8
ID = 250 µA
1.5
TJ = 25 °C
1.2
1
0.9
0.1
0.0
0.2 0.4 0.6 0.8 1.0
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
1.2
5000
4000
Ciss
3000
2000
Coss
1000
Crss
0
0 5 10 15 20 25
VDS - Drain-to-Source Voltage (V)
Capacitance
1.8
ID = 20 A
1.5
30
0.6
- 50 - 25
0 25 50 75 100 125 150
TJ - Temperature (°C)
Threshold Voltage
41
39
ID = 250 µA
37
35
33
- 50 - 25
0
25 50 75 100 125 150
TJ - Junction Temperature (°C)
Drain Source Breakdown vs. Junction Temperature
160
120
1.2
0.9 VGS = 10 V
0.6 VGS = 4.5 V
- 50 - 25 0 25 50 75 100 125 150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
www.vishay.com
4
80
Package Limited
40
0
0 25 50 75 100 125 150
TC - Case Temperature (°C)
Current Derating
Document Number: 66824
S10-2006-Rev. A, 06-Sep-10

4페이지










SUD42N03-3m9P 전자부품, 판매, 대치품
RECOMMENDED MINIMUM PADS FOR DPAK (TO-252)
0.224
(5.690)
Application Note 826
Vishay Siliconix
Return to Index Return to Index
0.180
(4.572)
0.055
(1.397)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Document Number: 72594
Revision: 21-Jan-08
www.vishay.com
3

7페이지



구       성총 8 페이지
다운로드[ SUD42N03-3m9P.PDF 데이터시트 ]
구매 문의
일반 IC 문의 : 샘플 및 소량 구매
-----------------------------------------------------------------------

전력 반도체 판매 ( IGBT, TR 모듈, SCR, 다이오드 모듈 )

휴대전화 : 010-3582-2743


상호 : 아이지 인터내셔날

전화번호 : 051-319-2877, [ 홈페이지 ]



링크공유

링크 :

관련 데이터시트

부품번호상세설명 및 기능제조사
SUD42N03-3m9P

N-Channel 30V (D-S) MOSFET

Vishay
Vishay

DataSheet.kr    |   2019   |  연락처   |  링크모음   |   검색  |   사이트맵