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TVS3V3L4U PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 TVS3V3L4U
기능 TVS Diodes
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TVS3V3L4U 데이터시트, 핀배열, 회로
TVS Diodes
Transient Voltage Suppressor Diodes
TVS3V3L4U
Low Capacitance ESD / Transient / Surge Protection Array
TVS3V3L4U
Data Sheet
Revision 2.4, 2013-02-06
Final
Power Management & Multimarket




TVS3V3L4U pdf, 반도체, 판매, 대치품
TVS3V3L4U
Low Capacitance ESD / Transient / Surge Protection Array
1 Low Capacitance ESD / Transient / Surge Protection Array
1.1 Features
• ESD/Transient/Surge protection according to:
IEC61000-4-2 (ESD): ±30 kV air/contact discharge
IEC61000-4-4 (EFT): ±80 A (5/50 ns)
IEC61000-4-5 (Surge): ±20 A (8/20 μs)
• Reverse working voltage maximum: VRWM = 3.3 V
• Low leakage current: IR < 50 nA
Low capacitance: CL = 2 pF typ. (I/O to GND), 1 pF typ. (I/O to I/O)
• Low clamping voltage: VCL = 7.7 V typ. @ 20 A (8/20 μs)
• Pb-free (RoHS compliant) package
1.2 Application Examples
• 10/100/1000 Ethernet
• 4 lines uni-directional (Pin 2 to GND)
• 2 lines bi-directional (Pin 2 n.c.)
1.3 Product Description
Pin 6 Pin 5 Pin 4
Pin 5
Pin 1 Pin 3 n.c.
Pin 4
Pin 6
Pin 1 Pin 2 Pin 3
a) Pin configuration
b) Schematic diagram
Figure 1-1 Pin configuration and Schematic diagram
GND
Pin 2
TVS3V3L4U_PinConf_and_SchematicDiag1.vsd
Table 1-1 Ordering Information
Type
TVS3V3L4U
Package
SC74
FinalData Sheet
Configuration
4 lines, uni-directional or 2 lines, bidirectional
Marking code
E1s
4 Revision 2.4, 2013-02-06

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TVS3V3L4U 전자부품, 판매, 대치품
TVS3V3L4U
2.4 ESD Characteristics
Electrical Characteristics
Table 2-4 ESD Characteristics at TA = 25 °C, unless otherwise specified
Parameter
Symbo
Values
Unit Note /
l Min. Typ. Max.
Test Condition
Reverse clamping voltage1)
I/O to GND
I/O to GND
I/O to GND
I/O to GND
I/O to GND
VCL
4.2 –
4.9 –
5.8 –
6.7 –
7.7 –
V tp = 8/20 μs
IPP = 1 A
IPP = 5 A
IPP = 10 A
IPP = 15 A
IPP = 20 A
Reverse clamping voltage2)
I/O to GND
– 5.8 –
tp = 100 ns
IPP = 16 APP
Forward clamping voltage1)
GND to I/O
GND to I/O
VFC
1.1 –
4–
V tp = 8/20 μs
IPP = 1 A
IPP = 20 A
Forward clamping voltage2)
GND to I/O
– 3.1 –
tp = 100 ns
IPP = 16 A
Dynamic resistance1)
I/O to GND
RDYN
0.15 –
Ω
tp = 8/20 μs
Dynamic restiance2)
I/O to GND
– 0.09 –
tp = 100 ns
1) IPP according to IEC61000-4-5
2) Please refer to Application Note AN210 [1]. TLP parameter: Z0 = 50 Ω , tp = 100ns, tr = 300ps, averaging window: t1 = 30 ns
to t2 = 60 ns, extraction of dynamic resistance using least squares fit of TLP characteristics between IPP1 = 10 A and
IPP2 = 40 A.
FinalData Sheet
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