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PDF 18P06P Data sheet ( Hoja de datos )
| Número de pieza | 18P06P | |
| Descripción | SIPMOS Power-Transistor | |
| Fabricantes | Infineon | |
| Logotipo |  |
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SIPMOS® Power-Transistor
Features
• P-Channel
• Enhancement mode
• Avalanche rated
• dv /dt rated
• 175°C operating temperature
• Pb-free lead plating; RoHS compliant
° Halogen-free according to IEC61249-2-21
° Qualified according to AEC Q101
Product Summary
V DS
R DS(on),max
ID
SPB18P06P G
-60 V
0.13 Ω
-18.6 A
PG-TO263-3
Type
Package
SPB18P06PG PG-TO263-3
Tape and reel information
1000 pcs / reel
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
Pulsed drain current
ID
I D,pulse
T A=25 °C
T A=100 °C
T A=25 °C
Marking Lead free
18P06P Yes
Packing
Non dry
Value
steady state
-18.7
-13.2
-74.8
Unit
A
Avalanche energy, single pulse
E AS I D=18.7 A, R GS=25 Ω
151 mJ
Avalanche energy, periodic limited by
Tjmax
E AR
Reverse diode dv /dt
dv /dt
I D=18.7 A, V DS=48 V,
di /dt =-200 A/µs,
T j,max=175 °C
Gate source voltage
V GS
Power dissipation
P tot T A=25 °C
Operating and storage temperature T j, T stg
ESD class
Soldering temperature
IEC climatic category; DIN IEC 68-1
8
-6
±20
81.1
"-55 ... +175"
260 °C
55/175/56
kV/µs
V
W
°C
Rev 1.6
page 1
2012-09-07
1 page  
5 Typ. output characteristics
I D=f(V DS); T j=25 °C
parameter: V GS
25
-20V
-10 V
-7V
20
-6 V
15
-5.5 V
10
-5 V
5 -4.5 V
-4 V
0
0123
-V DS [V]
7 Typ. transfer characteristics
I D=f(V GS); |V DS|>2|I D|R DS(on)max
parameter: T j
4
SPB18P06P G
6 Typ. drain-source on resistance
R DS(on)=f(I D); T j=25 °C
parameter: V GS
500
450
400
-4 V
350
300
250
200
-4.5 V
-5 V
-5.5 V
-6 V
150 -7 V
100 -10 V
-20 V
50
0
5 0 5 10 15 20 25 30 35
-I D [A]
8 Typ. forward transconductance
g fs=f(I D); T j=25 °C
14 14
12 12
10 10
88
66
44
125 °C
2
25 °C
2
Rev 1.6
0
0123456
-V GS [V]
0
0
page 5
5 10 15
-I D [A]
20
2012-09-07
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet 18P06P.PDF ] | |
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