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부품번호 H02N60SJ
기능 N-Channel Power Field Effect Transistor
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H02N60SJ 데이터시트, 핀배열, 회로
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : MOS200504
Issued Date : 2005.05.01
Revised Date : 2005.09.28
Page No. : 1/6
H02N60S Series
N-Channel Power Field Effect Transistor
Description
This high voltage MOSFET uses an advanced termination scheme to
provide enhanced voltage-blocking capability without degratding
performance over time. In addition, this advanced MOSFET is designed to
withstand high energy in avalanche and commutation modes. The new
energy efficient design also offers a drain-to-source diode with a fast
recovery time. Designed for high voltage, high speed switching
applications in power supplies, converters and PWM motor controls,
these devices are particularly well suited for bridge circuits where diode
speed and commutating safe operating areas are critical and offer
additional and saafety margin against unexpected voltage transients.
Features
Robust High Voltage Termination
Avalanc he Energy Specified
Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast
Recovery Diode
Diode is Characterized for Use in Bridge Circuits
IDSS and VDS(on) Specified at Elevated Temperature
Absolute Maximum Ratings
H02N60S Series Pin Assignment
Tab
3
2
1
Tab
3
2
Tab 1
3-Lead Plastic TO-252
Package Code: J
Pin 1: Gate
Pin 2 & Tab: Drain
Pin 3: Source
3-Lead Plastic TO-251
Package Code: I
Pin 1: Gate
Pin 2 & Tab: Drain
Pin 3: Source
3-Lead Plastic TO-220AB
Package Code: E
Pin 1: Gate
Pin 2 & Tab: Drain
Pin 3: Source
3
2
1
3-Lead Plastic TO-220FP
Package Code: F
Pin 1: Gate
Pin 2: Drain
Pin 3: Source
3
2
1
D
H02N60S Series
Symbol:
G
S
Symbol
ID
IDM
VGS
PD
Tj, Tstg
EAS
TL
Parameter
Drain to Current (Continuous)
Drain to Current (Pulsed)
Gate-to-Source Voltage (Continue)
Total Power Dissipation (TC=25oC)
H02N60SI (TO-251) / H02N60SJ (TO-252)
H02N60SE (TO-220AB)
H02N60SF (TO-220FP)
Derate above 25°C
H02N60SI (TO-251) / H02N60SJ (TO-252)
H02N60SE (TO-220AB)
H02N60SF (TO-220FP)
Operating and Storage Temperature Range
Single Pulse Drain-to-Source Avalanche Enrgy-Tj=25°C
(VDD=100V, VGS=10V, IL=2A, L=10mH, RG=25)
Maximum Lead Temperature for Soldering Purposes, 1/8”
from case for 10 seconds
Value
2
8
±30
50
50
25
0.4
0.4
0.33
-55 to 150
35
260
Units
A
A
V
W
W/°C
°C
mJ
°C
H02N60SI, H02N60SJ, H02N60SE, H02N60SF
HSMC Product Specification




H02N60SJ pdf, 반도체, 판매, 대치품
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : MOS200504
Issued Date : 2005.05.01
Revised Date : 2005.09.28
Page No. : 4/6
TO-251 Dimension
AM
Tab F
C
G
123
K
H1
K1
a1
L
a1
Marking:
Pb Free Mark
Pb-Free: " . " (Note)
Normal: None
HI
0 2N6 0S
Date Code
Control Code
Note: Green label is used for pb-free packing
Pin Style: 1.Gate 2.Drain 3.Source
Material:
Lead solder plating: Sn60/Pb40 (Normal),
Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free)
Mold Compound: Epoxy resin family,
flammability solid burning class: UL94V-0
DIM Min. Max.
A 6.35 6.80
C 4.80 5.50
F 1.30 1.70
G 5.40 6.25
H1 6.75 8.00
K 0.50 0.90
K1 0.40 0.90
L 0.90 1.50
M 2.20 2.40
a1 0.40 0.65
a2 - *2.30
*: Typical, Unit: mm
3-Lead TO-251
a2 a2 Plastic Package
HSMC Package Code: I
A
B
C
DF
a1 y1
E
G
H
y1
J
K H1
K1
a2
y2
a2
y2
M
a1
I
y1
Marking:
Pb Free Mark
Pb-Free: " . " (Note)
Normal: None
HI
0 2N6 0S
Date Code
Control Code
Note: Green label is used for pb-free packing
Pin Style: 1.Gate 2.Drain 3.Source
Material:
Lead solder plating: Sn60/Pb40 (Normal),
Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free)
Mold Compound: Epoxy resin family,
flammability solid burning class: UL94V-0
a1
3-Lead TO-251
Plastic Package
HSMC Package Code: I
DIM Min. Max.
A 6.40 6.80
B - 6.00
C 5.04 5.64
D - *4.34
E 0.40 0.80
F 0.50 0.90
G 5.90 6.30
H - *1.80
H1 - *9.30
I - *16.10
J - *0.80
K - 0.96
K1 - *0.76
M 2.20 2.40
a1 0.40 0.60
a2 2.10 2.50
y1 - 5o
y2 - 3o
*: Typical, Unit: mm
H02N60SI, H02N60SJ, H02N60SE, H02N60SF
HSMC Product Specification

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