Datasheet.kr   

IKB06N60T 데이터시트 PDF




Infineon에서 제조한 전자 부품 IKB06N60T은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


 

PDF 형식의 IKB06N60T 자료 제공

부품번호 IKB06N60T 기능
기능 IGBT ( Insulated Gate Bipolar Transistor )
제조업체 Infineon
로고 Infineon 로고


IKB06N60T 데이터시트 를 다운로드하여 반도체의 전기적 특성과 매개변수에 대해 알아보세요.




전체 13 페이지수

미리보기를 사용할 수 없습니다

IKB06N60T 데이터시트, 핀배열, 회로
TRENCHSTOPSeries
IKB06N60T
p
Low Loss DuoPack : IGBT in TRENCHSTOPand Fieldstop technology with soft,
fast recovery anti-parallel Emitter Controlled HE diode
Features
Very low VCE(sat) 1.5V (typ.)
Maximum Junction Temperature 175°C
Short circuit withstand time 5s
Designed for frequency inverters for washing machines, fans, pumps and
vacuum cleaners
TRENCHSTOPand Fieldstop technology for 600V applications offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
- very high switching speed
Low EMI
Qualified according to JEDEC1 for target applications
Pb-free lead plating; RoHS compliant
Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
Type
IKB06N60T
VCE
600V
IC;Tc=100°C VCE(sat),Tj=25°C Tj,max
6A
1.5V
175C
Marking
K06T60
C
G
E
PG-TO263-3
Package
PG-TO263-3
Maximum Ratings
Parameter
Collector-emitter voltage, Tj ≥ 25C
DC collector current, limited by Tjmax
TC = 25C
TC = 100C
Pulsed collector current, tp limited by Tjmax
Turn off safe operating area, VCE = 600V, Tj = 175C, tp = 1µs
Diode forward current, limited by Tjmax
TC = 25C
TC = 100C
Diode pulsed current, tp limited by Tjmax
Gate-emitter voltage
Short circuit withstand time2)
VGE = 15V, VCC 400V, Tj 150C
Power dissipation
TC = 25C
Operating junction temperature
Storage temperature
Soldering temperature (reflow soldering, MSL1)
Symbol
VCE
IC
ICpuls
-
IF
IFpuls
VGE
tSC
Ptot
Tj
Tstg
Value
600
12
6
18
18
12
6
18
20
5
88
-40...+175
-55...+150
260
Unit
V
A
V
s
W
C
1 J-STD-020 and JESD-022
2) Allowed number of short circuits: <1000; time between short circuits: >1s.
IFAG IPC TD VLS
1
Rev. 2.5 20.09.2013




IKB06N60T pdf, 반도체, 판매, 대치품
TRENCHSTOPSeries
IKB06N60T
p
18A
15A
12A
9A
TC=80°C
TC=110°C
6A Ic
3A Ic
0A
100Hz
1kHz
10kHz
100kHz
f, SWITCHING FREQUENCY
Figure 1. Collector current as a function of
switching frequency
(Tj 175C, D = 0.5, VCE = 400V,
VGE = 0/15V, rG = 23)
10A
tp=1µs
5µs
10µs
1A 50µs
500µs
0,1A
1V
5ms
DC
10V
100V
1000V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 2. Safe operating area
(D = 0, TC = 25C,
Tj 175C;VGE=0/15V)
80W
15A
60W
40W
20W
10A
5A
0W
25°C 50°C 75°C 100°C 125°C 150°C
Figure 3.
TC, CASE TEMPERATURE
Power dissipation as a function of
case temperature
(Tj 175C)
0A
25°C
75°C
125°C
Figure 4.
TC, CASE TEMPERATURE
Collector current as a function of
case temperature
(VGE 15V, Tj 175C)
IFAG IPC TD VLS
4
Rev. 2.5 20.09.2013

4페이지










IKB06N60T 전자부품, 판매, 대치품
TRENCHSTOPSeries
IKB06N60T
p
0,6 mJ
*) Eon and Ets include losses
due to diode recovery
0,5 mJ
Ets*
0,4 mJ
0,3 mJ
0,2 mJ
0,1 mJ
Eoff
Eon*
0,0 mJ 0A 2A 4A 6A 8A 10A
IC, COLLECTOR CURRENT
Figure 13. Typical switching energy losses
as a function of collector current
(inductive load, TJ=175°C,
VCE=400V, VGE=0/15V, rG=23Ω,
Dynamic test circuit in Figure E)
0,4 mJ
*) Eon and Ets include losses
due to diode recovery
Ets*
0,3 mJ
0,2 mJ
0,1 mJ
Eon*
Eoff
0,0 mJ
   
RG, GATE RESISTOR
Figure 14. Typical switching energy losses
as a function of gate resistor
(inductive load, TJ=175°C,
VCE = 400V, VGE = 0/15V, IC = 6A,
Dynamic test circuit in Figure E)
0,4mJ
*) Eon and Ets include losses
due to diode recovery
0,3mJ
Ets*
0,2mJ
E off
0,1mJ
E on*
0,0mJ
50°C
100°C
150°C
TJ, JUNCTION TEMPERATURE
Figure 15. Typical switching energy losses
as a function of junction
temperature
(inductive load, VCE=400V,
VGE = 0/15V, IC = 6A, rG = 23Ω,
Dynamic test circuit in Figure E)
0 ,5m J
*) Eon and Ets include losses
due to diode recovery
0 ,4m J
E ts*
0 ,3m J
0 ,2m J
0 ,1m J
E off
Eon*
0 ,0m J
200V
300V
400V
500V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 16. Typical switching energy losses
as a function of collector emitter
voltage
(inductive load, TJ = 175°C,
VGE = 0/15V, IC = 6A, rG = 23Ω,
Dynamic test circuit in Figure E)
IFAG IPC TD VLS
7
Rev. 2.5 20.09.2013

7페이지


구       성 총 13 페이지수
다운로드[ IKB06N60T.PDF 데이터시트 ]

당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는

포괄적인 데이터시트를 제공합니다.


구매 문의
일반 IC 문의 : 샘플 및 소량 구매
-----------------------------------------------------------------------

IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한
광범위한 전력 반도체를 판매합니다.

전력 반도체 전문업체

상호 : 아이지 인터내셔날

사이트 방문 :     [ 홈페이지 ]     [ 블로그 1 ]     [ 블로그 2 ]



관련 데이터시트

부품번호상세설명 및 기능제조사
IKB06N60T

IGBT ( Insulated Gate Bipolar Transistor )

Infineon
Infineon

DataSheet.kr       |      2020   |     연락처      |     링크모음      |      검색     |      사이트맵