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부품번호 | IKP04N60T 기능 |
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기능 | IGBT ( Insulated Gate Bipolar Transistor ) | ||
제조업체 | Infineon | ||
로고 | |||
전체 13 페이지수
IKP04N60T
TRENCHSTOPTM Series
q
Low Loss DuoPack : IGBT in TRENCHSTOPTM and Fieldstop technology
with soft, fast recovery anti-parallel Emitter Controlled HE diode
• Very low VCE(sat) 1.5V (typ.)
• Maximum Junction Temperature 175°C
• Short circuit withstand time 5µs
• Designed for:
- Frequency Converters
- Drives
• TRENCHSTOPTM and Fieldstop technology for 600V applications offers:
- very tight parameter distribution
- high ruggedness, temperature stable behavior
- very high switching speed
- low VCE(sat)
• Positive temperature coefficient in VCE(sat)
• Low EMI
• Low Gate Charge
• Very soft, fast recovery anti-parallel Emitter Controlled HE diode
• Qualified according to JEDEC1) for target applications
• Pb-free lead plating; RoHS compliant
• Complete product spectrum and PSpice Models: http://www.infineon.com/igbt/
C
G
E
Type
IKP04N60T
VCE
600V
IC
VCE(sat),Tj=25°C
Tj,max
4A
1.5V
175°C
Marking
K04T60
Package
PG-TO220-3
Maximum Ratings
Parameter
Collector-emitter voltage, Tj ≥ 25°C
DC collector current, limited by Tjmax
TC = 25°C
TC = 100°C
Pulsed collector current, tp limited by Tjmax
Turn off safe operating area, VCE = 600V, Tj = 175°C, tp = 1µs
Diode forward current, limited by Tjmax
TC = 25°C
TC = 100°C
Diode pulsed current, tp limited by Tjmax
Gate-emitter voltage
Short circuit withstand time2)
VGE = 15V, VCC ≤ 400V, Tj ≤ 150°C
Power dissipation TC = 25°C
Operating junction temperature
Storage temperature
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
Symbol
VCE
IC
ICpuls
-
IF
IFpuls
VGE
tSC
Ptot
Tj
Tstg
-
1) J-STD-020 and JESD-022
2) Allowed number of short circuits: <1000; time between short circuits: >1s.
Value
600
9.5
6.5
12
12
9.5
6.5
12
±20
5
42
-40...+175
-55...+150
260
Unit
V
A
V
µs
W
°C
IFAG IPC TD VLS
1
Rev. 2.8 17.02.2016
IKP04N60T
TRENCHSTOPTM Series
q
12A
10A
8A
6A
T =80°C
C
TC=110°C
4A Ic
2A
0A
10Hz
Ic
100Hz
1kHz
10kHz 100kHz
f, SWITCHING FREQUENCY
Figure 1. Collector current as a function of
switching frequency
(Tj ≤ 175°C, D = 0.5, VCE = 400V,
VGE = 0/15V, RG = 47Ω)
10A
tp=2µs
10µs
1A
50µs
0.1A
1V
1ms
DC
10ms
10V
100V
1000V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 2. Safe operating area
(D = 0, TC = 25°C, Tj ≤175°C;
VGE=0/15V)
40W
8A
30W
6A
20W
4A
10W
2A
0W
25°C 50°C 75°C 100°C 125°C 150°C
Figure 3.
TC, CASE TEMPERATURE
Power dissipation as a function of
case temperature
(Tj ≤ 175°C)
0A
25°C
75°C
125°C
TC, CASE TEMPERATURE
Figure 4. Collector current as a function of
case temperature
(VGE ≥ 15V, Tj ≤ 175°C)
IFAG IPC TD VLS
4
Rev. 2.8 17.02.2016
4페이지 *) Eon and Etsinclude losses
due to diode recovery
0.3m J
0.2m J
0.1m J
IKP04N60T
TRENCHSTOPTM Series
q
*) Eon and Ets include losses
due to diode recovery
E ts* 0.4 mJ
E*
ts
E off 0.3 mJ
Eoff
0.2 mJ
E on*
0.1 mJ
Eon*
0.0m J
0A 2A 4A 6A
IC, COLLECTOR CURRENT
Figure 13. Typical switching energy losses
as a function of collector current
(inductive load, TJ = 175°C,
VCE = 400V, VGE = 0/15V, RG = 47Ω,
Dynamic test circuit in Figure E)
0.0 mJ
25Ω 50Ω
100Ω
150Ω 200Ω
250Ω
RG, GATE RESISTOR
Figure 14. Typical switching energy losses
as a function of gate resistor
(inductive load, TJ = 175°C,
VCE = 400V, VGE = 0/15V, IC = 4A,
Dynamic test circuit in Figure E)
*) Eon and Ets include losses
175µJ
due to diode recovery
150µJ
125µJ Ets*
100µJ
75µJ
50µJ
E off
E on*
25µJ
0µJ
25°C 50°C 75°C 100°C 125°C 150°C
TJ, JUNCTION TEMPERATURE
Figure 15. Typical switching energy losses
as a function of junction
temperature
(inductive load, VCE = 400V,
VGE = 0/15V, IC = 4A, RG = 47Ω,
Dynamic test circuit in Figure E)
0.25m J
*) Eon and Ets include losses
due to diode recovery
0.20m J
Ets*
0.15m J
0.10m J Eoff
0.05m J
Eon*
0.00m J
300V
350V
400V
450V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 16. Typical switching energy losses
as a function of collector emitter
voltage
(inductive load, TJ = 175°C,
VGE = 0/15V, IC = 4A, RG = 47Ω,
Dynamic test circuit in Figure E)
IFAG IPC TD VLS
7
Rev. 2.8 17.02.2016
7페이지 | |||
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부품번호 | 상세설명 및 기능 | 제조사 |
IKP04N60T | IGBT ( Insulated Gate Bipolar Transistor ) | Infineon |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |