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Número de pieza | HWL23NPB | |
Descripción | L-Band GaAS Power FET | |
Fabricantes | Hexawave | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de HWL23NPB (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
No Preview Available ! Features
• Plastic Packaged GaAs Power FET
• Suitable for Commercial Wireless
Applications
• High Efficiency
• 3V to 6V Operation
Description
The HWL23NPB is a medium Power GaAs FET
using surface mount type plastic package for
various L-Band applications. It is suitable for
various 900 MHz, 1900 MHz cellular/wireless
applications.
HWL23NPB
L-Band GaAS Power FET
Autumn 2002 V1
Outline Dimensions
1
23
Pin 1: Source
Pin 2: Gate
Pin 3: Drain
Absolute Maximum Ratings
VDS Drain to Source Voltage
+7V
VGS Gate to Source Voltage
-5V
ID Drain Current
IDSS
IG Gate Current
1mA
TCH Channel Temperature
150°C
TSTG Storage Temperature
-65 to +150°C
PT Power Dissipation
0.7 Watt
PB Package (SOT-23)
Electrical Specifications (TA=25°C) f=1900 MHz for all RF Tests
Symbol
Parameters & Conditions
Units
Min.
IDSS Saturated Current at VDS=5V, VGS=0V
mA 90
VP Pinch-off Voltage at VDS=5V, ID=5.5mA
V -3.5
gm Transconductance at VDS=5V, ID=55mA
mS -
Rth Thermal Resistance
°C/W
-
P1dB
G1dB
Power Output at Test Points
VDS=3V, ID=0.5IDSS
VDS=5V, ID=0.5IDSS
Gain at 1dB Compression Point
VDS=3V, ID=0.5IDSS
VDS=5V, ID=0.5IDSS
dBm
dB
16.5
19.5
PAE
Power-Added Efficiency (POUT = P1dB)
VDS=3V, ID=0.5IDSS
VDS=5V, ID=0.5IDSS
%-
-
Typ.
110
-2.0
60
200
17.5
21.0
13.0
14.0
35.0
45.0
Max.
-
-1.5
-
-
-
-
-
-
-
-
Hexawave Inc. 2 Prosperity Road II, Science Park, Hsinchu, Taiwan, R.O.C.. TEL 886-3-578-5100 FAX 886-3-577-0512
http://www.hw.com.tw Email: [email protected] All specifications are subject to change without notice.
1 page HWL23NPB
L-Band GaAS Power FET
Autumn 2002 V1
Output Power & Efficiency & Gain vs Frequency
@ Vds=3V, Ids=55mA
Po (dBm)
25
PAE (%)
60
20
15
Gain
10
50
40 Po
Gain
30 PAE
20
10
50
0.7 0.8 0.9 1.0 1.1 f (GHz)
Output Power & Efficiency & Gain vs Frequency
@ Vds=5V, Ids=55mA
Po (dBm)
25
PAE (%)
60
50
20
40
15
Gain
10
30
20
10
50
1.6 1.7 1.8 1.9 2.0 2.1 f (GHz)
Po
Gain
PAE
Hexawave Inc. 2 Prosperity Road II, Science Park, Hsinchu, Taiwan, R.O.C.. TEL 886-3-578-5100 FAX 886-3-577-0512
http://www.hw.com.tw Email: [email protected] All specifications are subject to change without notice.
5 Page |
Páginas | Total 7 Páginas | |
PDF Descargar | [ Datasheet HWL23NPB.PDF ] |
Número de pieza | Descripción | Fabricantes |
HWL23NPB | L-Band GaAS Power FET | Hexawave |
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