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PDF HWL30YRA Data sheet ( Hoja de datos )
| Número de pieza | HWL30YRA | |
| Descripción | L-Band GaAs Power FET | |
| Fabricantes | Hexawave | |
| Logotipo |  |
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Features
• Low Cost GaAs Power FET
• Class A or Class AB Operation
• Typical 16.5 dB Gain
• 5V to 10V Operation
Description
The HWL30YRA is a Medium Power GaAs FET
designed for various L-band & S-band applications.
It is presently offered in low cost ceramic package.
HWL30YRA
L-Band GaAs Power FET
Autumn 2002 V1
Outline Dimensions
Absolute Maximum Ratings
VDS Drain to Source Voltage
VGS Gate to Source Voltage
ID Drain Current
IG Gate Current
TCH Channel Temperature
TSTG
PT*
Storage Temperature
Power Dissipation
* mounted on an infinite heat sink.
+15V
-5V
IDSS
3 mA
175°C
-65 to +175°C
6W
RA Package (Ceramic)
Electrical Specifications (TA=25°C) f = 2400 MHz for all RF Tests
Symbol
IDSS
VP
gm
Rth
P1dB
G1dB
PAE
Parameters & Conditions
Saturated Current at VDS=3V, VGS=0V
Pinch-off Voltage at VDS=3V, ID=30mA
Transconductance at VDS=3V, ID=300mA
Thermal Resistance
Power Output at Test Points
VDS=10V, ID=0.5IDSS
Gain at 1dB Compression Point
VDS=10V, ID=0.5IDSS
Power-Added Efficiency (POUT = P1dB)
VDS=10V, ID=0.5IDSS
Units
mA
V
mS
°C/W
dBm
dB
%
Min.
500
-3.5
-
-
30
15
35
Typ.
600
-2.0
300
15
31
16.5
45
Max.
900
-1.5
-
25
-
-
-
Hexawave Inc. 2 Prosperity Road II, Science Park, Hsinchu, Taiwan, R.O.C.. TEL 886-3-578-5100 FAX 886-3-577-0512
http://www.hw.com.tw Email: [email protected] All specifications are subject to change without notice.
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet HWL30YRA.PDF ] | |
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