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PDF FDD86102LZ Data sheet ( Hoja de datos )
| Número de pieza | FDD86102LZ | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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FDD86102LZ
N-Channel PowerTrench® MOSFET
100 V, 35 A, 22.5 mΩ
Features
General Description
August 2012
Max rDS(on) = 22.5 mΩ at VGS = 10 V, ID = 8 A
Max rDS(on) = 31 mΩ at VGS = 4.5 V, ID = 7 A
HBM ESD protection level > 6 kV typical (Note 4)
Very low Qg and Qgd compared to competing trench
technologies
Fast switching speed
100% UIL tested
RoHS Compliant
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced PowerTrench® process that has
been especially tailored to minimize the on-state resistance and
switching loss. G-S zener has been added to enhance ESD
voltage level.
Applications
DC - DC Conversion
Inverter
Synchronous Rectifier
D
D
G
S
DTO-P-2A5K2
(TO-252)
G
S
MOSFET Maximum Ratings TC = 25 °C unless otherwise noted
Symbol
VDS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
-Continuous (Silicon limited)
-Continuous
-Pulsed
TC = 25 °C
TC = 25 °C
TA = 25 °C
Single Pulse Avalanche Energy
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 3)
(Note 1a)
Ratings
100
±20
42
35
8
40
84
54
3.1
-55 to +150
Units
V
V
A
mJ
W
°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
2.3
40
°C/W
Device Marking
FDD86102LZ
Device
FDD86102LZ
Package
D-PAK(TO-252)
Reel Size
13 ’’
Tape Width
12 mm
Quantity
2500 units
©2012 Fairchild Semiconductor Corporation
FDD86102LZ Rev.C1
1
www.fairchildsemi.com
1 page  
Typical Characteristics TJ = 25 °C unless otherwise noted
10000
1000
100
10
10-5
SINGLE PULSE
RθJC = 2.3 oC/W
TC = 25 oC
10-4
10-3
10-2
t, PULSE WIDTH (sec)
Figure 13. Single Pulse Maximum Power Dissipation
10-1
2
DUTY CYCLE-DESCENDING ORDER
1
D = 0.5
0.2
0.1
0.05
0.1
0.02
0.01
PDM
0.01
0.005
10-5
SINGLE PULSE
RθJC = 2.3 oC/W
10-4
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC x RθJc + TC
10-3
10-2
t, RECTANGULAR PULSE DURATION (sec)
10-1
Figure 14. Junction-to-Case Transient Thermal Response Curve
1
1
©2012 Fairchild Semiconductor Corporation
FDD86102LZ Rev.C1
5
www.fairchildsemi.com
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