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부품번호 | FDD86326 기능 |
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기능 | MOSFET ( Transistor ) | ||
제조업체 | Fairchild Semiconductor | ||
로고 | |||
전체 6 페이지수
May 2013
FDD86326
N-Channel Shielded Gate PowerTrench® MOSFET
80 V, 37 A, 23 m:
Features
General Description
Shielded Gate MOSFET Technology
Max rDS(on) = 23 m: at VGS = 10 V, ID = 8 A
Max rDS(on) = 37 m: at VGS = 6 V, ID = 4.6 A
High performance trench technology for extremely low rDS(on)
High power and current handling capability in a widely used
surface mount package
Very low Qg and Qgd compared to competing trench
technologies
This N-Channel MOSFET is produced using Fairchild
Semiconductor‘s advanced PowerTrench® process that
incorporates Shielded Gate technology. This process has been
optimized for rDS(on), switching performance and ruggedness.
Application
DC - DC Conversion
Fast switching speed
100% UIL tested
RoHS Compliant
D
D
G
S
DT O-P-2A5K2
(T O -25 2)
G
S
MOSFET Maximum Ratings TC = 25 °C unless otherwise noted
Symbol
VDS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Continuous
-Pulsed
TC = 25 °C
TA = 25 °C
Single Pulse Avalanche Energy
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 3)
(Note 1a)
Ratings
80
±20
37
8
40
121
62
3.1
-55 to +150
Units
V
V
A
mJ
W
°C
RTJC
RTJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
Device Marking
FDD86326
Device
FDD86326
Package
D-PAK(TO-252)
(Note 1a)
2.0
40
°C/W
Reel Size
13 ’’
Tape Width
12 mm
Quantity
2500 units
©2010 Fairchild Semiconductor Corporation
FDD86326 Rev.C2
1
www.fairchildsemi.com
Typical Characteristics TJ = 25 °C unless otherwise noted
10
ID = 8 A
8
6
4
VDD = 25 V
VDD = 50 V
VDD = 75 V
1000
100
Ciss
Coss
2
0
0 3 6 9 12
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics
15
9
8
7
6
5
4 TJ = 25 oC
3
TJ = 125 oC
TJ = 100 oC
2
1
0.01
0.1 1
tAV, TIME IN AVALANCHE (ms)
Figure9. UnclampedInductive
Switching Capability
10
30
f = 1 MHz
VGS = 0 V
10
0.1
1
Crss
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure8. CapacitancevsDrain
to Source Voltage
40
80
30
20 VGS = 10 V
VGS = 4.5 V
10
RTJC = 2 oC/W
0
25 50 75 100 125
Tc, CASE TEMPERATURE (oC)
Figure 10. Maximum Continuous Drain
Current vs Case Temperature
150
100
10 100 us
THIS AREA IS
LIMITED BY rDS(on)
1 SINGLE PULSE
TJ = MAX RATED
RTJC = 2 oC/W
TC = 25 oC
0.1
1
10
1 ms
10 ms
100 ms
DC
100 200
VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 11. Forward Bias Safe
Operating Area
10000
VGS = 10 V
1000
SINGLE PULSE
RTJC = 2 oC/W
TC = 25 oC
100
50
10-5
10-4
10-3
10-2
10-1
t, PULSE WIDTH (sec)
1
Figure 12. Single Pulse Maximum
Power Dissipation
10
©2010 Fairchild Semiconductor Corporation
FDD86326 Rev.C2
4
www.fairchildsemi.com
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부품번호 | 상세설명 및 기능 | 제조사 |
FDD86326 | MOSFET ( Transistor ) | Fairchild Semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |