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Número de pieza | FDD86540 | |
Descripción | MOSFET ( Transistor ) | |
Fabricantes | Fairchild Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de FDD86540 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
No Preview Available ! FDD86540
N-Channel PowerTrench® MOSFET
60 V, 50 A, 4.1 mΩ
February 2012
Features
General Description
Max rDS(on) = 4.1 mΩ at VGS = 10 V, ID = 21.5 A
Max rDS(on) = 5 mΩ at VGS = 8 V, ID = 19.5 A
100% UIL tested
RoHS Compliant
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency and to minimize switch node
ringing of DC/DC converters using either synchronous or
conventional switching PWM controllers.It has been optimized
for low gate charge, low rDS(on), fast switching speed and body
diode reverse recovery performance.
Applications
Primary Switch in isolated DC-DC
Synchronous Rectifier
Load Switch
D
D
G
S
DT O-P-2A5K2
(T O -25 2)
G
S
MOSFET Maximum Ratings TC = 25 °C unless otherwise noted
Symbol
VDS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
-Continuous (Silicon limited)
-Continuous
-Pulsed
TC = 25 °C
TC = 25 °C
TA = 25 °C
Single Pulse Avalanche Energy
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 3)
(Note 1a)
Ratings
60
±20
50
136
21.5
120
228
127
3.1
-55 to +150
Units
V
V
A
mJ
W
°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
0.98
40
°C/W
Device Marking
FDD86540
Device
FDD86540
Package
D-PAK(TO-252)
Reel Size
13 ’’
Tape Width
12 mm
Quantity
2500 units
©2012 Fairchild Semiconductor Corporation
FDD86540 Rev. C
1
www.fairchildsemi.com
1 page Typical Characteristics TJ = 25 °C unless otherwise noted
2
DUTY CYCLE-DESCENDING ORDER
1
D = 0.5
0.2
0.1
0.05
0.1 0.02
0.01
SINGLE PULSE
RθJC = 0.98 oC/W
PDM
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC x RθJC + TC
0.01
10-6
10-5
10-4
10-3
10-2
10-1
t, RECTANGULAR PULSE DURATION (sec)
Figure 13. Junction-to-Case Transient Thermal Response Curve
1
©2012 Fairchild Semiconductor Corporation
FDD86540 Rev. C
5
www.fairchildsemi.com
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet FDD86540.PDF ] |
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