|
|
|
부품번호 | F59D1G161A 기능 |
|
|
기능 | 1 Gbit (128M x 8/ 64M x 16) 1.8V NAND Flash Memory | ||
제조업체 | Elite Semiconductor | ||
로고 | |||
ESMT
Flash
FEATURES
Voltage Supply: 1.8V (1.7 V ~ 1.95V)
Organization
x8:
- Memory Cell Array: (128M + 4M) x 8bit
- Data Register: (2K + 64) x 8bit
x16:
- Memory Cell Array: (64M + 2M) x 16bit
- Data Register: (1K + 32) x 16bit
Automatic Program and Erase
x8:
- Page Program: (2K + 64) Byte
- Block Erase: (128K + 4K) Byte
x16:
- Page Program: (1K + 32) Word
- Block Erase: (64K + 2K) Word
Page Read Operation
- Page Size: (2K + 64) Byte (x8)
Page Size: (1K + 32) Word (x16)
- Random Read: 25us (Max.)
- Serial Access: 45ns (Min.)
Memory Cell: 1bit/Memory Cell
Fast Write Cycle Time
- Program time: 250us (Typ.)
- Block Erase time: 2ms (Typ.)
Command/Address/Data Multiplexed I/O Port
F59D1G81A / F59D1G161A
1 Gbit (128M x 8/ 64M x 16)
1.8V NAND Flash Memory
Hardware Data Protection
- Program/Erase Lockout During Power Transitions
Reliable CMOS Floating Gate Technology
- ECC Requirement: x8 - 1bit/528Byte,
x16 - 1bit/264Word
- Endurance: 100K Program/Erase Cycles
- Data Retention: 10 Years
Command Register Operation
Automatic Page 0 Read at Power-Up Option
- Boot from NAND support
- Automatic Memory Download
NOP: 4 cycles
Cache Program Operation for High Performance Operation
Copy-Back Operation
EDO mode
OTP Operation
No Bad-Block-Erasing-Protect function (user should manage
bad blocks before erasing)
ORDERING INFORMATION
Product ID
x8:
F59D1G81A -45TG
F59D1G81A -45BG
x16:
F59D1G161A -45BG
Speed
45 ns
45 ns
45 ns
Package
48 pin TSOPI
63 ball BGA
63 ball BGA
Comments
Pb-free
Pb-free
Pb-free
Elite Semiconductor Memory Technology Inc.
Publication Date: May 2014
Revision: 1.5
1/43
ESMT
F59D1G81A / F59D1G161A
BALL CONFIGURATION (x16) (TOP VIEW)
(BGA 63 BALL, 9mm X 11mm Body, 0.8 Ball Pitch)
1 2 3 4 5 6 7 8 9 10
A NC NC
NC NC
B NC
NC NC
C WP ALE VSS CE WE R / B
D NC RE CLE NC NC NC
E NC NC NC NC NC NC
F NC NC NC NC NC NC
G NC NC NC I/O13 I/O15 NC
H I/O8 I/O0 I/O10 I/O12 I/O14 VCC
J I/O9 I/O1 I/O11 VCC I/O5 I/O7
K VSS I/O2 I/O3 I/O4 I/O6 VSS
L NC NC
NC NC
M NC NC
NC NC
Elite Semiconductor Memory Technology Inc.
Publication Date: May 2014
Revision: 1.5
4/43
4페이지 ESMT
BLOCK DIAGRAM (x16)
F59D1G81A / F59D1G161A
ARRAY ORGANIZATION (x16)
Address Cycle Map (x16)
I/O0 I/O1 I/O2 I/O3 I/O4 I/O5 I/O6
1st cycle
A0
A1
A2
A3
A4
A5
A6
2nd cycle A8
A9 A10
L*
L*
L*
L*
3rd cycle A11 A12 A13 A14 A15 A16 A17
4th cycle A19 A20 A21 A22 A23 A24 A25
Note:
Column Address: Starting Address of the Register.
*L must be set to “Low”.
* The device ignores any additional input of address cycles than required.
I/O7 I/O8~I/O15
A7 L*
L* L*
A18 L*
A26 L*
Column Address
Column Address
Row Address
Row Address
Elite Semiconductor Memory Technology Inc.
Publication Date: May 2014
Revision: 1.5
7/43
7페이지 | |||
구 성 | 총 30 페이지수 | ||
다운로드 | [ F59D1G161A.PDF 데이터시트 ] |
당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는 |
구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
F59D1G161A | 1 Gbit (128M x 8/ 64M x 16) 1.8V NAND Flash Memory | Elite Semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |