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부품번호 | BAS21AW 기능 |
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기능 | High-voltage switching diodes | ||
제조업체 | NXP Semiconductors | ||
로고 | |||
전체 11 페이지수
BAS21W series
High-voltage switching diodes
Rev. 01 — 9 October 2009
Product data sheet
1. Product profile
1.1 General description
High-voltage switching diodes, encapsulated in a very small Surface-Mounted
Device (SMD) plastic package.
Table 1. Product overview
Type number
Configuration
BAS21W
BAS21AW
BAS21SW
single
dual common anode
dual series
Package
NXP
SOT323
JEDEC
SC-70
Package
configuration
very small
1.2 Features
I High switching speed: trr ≤ 50 ns
I Low leakage current
I High reverse voltage: VR ≤ 250 V
I Low capacitance: Cd ≤ 2 pF
I Very small SMD plastic package
I AEC-Q101 qualified
1.3 Applications
I High-speed switching
I General-purpose switching
I Voltage clamping
I Reverse polarity protection
1.4 Quick reference data
Table 2. Quick reference data
Symbol Parameter
Per diode
IF forward current
IR reverse current
VR reverse voltage
trr reverse recovery time
Conditions
VR = 200 V
Min Typ
[1] -
-
-
[2] -
-
-
-
-
[1] Single diode loaded.
[2] When switched from IF = 10 mA to IR = 10 mA; RL = 100 Ω; measured at IR = 1 mA.
Max
225
100
250
50
Unit
mA
nA
V
ns
NXP Semiconductors
BAS21W series
High-voltage switching diodes
6. Thermal characteristics
Table 7. Thermal characteristics
Symbol Parameter
Per device
Rth(j-a)
thermal resistance from
junction to ambient
Rth(j-sp)
thermal resistance from
junction to solder point
Conditions
in free air
Min Typ Max Unit
[1] - - 625 K/W
- - 300 K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
7. Characteristics
Table 8. Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Per diode
VF forward voltage
IF = 100 mA
IF = 200 mA
IR reverse current
VR = 200 V
VR = 200 V; Tj = 150 °C
Cd
diode capacitance
f = 1 MHz; VR = 0 V
trr reverse recovery time
Min Typ
--
--
--
--
--
[1] -
-
[1] When switched from IF = 10 mA to IR = 10 mA; RL = 100 Ω; measured at IR = 1 mA.
Max Unit
1.0 V
1.25 V
100 nA
100 µA
2 pF
50 ns
BAS21W_SER_1
Product data sheet
Rev. 01 — 9 October 2009
© NXP B.V. 2009. All rights reserved.
4 of 11
4페이지 NXP Semiconductors
9. Package outline
BAS21W series
High-voltage switching diodes
2.2 1.35
2.0 1.15
2.2
1.8
3
0.45
0.15
1.1
0.8
1
Dimensions in mm
1.3
Fig 7. Package outline SOT323 (SC-70)
2
0.4
0.3
0.25
0.10
04-11-04
10. Packing information
Table 9. Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.[1]
Type number Package Description
BAS21W
BAS21AW
BAS21SW
SOT323 4 mm pitch, 8 mm tape and reel
Packing quantity
3 000
10 000
-115
-135
[1] For further information and the availability of packing methods, see Section 14.
BAS21W_SER_1
Product data sheet
Rev. 01 — 9 October 2009
© NXP B.V. 2009. All rights reserved.
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