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부품번호 | IRL1004PBF 기능 |
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기능 | Power MOSFET ( Transistor ) | ||
제조업체 | International Rectifier | ||
로고 | |||
전체 9 페이지수
l Logic-Level Gate Drive
l Advanced Process Technology
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
l Lead-Free
Description
Fifth Generation HEXFET® power MOSFETs from
International Rectifier utilize advanced processing techniques
to achieve the lowest possible on-resistance per silicon
area. This benefit, combined with the fast switching speed
and ruggedized device design that HEXFET power MOSFETs
are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of
applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation levels
to approximately 50 watts. The low thermal resistance and
low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
Thermal Resistance
RθJC
RθCS
RqJA
www.irf.com
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
G
PD - 95403
IRL1004PbF
HEXFET® Power MOSFET
D VDSS = 40V
RDS(on) = 0.0065Ω
ID = 130A
S
TO-220AB
Max.
130
92
520
200
1.3
± 16
700
78
20
5.0
-55 to + 175
300 (1.6mm from case)
10 lbf•in (1.1N•m)
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Typ.
–––
0.50
–––
Max.
0.75
–––
62
Units
°C/W
1
6/17/04
IRL1004PbF
10000
8000
6000
4000
VCCCGirossssSss
=
=
=
=
0V,
CCCggdsds
+
+
f = 1MHz
Cgd , Cds
Cgd
SHORTED
Ciss
Coss
2000
0
1
Crss
10
VDS , Drain-to-Source Voltage (V)
100
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
12 ID = 78 A
10
VVDDSS
=
=
32V
20V
8
6
4
2
FOR TEST CIRCUIT
SEE FIGURE 13
0
0 30 60 90 120 150 180
QG , Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
100 TJ = 175°C
10
TJ = 25 °C
1
0.1
0.0
VGS = 0 V
0.5 1.0 1.5 2.0 2.5
VSD ,Source-to-Drain Voltage (V)
3.0
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
10000
1000
OPERATION IN THIS AREA LIMITED
BY RDS(on)
10us
100 100us
1ms
10 10ms
TC
TJ
=
=
25 °C
175 ° C
Single Pulse
1
1
10
VDS , Drain-to-Source Voltage (V)
100
Fig 8. Maximum Safe Operating Area
www.irf.com
4페이지 IRL1004PbF
D.U.T
+
-
RG
Peak Diode Recovery dv/dt Test Circuit
+ Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
- +
• dv/dt controlled by RG
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
+
- VDD
Driver Gate Drive
P.W.
Period
D=
P.W.
Period
VGS=10V *
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
Inductor Curent
Forward Drop
VDD
Ripple ≤ 5%
ISD
* VGS = 5V for Logic Level Devices
Fig 14. For N-Channel HEXFET® Power MOSFETs
www.irf.com
7
7페이지 | |||
구 성 | 총 9 페이지수 | ||
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부품번호 | 상세설명 및 기능 | 제조사 |
IRL1004PBF | Power MOSFET ( Transistor ) | International Rectifier |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |