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부품번호 | MGA-665P8 기능 |
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기능 | Low Noise Amplifier | ||
제조업체 | AVAGO | ||
로고 | |||
전체 13 페이지수
MGA-665P8
GaAs Enhancement-Mode PHEMT
0.5 – 6 GHz Low Noise Amplifier
Data Sheet
Description
Avago’s MGA-665P8 is an economical, easy-to-use
GaAs MMIC Low Noise Amplifier (LNA) with a unique
active-low power-down function. The LNA has low
noise figure and high gain achieved through the use of
Avago Technologies’ proprietary GaAs Enhancement-
mode PHEMT process. It is housed in a miniature 2.0 x
2.0 x 0.75 mm 8-pin Leadless-Plastic-Chip-Carrier (LPCC)
package. The compact footprint and low profile coupled
with low noise, high gain and high linearity makes the
MGA-665P8 an ideal choice as an LNA for broadband
general-purpose applications. Its excellent broadband
isolation also makes it a good buffer amplifier.
The output of the MGA-665P8 provides a very good
broadband match to 50 Ω. Its input requires a simple
external LC network to provide a low noise figure and
good input return loss. Power supply voltage is applied
to both the output terminal and a separate VD terminal.
A simple external bias insertion circuit consisting of a
shunt inductor and a series dc block capacitor is suf-
ficient to apply power supply voltage to the output of
the MGA-665P8. The MGA-665P8 provides typical device
performance of 1.45 dB noise figure, 16 dB gain and an
OIP3 of +18.1 dBm at 5.25 GHz, at a bias point of 3 V and
20.5 mA.
Features
• Surface Mount, 2.0 x 2.0 x 0.75 mm 8-lead LPCC
• Active-low power-down function
• Single +3 V supply operation
• Low noise and high gain MMIC
• Output 50 Ω match
• Excellent isolation
• Minimal match and external biasing components
• Housed in miniature 2 x 2 x 0.75 mm LPCC package
• Pb-free & MSL-1 package
Specifications
• 0.5 to 6 GHz operation
• At 3 V, 20.5 mA, 2.4 GHz:
NF = 1.2 dB
Gain = 18.4 dB
OIP3 = 19 dBm
• At 3 V, 20.5 mA, 5.25 GHz:
NF = 1.45 dB
Gain = 16 dB
OIP3 = 18.1 dBm
Pin Configuration, Top View
1: GND
2: RFIN
3: GND
4: UNUSED
GND PADDLE
8: UNUSED
POWER DOWN FUNCITON:
LOGIC LOW (0-1 V): POWER ON
LOGIC HIGH (2-3 V): POWER OFF
7: RFOUT & VD
6: VD
5: POWERDOWN
NOTES:
1. PINS 1, 3, AND PADDLE NEED TO BE
PROPERLY GROUNDED TO OBTAIN
SPECIFIED PERFORMANCE.
2. SUPPLY VOLTAGE, VD, NEEDS TO BE
APPLIED AT PINS 6 & 7. SUPPLY AT
PIN 7 TO BE APPLIED USING A BIAS
TEE OR EQUIVALENT.
Attention: Observe precautions for handling electrostatic sensitive devices.
ESD Machine Model = 40 V
ESD Human Body Model = 150 V
Refer to Avago Application Note A004R: Electrostatic Discharge, Damage and Control.
VD = 3 V
8.2 nH
9.1 Ω
RFIN
0.6 pF
1000 pF
2.2 nH
3 pF
1 nH
0.2 pF
RF0UT
Figure 5: Simplified schematic of 5.25 GHz production test board, which represents a tradeoff be-
tween Gain, NF, OIP3, P1dB and return loss measurements. Circuit losses have been de-embedded
from actual measurements.
MGA-665P8 DC Performance Curves (at 25°C unless specified otherwise)
40
35
30
25
20
15
-40°C
10 25°C
85°C
5
1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
VOLTAGE (V)
25
2.7 V
20 3.0 V
3.3 V
15
10
5
0
0 0.5 1.0 1.5 2.0 2.5 3.0
CONTROL VOLTAGE (V)
Figure 6. Current vs. supply voltage.
Figure 7. Current vs. control voltage.
4페이지 22
20
18
16
14
2.7 V
12 3.0 V
3.3 V
10
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
FREQUENCY (GHz)
10
9
8
7
6
5
2.7 V
4 3.0 V
3.3 V
30.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
FREQUENCY (GHz)
25
15
5
-5
-15
S22
-25 S21
S11
-35
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
FREQUENCY (GHz)
Figure 22. Output third order intercept point (50 Figure 23. Output power for 1 dB gain compres-
Ω) vs. frequency and temperature.
sion (50 Ω) vs. frequency and voltage.
Figure 24. S-Parameters (50 Ω) vs. frequency.
20
15
10
5
Pout vs. Pin
0 GAIN
P1dB
-5
-20 -15 -10 -5 0 5 10
Pin (dBm)
6
5
VSWR_IN
VSWR_OUT
4
3
2
1
00.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
FREQUENCY (GHz)
Figure 25. Output power and gain vs. input
power at 5.25 GHz.
Figure 26. Input and output VSWR (50 Ω) vs.
frequency.
Note:
11. Measurements obtained using a 50 Ω test fixture with input and output connected directly to the fixture. Gain, OIP3 and P1dB were mea-
sured at this 50 Ω condition.
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부품번호 | 상세설명 및 기능 | 제조사 |
MGA-665P8 | GaAs Enhancement-Mode PHEMT 0.5 - 6 GHz Low Noise Amplifier | Agilent |
MGA-665P8 | Low Noise Amplifier | AVAGO |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |