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MGA-665P8 데이터시트 PDF




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부품번호 MGA-665P8 기능
기능 Low Noise Amplifier
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MGA-665P8 데이터시트, 핀배열, 회로
MGA-665P8
GaAs Enhancement-Mode PHEMT
0.5 – 6 GHz Low Noise Amplifier
Data Sheet
Description
Avago’s MGA-665P8 is an economical, easy-to-use
GaAs MMIC Low Noise Amplifier (LNA) with a unique
active-low power-down function. The LNA has low
noise figure and high gain achieved through the use of
Avago Technologies’ proprietary GaAs Enhancement-
mode PHEMT process. It is housed in a miniature 2.0 x
2.0 x 0.75 mm 8-pin Leadless-Plastic-Chip-Carrier (LPCC)
package. The compact footprint and low profile coupled
with low noise, high gain and high linearity makes the
MGA-665P8 an ideal choice as an LNA for broadband
general-purpose applications. Its excellent broadband
isolation also makes it a good buffer amplifier.
The output of the MGA-665P8 provides a very good
broadband match to 50 Ω. Its input requires a simple
external LC network to provide a low noise figure and
good input return loss. Power supply voltage is applied
to both the output terminal and a separate VD terminal.
A simple external bias insertion circuit consisting of a
shunt inductor and a series dc block capacitor is suf-
ficient to apply power supply voltage to the output of
the MGA-665P8. The MGA-665P8 provides typical device
performance of 1.45 dB noise figure, 16 dB gain and an
OIP3 of +18.1 dBm at 5.25 GHz, at a bias point of 3 V and
20.5 mA.
Features
Surface Mount, 2.0 x 2.0 x 0.75 mm 8-lead LPCC
Active-low power-down function
Single +3 V supply operation
Low noise and high gain MMIC
Output 50 Ω match
Excellent isolation
Minimal match and external biasing components
Housed in miniature 2 x 2 x 0.75 mm LPCC package
Pb-free & MSL-1 package
Specifications
0.5 to 6 GHz operation
At 3 V, 20.5 mA, 2.4 GHz:
NF = 1.2 dB
Gain = 18.4 dB
OIP3 = 19 dBm
At 3 V, 20.5 mA, 5.25 GHz:
NF = 1.45 dB
Gain = 16 dB
OIP3 = 18.1 dBm
Pin Configuration, Top View
1: GND
2: RFIN
3: GND
4: UNUSED
GND PADDLE
8: UNUSED
POWER DOWN FUNCITON:
LOGIC LOW (0-1 V): POWER ON
LOGIC HIGH (2-3 V): POWER OFF
7: RFOUT & VD
6: VD
5: POWERDOWN
NOTES:
1. PINS 1, 3, AND PADDLE NEED TO BE
PROPERLY GROUNDED TO OBTAIN
SPECIFIED PERFORMANCE.
2. SUPPLY VOLTAGE, VD, NEEDS TO BE
APPLIED AT PINS 6 & 7. SUPPLY AT
PIN 7 TO BE APPLIED USING A BIAS
TEE OR EQUIVALENT.
Attention: Observe precautions for handling electrostatic sensitive devices.
ESD Machine Model = 40 V
ESD Human Body Model = 150 V
Refer to Avago Application Note A004R: Electrostatic Discharge, Damage and Control.




MGA-665P8 pdf, 반도체, 판매, 대치품
VD = 3 V
8.2 nH
9.1
RFIN
0.6 pF
1000 pF
2.2 nH
3 pF
1 nH
0.2 pF
RF0UT
Figure 5: Simplified schematic of 5.25 GHz production test board, which represents a tradeoff be-
tween Gain, NF, OIP3, P1dB and return loss measurements. Circuit losses have been de-embedded
from actual measurements.
MGA-665P8 DC Performance Curves (at 25°C unless specified otherwise)
40
35
30
25
20
15
-40°C
10 25°C
85°C
5
1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
VOLTAGE (V)
25
2.7 V
20 3.0 V
3.3 V
15
10
5
0
0 0.5 1.0 1.5 2.0 2.5 3.0
CONTROL VOLTAGE (V)
Figure 6. Current vs. supply voltage.
Figure 7. Current vs. control voltage.


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MGA-665P8 전자부품, 판매, 대치품
22
20
18
16
14
2.7 V
12 3.0 V
3.3 V
10
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
FREQUENCY (GHz)
10
9
8
7
6
5
2.7 V
4 3.0 V
3.3 V
30.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
FREQUENCY (GHz)
25
15
5
-5
-15
S22
-25 S21
S11
-35
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
FREQUENCY (GHz)
Figure 22. Output third order intercept point (50 Figure 23. Output power for 1 dB gain compres-
Ω) vs. frequency and temperature.
sion (50 Ω) vs. frequency and voltage.
Figure 24. S-Parameters (50 Ω) vs. frequency.
20
15
10
5
Pout vs. Pin
0 GAIN
P1dB
-5
-20 -15 -10 -5 0 5 10
Pin (dBm)
6
5
VSWR_IN
VSWR_OUT
4
3
2
1
00.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
FREQUENCY (GHz)
Figure 25. Output power and gain vs. input
power at 5.25 GHz.
Figure 26. Input and output VSWR (50 Ω) vs.
frequency.
Note:
11.  Measurements obtained using a 50 Ω test fixture with input and output connected directly to the fixture. Gain, OIP3 and P1dB were mea-
sured at this 50 Ω condition.


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관련 데이터시트

부품번호상세설명 및 기능제조사
MGA-665P8

GaAs Enhancement-Mode PHEMT 0.5 - 6 GHz Low Noise Amplifier

Agilent
Agilent
MGA-665P8

Low Noise Amplifier

AVAGO
AVAGO

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