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부품번호 | IDW75D65D1 기능 |
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기능 | Diode ( Rectifier ) | ||
제조업체 | Infineon | ||
로고 | |||
전체 12 페이지수
Diode
RapidSwitchingEmitterControlledDiode
IDW75D65D1
EmitterControlledDiodeRapid1DualAnodeSeries
Datasheet
IndustrialPowerControl
IDW75D65D1
EmitterControlledDiodeRapid1DualAnodeSeries
Maximum Ratings
For optimum lifetime and reliability, Infineon recommends operating conditions that do not exceed 80% of the maximum ratings stated in this datasheet.
Parameter
Repetitivepeakreversevoltage,Tvj≥25°C
Diodeforwardcurrent,limitedbyTvjmax1)
TC=25°C
TC=100°C
Diodepulsedcurrent,tplimitedbyTvjmax
Diode surge non repetitive forward current2)
TC=25°C,tp=10.0ms,sinehalfwave
PowerdissipationTC=25°C
PowerdissipationTC=100°C
Operating junction temperature
Storage temperature
Soldering temperature,
wave soldering 1.6mm (0.063in.) from case for 10s
Symbol
VRRM
IF
IFpuls
IFSM
Ptot
Tvj
Tstg
Value
650
150.0
75.0
225.0
580.0
326.0
163.0
-40...+175
-55...+150
260
Unit
V
A
A
A
W
°C
°C
°C
Mounting torque, M3 screw
Maximum of mounting processes: 3
M
0.6 Nm
Thermal Resistances
Parameter
Characteristic
Diode thermal resistance,3)
junction - case
Thermal resistance
junction - ambient
Symbol Conditions
Rth(j-c)
Rth(j-a)
Max. Value
Unit
0.46 K/W
40 K/W
Electrical Characteristics, at Tvj = 25°C, unless otherwise specified
Parameter
Static Characteristic
Diode forward voltage
Reverse leakage current
Symbol Conditions
IF=75.0A
VF
Tvj=25°C
Tvj=125°C
Tvj=175°C
VR=650V
IR Tvj=25°C
Tvj=175°C
Value
Unit
min. typ. max.
-
-
1.35 1.70
1.32 -
V
- 1.28 -
- - 40.0 µA
- 3000.0 -
1) Maximum current for pin 1 and pin 3 is 80A (value limited by bondwire).
2) For a balanced current flow through pins 1 and 3.
3)Pleasebeawarethatinnonstandardloadconditions,duetohighRth(j-c),TvjclosetoTvjmaxcanbereached.
4
Rev.2.1,2014-12-10
4페이지 IDW75D65D1
EmitterControlledDiodeRapid1DualAnodeSeries
350 160
315 140
280
120
245
210 100
175 80
140 60
105
40
70
35 20
0
25 50 75 100 125 150 175
TC,CASETEMPERATURE[°C]
Figure 1. Power dissipation as a function of case
temperature
(Tvj≤175°C)
0
25 50 75 100 125 150 175
TC,CASETEMPERATURE[°C]
Figure 2. Collector current as a function of case
temperature
(VGE≥15V,Tvj≤175°C)
250
Tvj=25°C,IF=75A
225
Tvj=125°C,IF=75A
Tvj=175°C,IF=75A
D = 0.5
200
0.2 175
0.1
0.1 0.05 150
0.02
0.01
single pulse
125
100
75
50
i: 1 2 3 4 5 6 7
ri[K/W]: 3.1E-4 0.01435 0.09435 0.09881 0.22828 0.01967 2.0E-3
τi[s]: 1.0E-5 3.0E-5 2.2E-4 2.2E-3 0.01247 0.10291 1.85641
0.01
1E-6
1E-5 1E-4 0.001 0.01
tp,PULSEWIDTH[s]
0.1
1
Figure 3. Diode transient thermal impedance as a
function of pulse width
(D=tp/T)
25
0
200 600 1000 1400 1800 2200 2600 3000
dIF/dt,DIODECURRENTSLOPE[A/µs]
Figure 4. Typical reverse recovery time as a function of
diode current slope
(VR=400V)
7 Rev.2.1,2014-12-10
7페이지 | |||
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부품번호 | 상세설명 및 기능 | 제조사 |
IDW75D65D1 | Diode ( Rectifier ) | Infineon |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |