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부품번호 | IGW40N65F5A 기능 |
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기능 | IGBT ( Insulated Gate Bipolar Transistor ) | ||
제조업체 | Infineon | ||
로고 | |||
전체 14 페이지수
IGBT
Highspeed5FASTIGBTinTRENCHSTOPTM5technology
IGW40N65F5A
650VIGBT
Highspeedswitchingseriesfifthgeneration
Datasheet
IndustrialPowerControl
IGW40N65F5A
Highspeedswitchingseriesfifthgeneration
MaximumRatings
Foroptimumlifetimeandreliability,Infineonrecommendsoperatingconditionsthatdonotexceed80%ofthemaximumratingsstatedinthisdatasheet.
Parameter
Symbol
Value
Unit
Collector-emittervoltage,Tvj≥25°C
DCcollectorcurrent,limitedbyTvjmax
TC=25°C
TC=100°C
Pulsedcollectorcurrent,tplimitedbyTvjmax1)
VCE
IC
ICpuls
650
74.0
46.0
120.0
V
A
A
Turn off safe operating area
VCE≤650V,Tvj≤175°C,tp=1µs1)
-
120.0
A
Gate-emitter voltage
TransientGate-emittervoltage(tp≤10µs,D<0.010)
PowerdissipationTC=25°C
PowerdissipationTC=100°C
Operating junction temperature
Storage temperature
Soldering temperature,2)
wave soldering 1.6mm (0.063in.) from case for 10s
VGE
Ptot
Tvj
Tstg
±20
±30
250.0
125.0
-40...+175
-55...+150
260
V
W
°C
°C
°C
Mounting torque, M3 screw
Maximum of mounting processes: 3
M
0.6 Nm
ThermalResistance
Parameter
Characteristic
IGBT thermal resistance,
junction - case
Thermal resistance
junction - ambient
Symbol Conditions
Rth(j-c)
Rth(j-a)
Max.Value
Unit
0.60 K/W
40 K/W
ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Parameter
Symbol Conditions
StaticCharacteristic
Collector-emitter breakdown voltage V(BR)CES
Collector-emitter saturation voltage VCEsat
Gate-emitter threshold voltage
VGE(th)
Zero gate voltage collector current ICES
Gate-emitter leakage current
Transconductance
IGES
gfs
VGE=0V,IC=0.20mA
VGE=15.0V,IC=40.0A
Tvj=25°C
Tvj=125°C
Tvj=175°C
IC=0.40mA,VCE=VGE
VCE=650V,VGE=0V
Tvj=25°C
Tvj=175°C
VCE=0V,VGE=20V
VCE=20V,IC=40.0A
Value
Unit
min. typ. max.
650 -
-V
-
-
1.60 2.10
1.80 -
V
- 1.90 -
3.2 4.0 4.8 V
- - 40.0 µA
- 1000.0 -
- - 100 nA
- 50.0 - S
1) Defined by design. Not subject to production test.
2) Package not recommended for surface mount applications
4
Rev.2.1,2014-12-15
4페이지 IGW40N65F5A
Highspeedswitchingseriesfifthgeneration
275
250
225
200
175
150
125
100
75
50
25
0
25 50 75 100 125 150 175
TC,CASETEMPERATURE[°C]
Figure 1. Powerdissipationasafunctionofcase
temperature
(Tvj≤175°C)
80
70
60
50
40
30
20
10
0
25 50 75 100 125 150 175
TC,CASETEMPERATURE[°C]
Figure 2. Collectorcurrentasafunctionofcase
temperature
(VGE≥15V,Tvj≤175°C)
120 120
100
VGE = 20V
18V
80
15V
12V
60 10V
8V
40 7V
6V
5V
20
100
VGE = 20V
18V
80
15V
12V
60 10V
8V
40 7V
6V
5V
20
0
012345
VCE,COLLECTOR-EMITTERVOLTAGE[V]
Figure 3. Typicaloutputcharacteristic
(Tvj=25°C)
0
012345
VCE,COLLECTOR-EMITTERVOLTAGE[V]
Figure 4. Typicaloutputcharacteristic
(Tvj=150°C)
7 Rev.2.1,2014-12-15
7페이지 | |||
구 성 | 총 14 페이지수 | ||
다운로드 | [ IGW40N65F5A.PDF 데이터시트 ] |
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
IGW40N65F5 | IGBT ( Insulated Gate Bipolar Transistor ) | Infineon |
IGW40N65F5A | IGBT ( Insulated Gate Bipolar Transistor ) | Infineon |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |