|
|
|
부품번호 | IKW40N65F5A 기능 |
|
|
기능 | IGBT ( Insulated Gate Bipolar Transistor ) | ||
제조업체 | Infineon | ||
로고 | |||
전체 16 페이지수
IGBT
Highspeed5FASTIGBTinTRENCHSTOPTM5technologycopackedwithRAPID1
fastandsoftantiparalleldiode
IKW40N65F5A
650VDuoPackIGBTanddiode
Highspeedswitchingseriesfifthgeneration
Datasheet
IndustrialPowerControl
IKW40N65F5A
Highspeedswitchingseriesfifthgeneration
MaximumRatings
Foroptimumlifetimeandreliability,Infineonrecommendsoperatingconditionsthatdonotexceed80%ofthemaximumratingsstatedinthisdatasheet.
Parameter
Symbol
Value
Unit
Collector-emittervoltage,Tvj≥25°C
DCcollectorcurrent,limitedbyTvjmax
TC=25°C
TC=100°C
Pulsedcollectorcurrent,tplimitedbyTvjmax1)
VCE
IC
ICpuls
650
74.0
46.0
120.0
V
A
A
Turn off safe operating area
VCE≤650V,Tvj≤175°C,tp=1µs1)
Diodeforwardcurrent,limitedbyTvjmax
TC=25°C
TC=100°C
Diodepulsedcurrent,tplimitedbyTvjmax1)
-
IF
IFpuls
120.0
36.0
21.0
120.0
A
A
A
Gate-emitter voltage
TransientGate-emittervoltage(tp≤10µs,D<0.010)
PowerdissipationTC=25°C
PowerdissipationTC=100°C
Operating junction temperature
Storage temperature
Soldering temperature,2)
wave soldering 1.6mm (0.063in.) from case for 10s
VGE
Ptot
Tvj
Tstg
±20
±30
250.0
125.0
-40...+175
-55...+150
260
V
W
°C
°C
°C
Mounting torque, M3 screw
Maximum of mounting processes: 3
M
0.6 Nm
ThermalResistance
Parameter
Characteristic
IGBT thermal resistance,
junction - case
Diode thermal resistance,
junction - case
Thermal resistance
junction - ambient
Symbol Conditions
Rth(j-c)
Rth(j-c)
Rth(j-a)
Max.Value
Unit
0.60 K/W
1.80 K/W
40 K/W
1) Defined by design. Not subject to production test.
2) Package not recommended for surface mount applications
4
Rev.2.1,2014-12-15
4페이지 IKW40N65F5A
Highspeedswitchingseriesfifthgeneration
DiodeCharacteristic,atTvj=150°C
Diode reverse recovery time
trr
Diode reverse recovery charge
Qrr
Diode peak reverse recovery current Irrm
Diode peak rate of fall of reverse
recoverycurrentduringtb
dirr/dt
Diode reverse recovery time
Diode reverse recovery charge
trr
Qrr
Diode peak reverse recovery current Irrm
Diode peak rate of fall of reverse
recoverycurrentduringtb
dirr/dt
Tvj=150°C,
VR=400V,
IF=20.0A,
diF/dt=1250A/µs
Tvj=150°C,
VR=400V,
IF=5.0A,
diF/dt=1330A/µs
- 98 - ns
- 1.06 - µC
- 18.0 - A
- -195 - A/µs
- 55 - ns
- 0.55 - µC
- 17.0 - A
- -425 - A/µs
7 Rev.2.1,2014-12-15
7페이지 | |||
구 성 | 총 16 페이지수 | ||
다운로드 | [ IKW40N65F5A.PDF 데이터시트 ] |
당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는 |
구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
IKW40N65F5 | IGBT ( Insulated Gate Bipolar Transistor ) | Infineon |
IKW40N65F5A | IGBT ( Insulated Gate Bipolar Transistor ) | Infineon |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |