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부품번호 | IRF135B203 기능 |
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기능 | Power MOSFET ( Transistor ) | ||
제조업체 | International Rectifier | ||
로고 | |||
전체 12 페이지수
Application
Brushed Motor drive applications
BLDC Motor drive applications
Battery powered circuits
Half-bridge and full-bridge topologies
Synchronous rectifier applications
Resonant mode power supplies
OR-ing and redundant power switches
DC/DC and AC/DC converters
DC/AC Inverters
G
Benefits
Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
Fully Characterized Capacitance and Avalanche SOA
Enhanced body diode dV/dt and dI/dt Capability
Lead-Free, RoHS Compliant, Halogen-Free
StrongIRFET™
IRF135B203
IRF135S203
HEXFET® Power MOSFET
D VDSS
135V
RDS(on) typ.
max
6.7m
8.4m
IS
D (Silicon Limited)
129A
GDS
TO-220AB
IRF135B203
D
S
G
D2-Pak
IRF135S203
G
Gate
D
Drain
S
Source
Base part number
IRF135B201
IRF135S201
Package Type
TO-220
D2-Pak
Standard Pack
Form
Quantity
Tube
50
Tape and Reel
800
Orderable Part Number
IRF135B203
IRF135S203
28
26
24
22
20
18
16
14
12
10
8
6
4
2
ID = 77A
TJ = 125°C
TJ = 25°C
4 6 8 10 12 14 16 18 20
VGS, Gate -to -Source Voltage (V)
Fig 1. Typical On– Resistance vs. Gate Voltage
1 www.irf.com © 2015 International Rectifier
140
120
100
80
60
40
20
0
25
50 75 100 125 150
TC , Case Temperature (°C)
175
Fig 2. Maximum Drain Current vs. Case Temperature
Submit Datasheet Feedback
June 17, 2015
1000
100
TOP
BOTTOM
VGS
15V
10V
7.0V
6.0V
5.5V
5.0V
4.5V
4.0V
10
4.0V
1
0.1
60µs PULSE WIDTH
Tj = 25°C
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 3. Typical Output Characteristics
1000
100
TJ = 175°C
10
TJ = 25°C
1
VDS = 50V
60µs PULSE WIDTH
0.1
12345678
VGS, Gate-to-Source Voltage (V)
Fig 5. Typical Transfer Characteristics
100000
10000
VGS = 0V, f = 1 MHZ
Ciss = C gs + Cgd, C ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
1000
Coss
Crss
100
0.1
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 7. Typical Capacitance vs. Drain-to-Source Voltage
4 www.irf.com © 2015 International Rectifier
1000
100
IRF135B203/IRF135S203
TOP
BOTTOM
VGS
15V
10V
7.0V
6.0V
5.5V
5.0V
4.5V
4.0V
4.0V
10
1
0.1
60µs PULSE WIDTH
Tj = 175°C
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 4. Typical Output Characteristics
3.5
ID = 77A
3.0 VGS = 10V
2.5
2.0
1.5
1.0
0.5
-60
-20 20 60 100 140
TJ , Junction Temperature (°C)
180
Fig 6. Normalized On-Resistance vs. Temperature
14
ID = 77A
12 VDS= 108V
10
VDS= 68V
VDS= 27V
8
6
4
2
0
0 40 80 120 160 200 240
QG, Total Gate Charge (nC)
Fig 8. Typical Gate Charge vs.Gate-to-Source Voltage
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June 17, 2015
4페이지 4.0
3.5
3.0
2.5
2.0
1.5 ID = 250µA
ID = 1.0mA
1.0
ID = 10mA
ID = 1.0A
0.5
-75 -50 -25 0 25 50 75 100 125 150 175
TJ , Temperature ( °C )
Fig 17. Threshold Voltage vs. Temperature
40
IF = 77A
35 VR = 115V
30 TJ = 25°C
TJ = 125°C
25
20
15
10
5
0
100 200 300 400 500 600 700 800 900 1000
diF /dt (A/µs)
Fig 19. Typical Recovery Current vs. dif/dt
IRF135B203/IRF135S203
40
IF = 54A
35 VR = 115V
30 TJ = 25°C
TJ = 125°C
25
20
15
10
5
0
100 200 300 400 500 600 700 800 900 1000
diF /dt (A/µs)
Fig 18. Typical Recovery Current vs. dif/dt
1600
1400
1200
1000
IF = 54A
VR = 115V
TJ = 25°C
TJ = 125°C
800
600
400
200
0
100 200 300 400 500 600 700 800 900 1000
diF /dt (A/µs)
Fig 20. Typical Stored Charge vs. dif/dt
7 www.irf.com
1600
1400
1200
1000
IF = 77A
VR = 115V
TJ = 25°C
TJ = 125°C
800
600
400
200
0
100 200 300 400 500 600 700 800 900 1000
diF /dt (A/µs)
Fig 21. Typical Stored Charge vs. dif/dt
© 2015 International Rectifier
Submit Datasheet Feedback
June 17, 2015
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부품번호 | 상세설명 및 기능 | 제조사 |
IRF135B203 | Power MOSFET ( Transistor ) | International Rectifier |
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