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부품번호 PESD5V0S1ULD 기능
기능 Unidirectional ESD protection diode
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PESD5V0S1ULD 데이터시트, 핀배열, 회로
PESD5V0S1ULD
Unidirectional ESD protection diode
Rev. 1 — 19 October 2010
Product data sheet
1. Product profile
1.1 General description
Unidirectional ElectroStatic Discharge (ESD) protection diode designed to protect one
signal line from the damage caused by ESD and other transients. The device is housed in
a SOD882D leadless ultra small Surface-Mounted Device (SMD) plastic package with
visible and solderable side pads.
1.2 Features and benefits
„ ESD protection of one line
„ Ultra small SMD plastic package
„ Solderable side pads
„ Package height typ. 0.37 mm
„ Low clamping voltage: VCL = 20 V
„ AEC-Q101 qualified
„ ESD protection up to 30 kV
„ IEC 61000-4-2; level 4 (ESD)
„ IEC 61000-4-5 (surge); IPP = 15 A
„ Max. peak pulse power: PPP = 150 W
„ Ultra low leakage current: IRM = 100 nA
1.3 Applications
„ Computers and peripherals
„ Audio and video equipment
„ Communication systems
„ Portable electronics
1.4 Quick reference data
Table 1. Quick reference data
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
VRWM
Cd
reverse standoff voltage
diode capacitance
f = 1 MHz; VR = 0 V
Min Typ Max Unit
- - 5.0 V
- 152 200 pF




PESD5V0S1ULD pdf, 반도체, 판매, 대치품
NXP Semiconductors
PESD5V0S1ULD
Unidirectional ESD protection diode
6. Characteristics
Table 8. Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
VRWM
IRM
VBR
Cd
VCL
rdyn
reverse standoff voltage
reverse leakage current
breakdown voltage
diode capacitance
clamping voltage
VRWM = 5.0 V
IR = 5 mA
f = 1 MHz;
VR = 0 V
dynamic resistance
IPP = 1 A
IPP = 15 A
IR = 10 A
Min Typ Max Unit
- - 5.0 V
-
0.1 1
μA
6.4 6.8 7.2 V
- 152 200 pF
[1][2]
-
-
[2][3] -
-9
- 20
0.3 -
V
V
Ω
[1] Non-repetitive current pulse 8/20 μs exponential decay waveform according to IEC 61000-4-5.
[2] Measured from pin 1 to pin 2.
[3] Non-repetitive current pulse; Transmission Line Pulse (TLP) tp = 100 ns; square pulse;
ANSI/ESD STM5.1-2008.
104
PPP
(W)
103
006aac483
1.2
PPP
PPP(25°C)
0.8
001aaa633
102 0.4
10
1
10 102 103
tp (μs)
0
0 50 100 150 200
Tj (°C)
Fig 4.
Tamb = 25 °C
Peak pulse power as a function of exponential
pulse duration; typical values
Fig 5.
Relative variation of peak pulse power as a
function of junction temperature; typical
values
PESD5V0S1ULD
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 19 October 2010
© NXP B.V. 2010. All rights reserved.
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PESD5V0S1ULD 전자부품, 판매, 대치품
NXP Semiconductors
PESD5V0S1ULD
Unidirectional ESD protection diode
7. Application information
The PESD5V0S1ULD is designed for the protection of one unidirectional data or signal
line from the damage caused by ESD and surge pulses. The device may be used on lines
where the signal polarities are either positive or negative with respect to ground. The
PESD5V0S1ULD provides a surge capability of 150 W per line for an 8/20 μs waveform.
line to be protected
(positive signal polarity)
line to be protected
(negative signal polarity)
PESD5V0S1ULD
PESD5V0S1ULD
GND
unidirectional protection of one line
GND
006aac487
Fig 10. Application diagram
Circuit board layout and protection device placement
Circuit board layout is critical for the suppression of ESD, Electrical Fast Transient (EFT)
and surge transients. The following guidelines are recommended:
1. Place the device as close to the input terminal or connector as possible.
2. The path length between the device and the protected line should be minimized.
3. Keep parallel signal paths to a minimum.
4. Avoid running protected conductors in parallel with unprotected conductors.
5. Minimize all Printed-Circuit Board (PCB) conductive loops including power and
ground loops.
6. Minimize the length of the transient return path to ground.
7. Avoid using shared transient return paths to a common ground point.
8. Ground planes should be used whenever possible. For multilayer PCBs, use ground
vias.
8. Test information
8.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
PESD5V0S1ULD
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 19 October 2010
© NXP B.V. 2010. All rights reserved.
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PESD5V0S1UL

Unidirectional ESD protection diodes

NXP Semiconductors
NXP Semiconductors
PESD5V0S1ULD

Unidirectional ESD protection diode

NXP Semiconductors
NXP Semiconductors

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