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PESD5V0U1UL 데이터시트 PDF




NXP Semiconductors에서 제조한 전자 부품 PESD5V0U1UL은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


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부품번호 PESD5V0U1UL 기능
기능 Ultra low capacitance unidirectional ESD protection diodes
제조업체 NXP Semiconductors
로고 NXP Semiconductors 로고


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PESD5V0U1UL 데이터시트, 핀배열, 회로
PESD5V0U1UA;
PESD5V0U1UB; PESD5V0U1UL
Ultra low capacitance unidirectional ESD protection diodes
Rev. 01 — 30 October 2008
Product data sheet
1. Product profile
1.1 General description
Ultra low capacitance unidirectional ElectroStatic Discharge (ESD) protection diodes in
small Surface-Mounted Device (SMD) plastic packages designed to protect one signal
line from the damage caused by ESD and other transients.
Table 1. Product overview
Type number
Package
NXP
PESD5V0U1UA
SOD323
PESD5V0U1UB
SOD523
PESD5V0U1UL
SOD882
JEITA
SC-76
SC-79
-
Package configuration
very small
ultra small and flat lead
leadless ultra small
1.2 Features
I Unidirectional ESD protection of one line I ESD protection up to 9 kV
I Ultra low diode capacitance: Cd = 2 pF I IEC 61000-4-2; level 4 (ESD)
I Very low leakage current: IRM = 1 nA I AEC-Q101 qualified
1.3 Applications
I USB interfaces
I 10/100/1000 Mbit/s Ethernet
I FireWire
I High-speed data lines
I Subscriber Identity Module (SIM) card
protection
I Cellular handsets and accessories
I Portable electronics
I Communication systems
I Computers and peripherals
I Audio and video equipment
1.4 Quick reference data
Table 2. Quick reference data
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
VRWM
reverse standoff voltage
Min Typ Max Unit
- - 5V




PESD5V0U1UL pdf, 반도체, 판매, 대치품
NXP Semiconductors
PESD5V0U1UA/UB/UL
Ultra low capacitance unidirectional ESD protection diodes
6. Characteristics
Table 9. Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
VRWM
IRM
VBR
Cd
rdif
reverse standoff voltage
reverse leakage current
breakdown voltage
diode capacitance
differential resistance
VRWM = 5 V
IR = 5 mA
f = 1 MHz
VR = 0 V
VR = 5 V
IR = 1 mA
Min Typ Max Unit
- - 5V
- 1 100 nA
5.8 6.8 8.8 V
- 2 2.6 pF
- 1.7 2.3 pF
- - 100
2.0
Cd
(pF)
1.9
1.8
1.7
006aab348
I
VCL VBR VRWM
+
P-N
IRM
IR
V
1.6
012345
VR (V)
Fig 2.
f = 1 MHz; Tamb = 25 °C
Diode capacitance as a function of reverse
voltage; typical values
IPP
006aaa407
Fig 3. V-I characteristics for a unidirectional
ESD protection diode
PESD5V0U1UA_UB_UL_1
Product data sheet
Rev. 01 — 30 October 2008
© NXP B.V. 2008. All rights reserved.
4 of 12

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PESD5V0U1UL 전자부품, 판매, 대치품
NXP Semiconductors
9. Package outline
PESD5V0U1UA/UB/UL
Ultra low capacitance unidirectional ESD protection diodes
1.35
1.15
1
0.45
0.15
1.1
0.8
2.7 1.8
2.3 1.6
0.85
0.75
1
1.65 1.25
1.55 1.15
0.65
0.58
Dimensions in mm
2
0.40
0.25
0.25
0.10
03-12-17
Dimensions in mm
2
0.34
0.26
0.17
0.11
02-12-13
Fig 6. Package outline
PESD5V0U1UA (SOD323/SC-76)
Fig 7. Package outline
PESD5V0U1UB (SOD523/SC-79)
0.30
0.22
0.62
0.55
2
0.30
0.22
1
0.55
0.47
Dimensions in mm
Fig 8. Package outline PESD5V0U1UL (SOD882)
0.50
0.46
0.65
1.02
0.95
cathode marking on top side
03-04-17
10. Packing information
Table 10. Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.[1]
Type number Package Description
Packing quantity
3000 8000 10000
PESD5V0U1UA SOD323 4 mm pitch, 8 mm tape and reel
-115 -
-135
PESD5V0U1UB SOD523 2 mm pitch, 8 mm tape and reel
- -315 -
4 mm pitch, 8 mm tape and reel
-115 -
-135
PESD5V0U1UL SOD882 2 mm pitch, 8 mm tape and reel
- - -315
[1] For further information and the availability of packing methods, see Section 14.
PESD5V0U1UA_UB_UL_1
Product data sheet
Rev. 01 — 30 October 2008
© NXP B.V. 2008. All rights reserved.
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PESD5V0U1UA

Ultra low capacitance unidirectional ESD protection diodes

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PESD5V0U1UB

Ultra low capacitance unidirectional ESD protection diodes

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