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부품번호 | PESD5V0U2BM 기능 |
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기능 | Ultra low capacitance bidirectional double ESD protection array | ||
제조업체 | NXP Semiconductors | ||
로고 | |||
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BOTTOM VIEW
PESD5V0U2BM
Ultra low capacitance bidirectional double ESD
protection array
Rev. 01 — 14 August 2008
Product data sheet
1. Product profile
1.1 General description
Ultra low capacitance bidirectional double ElectroStatic Discharge (ESD) protection diode
array in a SOT883 (SC-101) leadless ultra small Surface-Mounted Device (SMD) plastic
package designed to protect up to two signal lines from the damage caused by ESD and
other transients.
1.2 Features
I Bidirectional ESD protection of up to I ESD protection up to 10 kV
two lines
I Ultra low diode capacitance: Cd = 2.9 pF I IEC 61000-4-2; level 4 (ESD)
I Ultra low leakage current: IRM = 5 nA I AEC-Q101 qualified
1.3 Applications
I Computers and peripherals
I Audio and video equipment
I Cellular handsets and accessories
I 10/100/1000 Mbit/s Ethernet
I Communication systems
I Portable electronics
I Subscriber Identity Module (SIM) card
protection
I FireWire
I High-speed data lines
1.4 Quick reference data
Table 1. Quick reference data
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Per diode
VRWM
Cd
reverse standoff voltage
diode capacitance
f = 1 MHz; VR = 0 V
Min Typ Max Unit
- - 5V
- 2.9 3.5 pF
NXP Semiconductors
PESD5V0U2BM
Ultra low capacitance bidirectional double ESD protection array
6. Characteristics
Table 8. Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Per diode
VRWM
reverse standoff
voltage
IRM reverse leakage current VRWM = 5 V
VBR breakdown voltage IR = 5 mA
Cd
diode capacitance
f = 1 MHz
VR = 0 V
VR = 5 V
rdif differential resistance IR = 1 mA
Min Typ Max Unit
- - 5V
- 5 100 nA
5.5 6.5 9.5 V
- 2.9 3.5 pF
- 1.9 - pF
- - 100 Ω
3.0
Cd
(pF)
2.6
006aab036
2.2
1.8
012345
VR (V)
Fig 2.
f = 1 MHz; Tamb = 25 °C
Diode capacitance as a function of reverse
voltage; typical values
IPP
−VCL −VBR −VRWM
IR
IRM
−IRM
−IR
VRWM VBR VCL
−
−IPP
+
006aaa676
Fig 3. V-I characteristics for a bidirectional
ESD protection diode
PESD5V0U2BM_1
Product data sheet
Rev. 01 — 14 August 2008
© NXP B.V. 2008. All rights reserved.
4 of 11
4페이지 NXP Semiconductors
9. Package outline
PESD5V0U2BM
Ultra low capacitance bidirectional double ESD protection array
0.30
0.22
0.62
0.55
0.55
0.47
3
0.65
0.30
0.22
2
1
0.20
0.12
0.35
Dimensions in mm
Fig 6. Package outline SOT883 (SC-101)
0.50
0.46
1.02
0.95
03-04-03
10. Packing information
Table 9. Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.[1]
Type number
Package Description
PESD5V0U2BM
SOT883 2 mm pitch, 8 mm tape and reel
[1] For further information and the availability of packing methods, see Section 14.
Packing
quantity
10 000
-315
PESD5V0U2BM_1
Product data sheet
Rev. 01 — 14 August 2008
© NXP B.V. 2008. All rights reserved.
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PESD5V0U2BM | Ultra low capacitance bidirectional double ESD protection array | NXP Semiconductors |
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DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |