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부품번호 | PESD3V3S5UD 기능 |
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기능 | Fivefold ESD protection diode arrays | ||
제조업체 | NXP Semiconductors | ||
로고 | |||
전체 13 페이지수
PESDxS5UD series
Fivefold ESD protection diode arrays
Rev. 02 — 7 December 2006
Product data sheet
1. Product profile
1.1 General description
Fivefold ElectroStatic Discharge (ESD) protection diode arrays in a SOT457 (SC-74) small
Surface-Mounted Device (SMD) plastic package designed to protect up to five signal lines
from the damage caused by ESD and other transients.
1.2 Features
I ESD protection of up to five lines
I Max. peak pulse power: PPP = 200 W
I Ultra low leakage current: IRM = 50 pA
I Low clamping voltage: VCL = 12 V at
IPP = 20 A
I ESD protection up to 30 kV
I IEC 61000-4-2; level 4 (ESD)
I IEC 61000-4-5 (surge); IPP up to 20 A
1.3 Applications
I Computers and peripherals
I Audio and video equipment
I Cellular handsets and accessories
I Communication systems
I Portable electronics
I Subscriber Identity Module (SIM) card
protection
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Per diode
VRWM
reverse standoff voltage
PESD3V3S5UD
PESD5V0S5UD
PESD12VS5UD
PESD15VS5UD
PESD24VS5UD
Conditions
Min Typ Max Unit
- - 3.3 V
- - 5V
- - 12 V
- - 15 V
- - 24 V
NXP Semiconductors
PESDxS5UD series
Fivefold ESD protection diode arrays
120
IPP
(%)
80
40
100 % IPP; 8 µs
001aaa630
e−t
50 % IPP; 20 µs
0
0 10 20 30 40
t (µs)
Fig 1. 8/20 µs pulse waveform according to
IEC 61000-4-5
IPP
100 %
90 %
001aaa631
10 %
tr = 0.7 ns to 1 ns
30 ns
60 ns
Fig 2. ESD pulse waveform according to
IEC 61000-4-2
t
6. Characteristics
Table 8. Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Per diode
VRWM
reverse standoff voltage
PESD3V3S5UD
PESD5V0S5UD
PESD12VS5UD
PESD15VS5UD
PESD24VS5UD
IRM reverse leakage current
PESD3V3S5UD
VRWM = 3.3 V
PESD5V0S5UD
VRWM = 5 V
PESD12VS5UD
VRWM = 12 V
PESD15VS5UD
VRWM = 15 V
PESD24VS5UD
VRWM = 24 V
VBR breakdown voltage
IR = 1 mA
PESD3V3S5UD
PESD5V0S5UD
PESD12VS5UD
PESD15VS5UD
PESD24VS5UD
Min Typ Max Unit
- - 3.3 V
- - 5V
- - 12 V
- - 15 V
- - 24 V
- 300 800 nA
- 80 200 nA
-
0.05 15
nA
-
0.05 15
nA
-
0.05 15
nA
5.3 5.6 5.9
6.4 6.8 7.2
12.5 14.5 16
17 18 19
25.5 27
29
V
V
V
V
V
PESDXS5UD_SER_2
Product data sheet
Rev. 02 — 7 December 2006
© NXP B.V. 2006. All rights reserved.
4 of 13
4페이지 NXP Semiconductors
PESDxS5UD series
Fivefold ESD protection diode arrays
ESD TESTER
Rd
Cs
IEC 61000-4-2 network
Cs = 150 pF; Rd = 330 Ω
450 Ω
RG 223/U
50 Ω coax
DUT
(DEVICE
UNDER
TEST)
10×
ATTENUATOR
4 GHz DIGITAL
OSCILLOSCOPE
50 Ω
vertical scale = 200 V/div
horizontal scale = 50 ns/div
GND
unclamped +1 kV ESD voltage waveform
(IEC 61000-4-2 network)
vertical scale = 20 V/div
horizontal scale = 50 ns/div
PESD24VS5UD
GND
GND
GND
GND
GND
PESD15VS5UD
PESD12VS5UD
PESD5V0S5UD
PESD3V3S5UD
clamped +1 kV ESD voltage waveform
(IEC 61000-4-2 network)
GND
GND
vertical scale = 200 V/div
horizontal scale = 50 ns/div
unclamped −1 kV ESD voltage waveform
(IEC 61000-4-2 network)
Fig 9. ESD clamping test setup and waveforms
vertical scale = 10 V/div
horizontal scale = 50 ns/div
clamped −1 kV ESD voltage waveform
(IEC 61000-4-2 network)
006aaa702
PESDXS5UD_SER_2
Product data sheet
Rev. 02 — 7 December 2006
© NXP B.V. 2006. All rights reserved.
7 of 13
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PESD3V3S5UD | Fivefold ESD protection diode arrays | NXP Semiconductors |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |