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PDF PXFC192207NF Data sheet ( Hoja de datos )
| Número de pieza | PXFC192207NF | |
| Descripción | Thermally-Enhanced High Power RF LDMOS FET | |
| Fabricantes | Infineon | |
| Logotipo |  |
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PXFC192207NF
Thermally-Enhanced High Power RF LDMOS FET
220 W, 28 V, 1805 – 1990 MHz
Description
The PXFC192207NF is a 220-watt LDMOS FET intended for use
in multi-standard cellular power amplifier applications in the 1805
to 1990 MHz frequency band. Features include input and output
matching, high gain and a thermally-enhanced plastic package.
Manufactured with Infineon's advanced LDMOS process, this
device provides excellent thermal performance and superior
reliability.
Two-carrier WCDMA Drive-up
VDD = 28 V, IDQ = 1600 mA, VGS = 2.75 V,
ƒ = 1875 MHz, 3GPP WCDMA signal,
PAR = 8 dB, 10 MHz carrier spacing,
BW 3.84 MHz
21
56
20 Gain
48
19 40
18 32
17 24
16 16
15
Efficiency
8
14
29
b192207nf_g1
0
33 37 41 45 49 53
Output Power (dBm)
PXFC192207NF
Package PG-HBSOF-4-1
Features
• Broadband internal input and output matching
• Typical Pulsed CW performance, 1880 MHz, 28 V,
10 µs pulse width, 10% duty cycle, single side
- Output power at P1dB = 220 W
- Efficiency = 56%
- Gain = 19 dB
• Typical single-carrier WCDMA performance, 1880
MHz, 28 V, 10 dB PAR @ 0.01% CCDF, Test Model
1 with 64DPCH
- Output power = 50 W avg
- Efficiency = 34%
- Gain = 20 dB
- ACPR = –33 dBc @ 5 MHz
• Capable of handling 10:1 VSWR @28 V, 220 W
(CW) output power
• Integrated ESD protection: Human Body Model,
Class 1C (per JESD22-A114)
• Low thermal resistance
• Pb-free and RoHS compliant
RF Characteristics
Two-carrier WCDMA Specifications (tested in Infineon test fixture)
VDD = 28 V, IDQ = 1600 mA, POUT = 50 W avg, ƒ1 = 1870 MHz, ƒ2 = 1880 MHz, 3GPP signal, channel bandwidth = 3.84 MHz,
peak/average = 8 dB @ 0.01% CCDF
Characteristic
Gain
Drain Efficiency
Intermodulation Distortion
Symbol
Gps
hD
IMD
Min
17.5
27.5
—
Typ
18.7
30.3
–32.7
Max
—
—
–29
Unit
dB
%
dBc
All published data at TCASE = 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 9
Rev. 02.1, 2014-11-18
1 page  
Reference Circuit , 1805 – 1880 MHz
R802
C801 C802
R801
R803 C803
R804
S1 S2
S3
RO4350, 0.508
(62)
R102
C102
C101
R101
RF_IN
C104
C103
PXFC192207NF_IN_01
Reference circuit assembly diagram (not to scale)
PXFC192207NF
RO4350, 0.508
(62)
C206 C207
C205
C208
C209
C201
C202
C203
C204
C210
C214
C213
C211 C212
VDD
RF_OUT
VDD
PXFC192207NF_OUT_01
pxfc192207nf_CD_07-11-2014
Data Sheet
5 of 9
Rev. 02.1, 2014-11-18
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet PXFC192207NF.PDF ] | |
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