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PDF PXFC192207FH Data sheet ( Hoja de datos )
| Número de pieza | PXFC192207FH | |
| Descripción | Thermally-Enhanced High Power RF LDMOS FET | |
| Fabricantes | Infineon | |
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PXFC192207FH
Thermally-Enhanced High Power RF LDMOS FET
220 W, 28 V, 1805 – 1990 MHz
Description
The PXFC192207FH is a 220-watt LDMOS FET intended for use
in multi-standard cellular power amplifier applications in the 1805
to 1990 MHz frequency band. Features include input and output
matching, high gain and thermally-enhanced package with earless
flanges. Manufactured with Infineon's advanced LDMOS process,
this device provides excellent thermal performance and superior
reliability.
Two-carrier WCDMA Drive-up
VDD = 28 V,IDQ = 1600 mA,
3GPP WCDMA signal, PAR = 8 dB,
10 MHz carrier spacing, BW 3.84 MHz
30
1930 MHz
25 1960 MHz
1990 MHz
20
Gain
15
60
50
40
30
10 20
5
0
30
10
Efficiency
35 40 45
c192207fh_g1
50
0
55
Output Power (dBm)
PXFC192207FH
Package H-37288G-4/2
Features
• Broadband input and output matching
• Typical Pulsed CW performance, 1990 MHz, 28 V,
16 µs pulse width, 10 % duty cycle, class AB
- Output power at P1dB = 220 W
- Efficiency = 55%
- Gain = 20 dB
• Typical single-carrier WCDMA performance, 1990
MHz, 28 V, 9.9 dB PAR @ 0.01% CCDR
- Output power = 50 W
- Efficiency = 29%
- Gain = 20 dB
- ACPR = –34 dBc @ 5 MHz
• Capable of handling 10:1 VSWR @28 V, 220 W
(CW) output power
• Integrated ESD protection : Human Body Model,
Class 1C (per JESD22-A114)
• Low thermal resistance
• Pb-free and RoHS compliant
RF Characteristics
Two-carrier WCDMA Specifications (tested in Infineon production test fixture)
VDD = 28 V, IDQ = 1600 mA, POUT = 50 W avg, ƒ1 = 1980 MHz, ƒ2 = 1990 MHz, 3GPP signal, channel bandwidth = 3.84 MHz,
peak/average = 8 dB @ 0.01% CCDF
Characteristic
Linear Gain
Drain Efficiency
Intermodulation Distortion
Symbol
Gps
hD
IMD
Min
19
29
—
Typ
20.5
32
–32.5
Max
—
—
–29
Unit
dB
%
dBc
All published data at TCASE = 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 9
Rev. 04.1, 2016-06-22
1 page  
PXFC192207FH
Broadband Circuit Impedance
Z Source
D
Z Load
Freq
[MHz]
1930
1960
1990
G
S
Z Source W
R jX
3.12 –4.70
3.11 –4.62
3.10 –4.55
Z Load W
R jX
1.15 –2.80
1.14 –2.69
1.13 –2.58
Load Pull Performance
Each Side Load Pull Performance – Pulsed CW signal: 16 µs, 10% duty cycle, 28 V, 1100 mA
Max Output Power
P1dB
Max PAE
Freq
[MHz]
Zs
[W]
Zl
Gain
POUT
POUT
PAE
Zl
Gain
POUT
[W]
[dB]
[dBm]
[W]
[%]
[W]
[dB]
[dBm]
1805 2.1–j3.4
0.7–j2.4
16.8
55.1
324
54.1 1.6–j1.9 19.3
53.4
1880 2.1–j3.3
0.7–j2.5
17.6
55.0
316
54.4 1.6–j1.9 20.3
53.0
1930 1.9–j3.7
0.8–j2.6
17.8
54.7
295
50.0 1.4–j2.0 20.6
53.0
1990 3.8–j4.1
0.7–j2.8
18.4
54.6
288
50.8 1.4–j2.1
21
52.8
POUT
[W]
219
200
200
191
PAE
[%]
65.7
65.0
62.8
61.7
Data Sheet
5 of 9
Rev. 04.1, 2016-06-22
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet PXFC192207FH.PDF ] | |
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