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Número de pieza | PXFC212551SC | |
Descripción | Thermally-Enhanced High Power RF LDMOS FET | |
Fabricantes | Infineon | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de PXFC212551SC (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
No Preview Available ! PXFC212551SC
Thermally-Enhanced High Power RF LDMOS FET
240 W, 28 V, 2110 – 2170 MHz
Description
The PXFC212551SC is a 240-watt LDMOS FET intended for use
in multi-standard cellular power amplifier applications in the 2110
to 2170 MHz frequency band. Features include input and output
matching, high gain and thermally-enhanced package with earless
flanges. Manufactured with Infineon's advanced LDMOS process,
this device provides excellent thermal performance and superior
reliability.
Two-carrier WCDMA Drive-up
VDD = 28 V, IDQ = 1600 mA
ƒ = 2165 MHz, 3GPP WCDMA signal,
PAR = 8 dB, 10 MHz carrier spacing,
BW 3.84 MHz
21
20 Gain
48
40
19 32
18 Efficiency
17
24
16
16 8
15
29
pxfc212551sc_g1
0
33 37 41 45 49 53
Output Power (dBm)
PXFC212551SC
Package H-37248H-2
Features
• Broadband internal input and output matching
• Typical Pulsed CW performance, 2140 MHz, 28 V,
10 µs pulse width, 10% duty cycle, Class AB
- Output power at P1dB = 240 W
- Efficiency = 50%
- Gain = 19 dB
• Capable of handling 10:1 VSWR @28 V, 240 W
(CW) output power
• Integrated ESD protection
• Human Body Model Class 2 (per ANSI/ESDA/
JEDEC JS-001)
• Low thermal resistance
• Pb-free and RoHS compliant
RF Characteristics
Two-carrier WCDMA Specifications (tested in Infineon test fixture)
VDD = 28 V, IDQ = 1600 mA, POUT = 50 W avg, ƒ1 = 2160 MHz, ƒ2 = 2170 MHz, 3GPP signal, channel bandwidth = 3.84 MHz,
peak/average = 8 dB @ 0.01% CCDF
Characteristic
Symbol
Gain
Drain Efficiency
Intermodulation Distortion
Gps
hD
IMD
All published data at TCASE = 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 8
Min
19
25
—
Typ
20.5
28
–31
Max
—
—
–27
Unit
dB
%
dBc
Rev. 03.1, 2015-04-13
1 page Reference Circuit , 2110 – 2170 MHz
RO4350, .020 MIL
C801 C802
R801
(60)
R803
C803
R804
S1
S2
S3
R805
VGS
R802
R103
C104 C103
R104
RF_IN
C105
R101
C101 C102
R102
PXFC212551SC
RO4350, .020 MIL
(61)
C205 C209 C208
C201
C210
VDD
C207
RF_OUT
C202
C206 C204 C211
C203
VDD
PXFC212551SC_IN_02
Reference circuit assembly diagram (not to scale)
PXFC212551SC_OUT_02
pxfc212551sc_CD_03-02-2015
Data Sheet
5 of 8
Rev. 03.1, 2015-04-13
5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet PXFC212551SC.PDF ] |
Número de pieza | Descripción | Fabricantes |
PXFC212551SC | Thermally-Enhanced High Power RF LDMOS FET | Infineon |
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