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PDF PTVA120251EA Data sheet ( Hoja de datos )

Número de pieza PTVA120251EA
Descripción Thermally-Enhanced High Power RF LDMOS FET
Fabricantes Infineon 
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PTVA120251EA
Thermally-Enhanced High Power RF LDMOS FET
25 W, 50 V, 500 – 1400 MHz
Description
The PTVA120251EA LDMOS FET is designed for use in power ampli-
fier applications in the 500 MHz to 1400 MHz frequency band. Features
include high gain and a thermally-enhanced package with bolt-down
flange. Manufactured with Infineon's advanced LDMOS process, this
device provides excellent thermal performance and superior reliability.
PTVA120251EA
Package H-36265-2
Power Sweep, Pulsed RF
VDD = 50 V, IDQ = 20 mA, TCASE = 25°C
300 µs pulse width, 12% duty cycle
60
Efficiency
55
70
60
50
45
40
35
30
18
Output Power
50
40
1200 MHz
1300 MHz 30
1400 MHz
1200 MHz
1300 Mhz
20
1400 MHz
a120251ea-v2-gr1a```
10
22 26 30 34
Input Power (dBm)
Features
Unmatched input and output
High gain and efficiency
Integrated ESD protection
ESD HBM Class 2, per ANSI/ESDA/JEDEC JS-001
Low thermal resistance
Excellent ruggedness
Pb-free and RoHS-compliant
Capable of withstanding a 10:1 load mismatch
(all phase angles) at POUT = 25 W, under CW
conditions
RF Characteristics
Typical RF Performance (not subject to production test, verified by design/characterization in Infineon test fixture)
VDD = 50 V, IDQ = 0.02 A, Input signal (tr = 5 ns, tf = 6.5 ns), 300 µs pulse width, 12% duty cycle, class AB test
P1dB
Mode of operation
ƒ IRL Gain Eff POUT Gain
P3dB
Eff
POUT Pdroop(pulse)
tr
(MHz) (dB) (dB) (%) (W) (dB) (%) (W) dB @ 30 W (ns)
tf
(ns)
Pulsed RF 1200 12 16.4 52
31 14.4 56
41
0.27
6 8
Pulsed RF 1300 11 16.0 56
32 14.0 59
40
0.20
6 8
Pulsed RF 1400 14 15.8 53
34 13.8 56
38
0.24
6 8
All published data at TCASE = 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 14
Rev. 04.2, 2016-04-19

1 page




PTVA120251EA pdf
Typical RF Performance (cont.)
Power Sweep, Pulsed RF
VDD = 50 V, IDQ = 20 mA
128 µs pulse width, 10% duty cycle
60
55
50
45
40
35
30
18
Efficiency
70
60
Output Power
50
40
1200 MHz
1300 MHz
1400 MHz
30
1200 MHz
1300 Mhz
20
1400 MHz
a120251ea-gr3a
10
22 26 30 34
Power In (dBm)
PTVA120251EA
Power Sweep, Pulsed RF
VDD = 50 V, IDQ = 20 mA
128 µs pulse width, 10% duty cycle
19
18
17 Gain
16
15
1200 MHz
14 1300 MHz
1400 MHz
13
a120251ea-gr3b
18 20 22 24 26 28 30 32 34
Power In (dBm)
Power Sweep, Pulsed RF
VDD = 50 V, IDQ = 20 mA, POUT = 25 W
128 µs pulse width, 10% duty cycle
19 70
18
17
Gain
60
Efficiency
50
16
1150
1250
1350
Frequency (MHz)
a120251ea-gr3c
40
1450
Power Sweep, Pulsed RF
VDD = 50 V, IDQ = 20 mA at P1dB
128 µs pulse width, 10% duty cycle
0.18
0.16 Power Droop
0.14
0.12
0.10
0.08
0.06
0.04
0.02
1150
1250
-10
-12
-14
Input Return Loss -16
1350
a120251ea-gr3d
-18
1450
Frequency (MHz)
Data Sheet
5 of 14
Rev. 04.2, 2016-04-19

5 Page





PTVA120251EA arduino
PTVA120251EA
Reference Circuits
DUT
Test Fixture Part No.
PCB
Frequency (MHz)
PTVA120251EA LTN/PTVA120251EA V2 * Rogers 6006, 0.635 mm [0.025”] thick, 1200 – 1400
2 oz. copper, εr = 6.15
PTVA120251EA LTN/PTVA120251EA E2 † Rogers 3010, 0.635 mm [0.025”] thick, 1200 – 1400
2 oz. copper, εr = 10.2
PTVA120251EA LTN/PTVA120251EA E3 † Rogers 4350B, 0.762mm [.030"] thick, 470 – 860
2 oz. copper, εr = 3.48
PTVA120251EA LTN/PTVA120251EA E4 † Rogers 3010, 0.635 mm [0.025”] thick, 960 – 1215
2 oz. copper, εr = 10.2
* See pages 11 – 12 for assembly information. Find Gerber files for this reference circuit on the Infineon Web site at
www.infineon.com/rfpower
† Gerber files for this reference circuit are available on request.
R801 C801
S1
R803
C802
R804
S2
S2
C803
R805 R802 R102
C104
C802
R101
VDD
C102
R103
C103
C204
C201
R201
C203
C202
RF_IN
C101
C205 RF_OUT
PTVA120251_IN_01A RO6006, 025 (62)
PTVA120251_OUT_02
RO6006, 025 (63)
pt va120251ea_cd_9-30-14
Assembly diagram for reference circuit LTN/PTVA120251EA V2, 1200 MHz to 1400 MHz (not to scale)
Data Sheet
11 of 14
Rev. 04.2, 2016-04-19

11 Page







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