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PDF AS1345 Data sheet ( Hoja de datos )
| Número de pieza | AS1345 | |
| Descripción | DC-DC Step-Up Converter | |
| Fabricantes | ams | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de AS1345 (archivo pdf) en la parte inferior de esta página. Total 29 Páginas | ||
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General Description
Figure 1:
Available Products
Devices
AS1345A
AS1345B
AS1345C
AS1345D
AS1345
18V, High Efficiency, DC-DC Step-Up
Converter
The AS1345 high efficiency DC-DC step-up converter contains
an internal N-channel and an internal P-channel output
isolation switch.
The device operates from a 2.9V to 5.0V supply and can boost
voltages up to 18V.
A hysteretic control scheme is used to provide the highest
operating efficiency over a wide range of input and output load
conditions. The internal MOSFET switches reduce the external
component count and a high switching frequency allows the
use of tiny surface mount components.
The AS1345 employ a factory set current limit to reduce ripple
and external component size in low output current
applications. With a 500mA current limit the AS1345 is capable
of providing 20mA @ 18V output.
Peak Coil Current
100mA
200mA
350mA
500mA
Output
adjustable or fixed
adjustable or fixed
adjustable or fixed
adjustable or fixed
For order related information, please refer to “Ordering &
Contact Information” on page 26.
Built-in safety features protect the internal switches and output
components from fault conditions. Additional power-saving
attributes include a very low quiescent current and a true
shutdown mode.
For further understanding in regards to the contents of the
datasheet, please refer to the Reference Guide located at the end
of the document.
ams Datasheet, Confidential: 2013-Nov [1-51]
AS1345 – 1
1 page  
Pin Assignments
Pin Number
TDFN WLP
6 B3
7 B2
8 B1
Pin Name
Description
SWOUT
LX
GND
Shutdown Disconnect Switch Out. Output pin of the internal
P-channel MOSFET. Connect to power inductor and decouple to GND
with a 10μF low ESR ceramic capacitor.
When the input disconnect feature is not desired, SWOUT should be
connected to SWIN and VDD.
Inductor. The drain of the internal N-channel MOSFET. Connect to
power inductor and to anode of a schottky diode.
Ground
ams Datasheet, Confidential: 2013-Nov [1-51]
AS1345 – 5
5 Page 
Typical Operating Characteristics
Figure 12:
Efficiency vs. VIN; ILOAD = 5mA, ILIMIT = 100mA
100
90
80
70
60
50
40
30
20
10
0
2.5 2.75 3 3.25 3.5 3.75 4 4.25 4.5
Input Voltage (V)
Figure 13:
Efficiency vs. VIN; ILOAD = 5mA/20mA, ILIMIT = 500mA
100
90
80
70
60
50
40
30
20
10
0
2.5 2.75
3 3.25 3.5 3.75
Input Voltage (V)
Iout = 5mA
Iout = 20mA
4 4.25 4.5
ams Datasheet, Confidential: 2013-Nov [1-51]
AS1345 – 11
11 Page | ||
| Páginas | Total 29 Páginas | |
| PDF Descargar | [ Datasheet AS1345.PDF ] | |
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