Datasheet.kr   

8N60 데이터시트 PDF




Unisonic Technologies에서 제조한 전자 부품 8N60은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


PDF 형식의 8N60 자료 제공

부품번호 8N60 기능
기능 N-CHANNEL POWER MOSFET
제조업체 Unisonic Technologies
로고 Unisonic Technologies 로고


8N60 데이터시트 를 다운로드하여 반도체의 전기적 특성과 매개변수에 대해 알아보세요.




전체 9 페이지수

미리보기를 사용할 수 없습니다

8N60 데이터시트, 핀배열, 회로
UNISONIC TECHNOLOGIES CO., LTD
8N60
8A, 600V N-CHANNEL
POWER MOSFET
„ DESCRIPTION
The UTC 8N60 is a high voltage and high current power
MOSFET, designed to have better characteristics, such as fast
switching time, low gate charge, low on-state resistance and have
a high rugged avalanche characteristics. This power MOSFET is
usually used at high speed switching applications in power
supplies, PWM motor controls, high efficient DC to DC converters
and bridge circuits.
„ FEATURES
* RDS(ON) < 1.2@VGS = 10 V
* Ultra low gate charge ( typical 28 nC )
* Low reverse transfer capacitance ( CRSS = typical 12.0 pF )
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness
„ SYMBOL
Power MOSFET
„ ORDERING INFORMATION
Note:
Ordering Number
Lead Free
Halogen Free
8N60L-TA3-T
8N60G-TA3-T
8N60L-TF1-T
8N60G-TF1-T
8N60L-TF2-T
8N60G-TF2-T
8N60L-TF3-T
8N60G-TF3-T
8N60L-T2Q-T
8N60G-T2Q-T
Pin Assignment: G: Gate D: Drain S: Source
Package
TO-220
TO-220F1
TO-220F2
TO-220F
TO-262
Pin Assignment
123
GDS
GDS
GDS
GDS
GDS
Packing
Tube
Tube
Tube
Tube
Tube
www.unisonic.com.tw
Copyright © 2014 Unisonic Technologies Co., Ltd
1 of 9
QW-R502-115.G




8N60 pdf, 반도체, 판매, 대치품
8N60
Power MOSFET
„ ELECTRICAL CHARACTERISTICS (TC =25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS VGS = 0 V, ID = 250 μA
600
V
Drain-Source Leakage Current
IDSS VDS = 600 V, VGS = 0V
10 µA
Gate-Source Leakage Current
Forward
Reverse
IGSS
VGS = 30 V, VDS = 0V
VGS = -30 V, VDS = 0V
Breakdown Voltage Temperature Coefficient BVDSS/TJ ID=250μA, Referenced to 25°C
100 nA
-100 nA
0.7 V/°C
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-State Resistance
VGS(TH)
RDS(ON)
VDS = VGS, ID = 250μA
VGS = 10V, ID = 4A
2.0 4.0 V
1.0 1.2
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
COSS
CRSS
VDS = 25V, VGS = 0V,
f = 1MHz
965 1255 pF
105 135 pF
12 16 pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
tD(ON)
tR
tD(OFF)
tF
QG
QGS
QGD
VDD = 300V, ID = 8A,
RG = 25(Note 1, 2)
VDS= 480V,ID=8A,
VGS= 10V (Note 1, 2)
16.5 45
60.5 130
81 170
64.5 140
28 36
4.5
12
ns
ns
ns
ns
nC
nC
nC
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Drain-Source Diode Forward Voltage
VSD VGS = 0V, IS = 8A
Maximum Continuous Drain-Source Diode
Forward Current
IS
1.4 V
8A
Maximum Pulsed Drain-Source Diode
Forward Current
ISM
Reverse Recovery Time
Reverse Recovery Charge
trr VGS = 0V, IS = 8A,
QRR dIF/dt = 100 A/µs (Note 2)
Notes: 1. Pulse Test: Pulse width 300μs, Duty cycle2%
2. Essentially independent of operating temperature
32
365
3.4
A
ns
µC
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
4 of 9
QW-R502-115.G

4페이지










8N60 전자부품, 판매, 대치품
8N60
„ TYPICAL CHARACTERISTICS
100
On-State Characteristics
VGS
Top: 15.0V
10.0V
10
8.0V
7.0V
6.5V
6.0V
5.5 V
Bottorm:5.0V
1 5.0V
0.1 Notes:
1. 250µs Pulse Test
2. TC=25°C
0.1 1
10
Drain-to-Source Voltage, VDS (V)
On-Resistance Variation vs. Drain
Current and Gate Voltage
6 TJ=25°C
5
VGS=10V
4
3
2 VGS=20V
1
0
0
5
10 15
20
Drain Current, ID (A)
Capacitance Characteristics
(Non-Repetitive)
1900
1700
1500
1300
Ciss=Cgs+Cgd (Cds=shorted)
Coss=Cds+Cgd Crss=Cgd
Ciss
1100
900
700
Coss
Crss
500
300 Notes:
100
0
1. VGS=0V
2. f = 1MHz
0.1 1
10
Drain-SourceVoltage, VDS (V)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
Power MOSFET
Transfer Characteristics
10
150°C
1
25°C
Notes:
1. VDS=40V
0.1 2. 250µs Pulse Test
2 4 6 8 10
Gate-Source Voltage, VGS (V)
Body Diode Forward Voltage vs. Source
Current
10
150°C
25°C
1
Notes:
1. VGS=0V
0.1 2. 250µs Test
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
Source-Drain Voltage, VSD (V)
Gate Charge Characteristics
12
ID=8A
10 VDS=300V
8 VDS=480V
VDS=120V
6
4
2
0
0 5 10 15 20 25 30
Total Gate Charge, QG (nC)
7 of 9
QW-R502-115.G

7페이지


구       성 총 9 페이지수
다운로드[ 8N60.PDF 데이터시트 ]

당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는

포괄적인 데이터시트를 제공합니다.


구매 문의
일반 IC 문의 : 샘플 및 소량 구매
-----------------------------------------------------------------------

IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한
광범위한 전력 반도체를 판매합니다.

전력 반도체 전문업체

상호 : 아이지 인터내셔날

사이트 방문 :     [ 홈페이지 ]     [ 블로그 1 ]     [ 블로그 2 ]



관련 데이터시트

부품번호상세설명 및 기능제조사
8N60

N-Channel Power MOSFET / Transistor

nELL
nELL
8N60

N-CHANNEL MOSFET

CHONGQING PINGYANG
CHONGQING PINGYANG

DataSheet.kr       |      2020   |     연락처      |     링크모음      |      검색     |      사이트맵