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부품번호 | 8N60 기능 |
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기능 | N-CHANNEL POWER MOSFET | ||
제조업체 | Unisonic Technologies | ||
로고 | |||
전체 9 페이지수
UNISONIC TECHNOLOGIES CO., LTD
8N60
8A, 600V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC 8N60 is a high voltage and high current power
MOSFET, designed to have better characteristics, such as fast
switching time, low gate charge, low on-state resistance and have
a high rugged avalanche characteristics. This power MOSFET is
usually used at high speed switching applications in power
supplies, PWM motor controls, high efficient DC to DC converters
and bridge circuits.
FEATURES
* RDS(ON) < 1.2Ω@VGS = 10 V
* Ultra low gate charge ( typical 28 nC )
* Low reverse transfer capacitance ( CRSS = typical 12.0 pF )
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness
SYMBOL
Power MOSFET
ORDERING INFORMATION
Note:
Ordering Number
Lead Free
Halogen Free
8N60L-TA3-T
8N60G-TA3-T
8N60L-TF1-T
8N60G-TF1-T
8N60L-TF2-T
8N60G-TF2-T
8N60L-TF3-T
8N60G-TF3-T
8N60L-T2Q-T
8N60G-T2Q-T
Pin Assignment: G: Gate D: Drain S: Source
Package
TO-220
TO-220F1
TO-220F2
TO-220F
TO-262
Pin Assignment
123
GDS
GDS
GDS
GDS
GDS
Packing
Tube
Tube
Tube
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www.unisonic.com.tw
Copyright © 2014 Unisonic Technologies Co., Ltd
1 of 9
QW-R502-115.G
8N60
Power MOSFET
ELECTRICAL CHARACTERISTICS (TC =25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS VGS = 0 V, ID = 250 μA
600
V
Drain-Source Leakage Current
IDSS VDS = 600 V, VGS = 0V
10 µA
Gate-Source Leakage Current
Forward
Reverse
IGSS
VGS = 30 V, VDS = 0V
VGS = -30 V, VDS = 0V
Breakdown Voltage Temperature Coefficient △BVDSS/△TJ ID=250μA, Referenced to 25°C
100 nA
-100 nA
0.7 V/°C
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-State Resistance
VGS(TH)
RDS(ON)
VDS = VGS, ID = 250μA
VGS = 10V, ID = 4A
2.0 4.0 V
1.0 1.2 Ω
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
COSS
CRSS
VDS = 25V, VGS = 0V,
f = 1MHz
965 1255 pF
105 135 pF
12 16 pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
tD(ON)
tR
tD(OFF)
tF
QG
QGS
QGD
VDD = 300V, ID = 8A,
RG = 25Ω (Note 1, 2)
VDS= 480V,ID=8A,
VGS= 10V (Note 1, 2)
16.5 45
60.5 130
81 170
64.5 140
28 36
4.5
12
ns
ns
ns
ns
nC
nC
nC
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Drain-Source Diode Forward Voltage
VSD VGS = 0V, IS = 8A
Maximum Continuous Drain-Source Diode
Forward Current
IS
1.4 V
8A
Maximum Pulsed Drain-Source Diode
Forward Current
ISM
Reverse Recovery Time
Reverse Recovery Charge
trr VGS = 0V, IS = 8A,
QRR dIF/dt = 100 A/µs (Note 2)
Notes: 1. Pulse Test: Pulse width ≤300μs, Duty cycle≤2%
2. Essentially independent of operating temperature
32
365
3.4
A
ns
µC
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
4 of 9
QW-R502-115.G
4페이지 8N60
TYPICAL CHARACTERISTICS
100
On-State Characteristics
VGS
Top: 15.0V
10.0V
10
8.0V
7.0V
6.5V
6.0V
5.5 V
Bottorm:5.0V
1 5.0V
0.1 Notes:
1. 250µs Pulse Test
2. TC=25°C
0.1 1
10
Drain-to-Source Voltage, VDS (V)
On-Resistance Variation vs. Drain
Current and Gate Voltage
6 TJ=25°C
5
VGS=10V
4
3
2 VGS=20V
1
0
0
5
10 15
20
Drain Current, ID (A)
Capacitance Characteristics
(Non-Repetitive)
1900
1700
1500
1300
Ciss=Cgs+Cgd (Cds=shorted)
Coss=Cds+Cgd Crss=Cgd
Ciss
1100
900
700
Coss
Crss
500
300 Notes:
100
0
1. VGS=0V
2. f = 1MHz
0.1 1
10
Drain-SourceVoltage, VDS (V)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
Power MOSFET
Transfer Characteristics
10
150°C
1
25°C
Notes:
1. VDS=40V
0.1 2. 250µs Pulse Test
2 4 6 8 10
Gate-Source Voltage, VGS (V)
Body Diode Forward Voltage vs. Source
Current
10
150°C
25°C
1
Notes:
1. VGS=0V
0.1 2. 250µs Test
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
Source-Drain Voltage, VSD (V)
Gate Charge Characteristics
12
ID=8A
10 VDS=300V
8 VDS=480V
VDS=120V
6
4
2
0
0 5 10 15 20 25 30
Total Gate Charge, QG (nC)
7 of 9
QW-R502-115.G
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부품번호 | 상세설명 및 기능 | 제조사 |
8N60 | N-Channel Power MOSFET / Transistor | nELL |
8N60 | N-CHANNEL MOSFET | CHONGQING PINGYANG |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |