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부품번호 | MMBZ10VAL 기능 |
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기능 | Low capacitance unidirectional double ESD protection diodes | ||
제조업체 | NXP Semiconductors | ||
로고 | |||
전체 17 페이지수
MMBZxAL series
Low capacitance unidirectional double ESD protection diodes
Rev. 02 — 10 December 2009
Product data sheet
1. Product profile
1.1 General description
Unidirectional double ElectroStatic Discharge (ESD) protection diodes in a common
anode configuration, encapsulated in a SOT23 (TO-236AB) small Surface-Mounted
Device (SMD) plastic package. The devices are designed for ESD and transient
overvoltage protection of up to two signal lines.
Table 1. Product overview
Type number
Package
NXP
MMBZ5V6AL
SOT23
MMBZ6V2AL
MMBZ6V8AL
MMBZ9V1AL
MMBZ10VAL
MMBZ12VAL
MMBZ15VAL
MMBZ18VAL
MMBZ20VAL
MMBZ27VAL
MMBZ33VAL
JEDEC
TO-236AB
Configuration
dual common anode
1.2 Features
Unidirectional ESD protection of
ESD protection up to 30 kV (contact
two lines
discharge)
Bidirectional ESD protection of one line IEC 61000-4-2; level 4 (ESD)
Low diode capacitance: Cd ≤ 280 pF
Rated peak pulse power: PPPM = 40 W
Ultra low leakage current: IRM = 5 nA
IEC 61643-321
AEC-Q101 qualified
1.3 Applications
Computers and peripherals
Audio and video equipment
Cellular handsets and accessories
Automotive electronic control units
Portable electronics
NXP Semiconductors
MMBZxAL series
Low capacitance unidirectional double ESD protection diodes
5. Limiting values
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Per diode
PPPM
rated peak pulse power
MMBZ5V6AL
tp = 10/1000 μs
[1][2]
-
MMBZ6V2AL
MMBZ6V8AL
MMBZ9V1AL
MMBZ10VAL
MMBZ12VAL
-
MMBZ15VAL
MMBZ18VAL
MMBZ20VAL
MMBZ27VAL
MMBZ33VAL
IPPM
rated peak pulse current
MMBZ5V6AL
tp = 10/1000 μs
[1][2]
-
MMBZ6V2AL
-
MMBZ6V8AL
-
MMBZ9V1AL
-
MMBZ10VAL
-
MMBZ12VAL
-
MMBZ15VAL
-
MMBZ18VAL
-
MMBZ20VAL
-
MMBZ27VAL
-
MMBZ33VAL
-
Per device
Ptot
total power dissipation
Tamb ≤ 25 °C
MMBZxAL series
[3] -
MMBZ5V6AL
[4] -
MMBZ6V2AL
MMBZ6V8AL
MMBZ9V1AL
[4] -
MMBZ10VAL
MMBZ12VAL
MMBZ15VAL
MMBZ18VAL
MMBZ20VAL
MMBZ27VAL
MMBZ33VAL
Max Unit
24 W
40 W
3
2.76
2.5
1.7
1.7
2.35
1.9
1.6
1.4
1
0.87
A
A
A
A
A
A
A
A
A
A
A
265 mW
290 mW
360 mW
MMBZXAL_SER_2
Product data sheet
Rev. 02 — 10 December 2009
© NXP B.V. 2009. All rights reserved.
4 of 17
4페이지 NXP Semiconductors
MMBZxAL series
Low capacitance unidirectional double ESD protection diodes
6. Thermal characteristics
Table 9. Thermal characteristics
Symbol Parameter
Conditions
Per device
Rth(j-a)
thermal resistance from junction in free air
to ambient
MMBZxAL series
MMBZ5V6AL
MMBZ6V2AL
MMBZ6V8AL
MMBZ9V1AL
MMBZ10VAL
MMBZ12VAL
MMBZ15VAL
MMBZ18VAL
MMBZ20VAL
MMBZ27VAL
MMBZ33VAL
Rth(j-sp)
thermal resistance from junction
to solder point
MMBZ5V6AL
MMBZ6V2AL
MMBZ6V8AL
MMBZ9V1AL
MMBZ10VAL
MMBZ12VAL
MMBZ15VAL
MMBZ18VAL
MMBZ20VAL
MMBZ27VAL
MMBZ33VAL
Min Typ Max Unit
[1] - - 460 K/W
[2] - - 420 K/W
[2] - - 340 K/W
[3]
- - 150 K/W
- - 50 K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.
[3] Measured from pin 1 or 2 to pin 3.
MMBZXAL_SER_2
Product data sheet
Rev. 02 — 10 December 2009
© NXP B.V. 2009. All rights reserved.
7 of 17
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